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| Number | Title | Issue Date |
| 7420147 | Microchannel plate and method of manufacturing microchannel plate A method of fabricating a multichannel plate is provided. The method includes providing a N layers, each layer having an array of wells formed therein. The N layers are aligned and stacked. The stack of N layers are sliced along a first and second line of the array ... | 09/02/2008 |
| 7332756 | Damascene gate structure with a resistive device A semiconductor structure having a damascene gate structure and a resistive device on a semiconductor substrate is disclosed. The structure includes a first dielectric layer having a first opening and a second opening formed on the semiconductor substrate, and one o... | 02/19/2008 |
| 6690014 | Microbolometer and method for forming A microbolometer is provided that includes an absorber element having material properties to change temperature in response to absorbing infrared radiation. An amorphous silicon detector is thermally coupled to the absorber element and is suspended above ... | 02/10/2004 |
| 6667182 | Method for making ferroelectric thin-film, sensor and the ferroelectric thin-film element A ferroelectric thin-film element has a Si substrate and a thin-film laminate formed on the Si substrate, the thin-film laminate being a buffer layer epitaxially grown on the Si substrate, a metallic thin film lower electrode epitaxially grown on the buff... | 12/23/2003 |
| 6656029 | Semiconductor device incorporating hemispherical solid immersion lens, apparatus and method for manufacturing the same In a semiconductor device having a front surface where circuits are formed and a back surface, a hemispherical solid immersion lens is formed at the back surface of the semiconductor device in a body with the semiconductor device.... | 12/02/2003 |
| 6627868 | Bi-functional optical detector including four optical detectors used to detect combination of two wavelengths A bi-functional optical detector including a first active photoconduction detection element configured to detect light within first and second wavelength ranges, a first diffraction grating associated with the first detection element and configured to cou... | 09/30/2003 |
| 6627892 | Infrared detector packaged with improved antireflection element An infrared detector has a window in a cover having a cavity for exposing detector pixels to incident radiation. The window has an antireflective element formed within the cavity as a field of posts. The field of post structures is formed in a cavity by e... | 09/30/2003 |
| 6180967 | Bicolor infrared detector with spatial/temporal coherence A dual-band planar infrared detector with space-time coherence, with a stack of semiconductor layers (16, 18, 20, 21) forming first and second photodiodes. The detector has a planar structure in which each layer has a part showing on a surface (22) substa... | 01/30/2001 |
| 6157042 | Optical cavity enhancement infrared photodetector An infrared detector array includes a plurality of detector pixel structures, each of which comprises a plurality of elongate quantum well infrared radiation absorbing photoconductor (QWIP) elements. The group of QWIP elements are spaced such that they co... | 12/05/2000 |
| 6133571 | Resonant cavity field enhancing boundary An electromagnetic sensor includes top and bottom longitudinal contacts on opposite surfaces of an electromagnetic absorbing structure. A grating is provided to diffract the electromagnetic radiation. A reflector operating in conjunction with the grating ... | 10/17/2000 |
| 6046485 | Large area low mass IR pixel having tailored cross section The present invention provides a much more optimum design for an infrared pixel microstructure. The configuration of the microstructure itself is designed to optimum operational characteristics including faster speeds than previously available. These fast... | 04/04/2000 |
| 6005266 | Very low leakage JFET for monolithically integrated arrays A low leakage current monolithic InGaAs InP discrete device is provided for a focal plane array for near-infrared imaging. The array consists of a plurality of InGaAs p-i-n diodes for photodetectors, with each being integrated on a common substrate with a... | 12/21/1999 |
| 5959339 | Simultaneous two-wavelength p-n-p-n Infrared detector An array (41) is comprised of a plurality of radiation detectors (10, 10') each of which includes a first photoresponsive diode (D1) having an anode and a cathode that is coupled to an anode of a second photoresponsive diode (D2). The first photoresponsiv... | 09/28/1999 |
| 5952703 | Semiconductor devices and manufacturing method using II-VI compounds with wide area A semiconductor device having: a support substrate having an upper surface; a HgTe layer formed on the support substrate; and a HgCdTe layer directly formed on the HgTe layer. A semiconductor device of another type having: a support substrate having an ex... | 09/14/1999 |
| 5936268 | Epitaxial passivation of group II-VI infrared photodetectors An array 1 of photodiodes 2 is comprised of a Group II-VI material, such as HgCdTe, which may be selectively doped to form a plurality of diode junctions. Array 1 is comprised of a plurality of photodiodes 2 which are disposed in a regular, two dimensiona... | 08/10/1999 |
| 5804827 | Infrared ray detection device and solid-state imaging apparatus An infrared ray detection device of this invention includes (i) a silicon substrate, (ii) a plurality of light-receiving portions which are disposed at predetermined intervals on one surface of the silicon substrate, and receive infrared rays, (iii) a plu... | 09/08/1998 |
| 5801373 | Solid-state image pickup device having a plurality of photoelectric conversion elements on a common substrate In a solid-state image pickup device this invention, in order to satisfactorily detect optical signals over a wide spectrum range from a visible light range to an invisible light range, a photoelectric conversion element for converting an optical signal i... | 09/01/1998 |
| 5796155 | Schottky barrier infrared detector array with increased effective fill factor An improvement of the design of Schottky barrier infrared detector (SBIR) arrays, as taught by Roosild, et al. We describe modifications of the detector unit cell design which maximize the fraction of detector electrode area exhibiting full spectral emiss... | 08/18/1998 |
| 5747863 | Infrared solid-state image pickup device and infrared solid-state image pickup apparatus equipped with this device The infrared solid-state image pickup device of the present invention comprises a light-receiving portion formed by arranging, on a transparent substrate, light-receiving elements of a plurality of types respectively including optical cavity structures wi... | 05/05/1998 |
| 5726066 | Method for manufacturing an infrared sensor array An infrared sensor array and manufacturing method thereof is disclosed including a substrate; a supporter having a space portion for adiabatic structure between the substrate and supporter; and a plurality of infrared sensors arranged with a predetermined... | 03/10/1998 |
| 5629522 | Apparatus for and method of providing long integration times in an IR detector Apparatus for and method of increasing the effective integration time, and, hence, reducing the noise bandwidth of a photodetector. The current output of the photodetector is converted to a voltage signal in a low pass filter. The low pass filter is prefe... | 05/13/1997 |
| 5602414 | Infrared detector having active regions and isolating regions formed of CdHgTe In a method for fabricating an infrared detector, initially, a CdHgTe layer of a first conductivity type is produced on a front surface of a semiconductor substrate, a plurality of spaced apart CdHgTe regions of a second conductivity type, opposite the fi... | 02/11/1997 |
| 5581084 | Simultaneous two color IR detector having common middle layer metallic contact An array of dual-band HgCdTe radiation detectors (10) wherein individual detectors include a first layer (14) having a first type of electrical conductivity and a bandgap selected for absorbing radiation within a first spectral band. The radiation detecto... | 12/03/1996 |
| 5561295 | Infrared-responsive photoconductive array and method of making A photoconductive detector array which is responsive to infrared light to provide an electrical output response includes a substrate which is transparent to infrared light. A continuous layer of photoconductive material is disposed upon the substrate, and... | 10/01/1996 |
| 5554849 | Micro-bolometric infrared staring array A micro-bolometric infrared (IR) staring array is described. The active element in each pixel within a two-dimensional array is a device having a selectively forward-biased p-n junction, e.g. a selectively biased diode. Each diode in the array serves as b... | 09/10/1996 |
| 5541412 | Two dimensional array infrared ray image pickup device An infrared ray image pickup device has a two-dimensional array structure having a sensor substrate, a plurality of scanning circuits provided to form two dimensional arrays on a surface of the substrate, a layer having a plurality of cavities provided ov... | 07/30/1996 |
| 5523241 | Method of making infrared detector with channel stops Channel stops for MIS infrared photodetector devices in Hg1-x Cdx Te by lattice damage (454) between and automatically aligned to MIS gates (408). Also, field plates and guard rings are automatically aligned to MIS gates.... | 06/04/1996 |
| 5518934 | Method of fabricating multiwavelength infrared focal plane array detector A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of Inx Ga1-x As (xࣘ0.53) absorption layers, between each pair of which a plurality of InAsy | 05/21/1996 |
| 5457331 | Dual-band infrared radiation detector optimized for fabrication in compositionally graded HgCdTe A dual-band HgCdTe radiation detector (10) includes a four layer n-p+ -p-n+ structure, grown by LPE, upon a substrate (12). The four layers are, from a bottom layer next to the substrate to the surface: (a) a MWIR radiation responsiv... | 10/10/1995 |
| 5453611 | Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip In a solid-state image pickup device of this invention, in order to satisfactorily detect optical signals over a wide spectrum range from a visible light range to an invisible light range, a photoelectric conversion element for converting an optical signa... | 09/26/1995 |
| 5432374 | Integrated IR and mm-wave detector An integrated radiation detector (10) includes a substrate (12) having a first region (14) comprised of Group III-V semiconductor material, such as GaAs, formed over a first surface, and a second region (26) comprised of Group II-VI semiconductor material... | 07/11/1995 |
| 5414294 | Remote indium bump corrugated PV diodes A radiation detector includes a photovoltaic diode mesa structure (16) having of a plurality of sub-mesa structures (16a, 16b). Each of said sub-mesa structures includes a first layer (14a) of semiconductor material having a first type of electrical condu... | 05/09/1995 |
| 5410168 | Infrared imaging device An infrared imaging device includes a first conductivity type first semiconductor layer having a small energy band gap, a first conductivity type second semiconductor layer have a larger energy band gap and disposed on the first semiconductor layer, a lig... | 04/25/1995 |
| 5380669 | Method of fabricating a two-color detector using LPE crystal growth Disclosed is a method of fabricating a two-color radiation detector, and two-color photodetectors fabricated by the method. A structure is grown upon a substrate (10) to provide, in sequence, a LPE grown LWIR n-type layer (12), a MWIR p+ type common conta... | 01/10/1995 |
| 5367166 | Infrared detector devices and their manufacture Compact electrical connections (4) are formed on side-walls (1) of an infrared detector element having a step structure (1 to 3) over which a conductive layer (40) is deposited. Using a directional etching treatment, such as ion milling, the conductive la... | 11/22/1994 |
| 5311020 | Monolithically-integrated semiconductor/superconductor infrared detector and readout circuit A monolithically-integrated semiconductor/ superconductor infrared detector and readout circuit providing sensitive, low-noise detection of infrared radiation for high-performance focal plane array applications. The infrared detector and readout circuit i... | 05/10/1994 |
| 5293036 | Radiation detector array having center surround pixel output A backside illuminated array (10) of radiation detectors (12) each of which has an output terminal for expressing a center-surround output signal. The array includes a plurality of the radiation detectors (12) disposed substantially adjacent to a first su... | 03/08/1994 |
| 5285098 | Structure and method internal photoemission detection A method and structure are provided for internal photoemission detection. At least one groove (30a) is formed in a side of a semiconductor layer (32). A silicide film (58) is formed in each groove (30a) over the semiconductor layer (32). A metal contact r... | 02/08/1994 |
| 5276319 | Method and device for improved IR detection with compensations for individual detector response An advanced infrared (IR) Sensor based on the present invention would add the following two elements to a basic staring IR sensor using a 2 dimensional array of detector elements to significantly enhance the detection sensitivity of the device. The added ... | 01/04/1994 |
| 5177580 | Implant guarded mesa having improved detector uniformity A method for fabricating a plurality of semiconductor photodetectors and an array of same produced by the method. The method includes a first step of selectively removing semiconductor material to form a channel within a semiconductor material for physica... | 01/05/1993 |
