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| Number | Title | Issue Date |
| 7442975 | CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same prevent a lifting effect of microlenses. Also, a diffused reflection of microlenses is prevented. The CMOS image sensor includes photodiodes, an interlayer insulating layer, metal lines formed in the interlay... | 10/28/2008 |
| 7442973 | Solid-state imaging device and production method therefor By improving the embedding property of a light-transmissive material constituting a waveguide, light collection efficiency is improved, and reliability of a solid-state imaging device is ensured. In a solid-state imaging device including a light-receiving sec... | 10/28/2008 |
| 7435615 | Method for fabricating CMOS image sensor A method for fabricating a CMOS image sensor improves the characteristics of device by preventing a pad from being contaminated without damaging a micro-lens. The method includes steps of forming a device protection layer on a semiconductor substrate including at le... | 10/14/2008 |
| 7436038 | Visible/near infrared image sensor array A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision... | 10/14/2008 |
| 7432576 | Grid metal design for large density CMOS image sensor A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip periphery. The pixel region contains, an array of image pixels where... | 10/07/2008 |
| 7427530 | Method of manufacturing photo diodes having a conductive plug contact to a buried layer Methods of manufacturing a photo diode include sequentially forming a buried layer of a first conductivity type, a first epitaxial layer of the first conductivity type, and a second epitaxial layer of a second conductivity type on a substrate. The second and first e... | 09/23/2008 |
| 7423302 | Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node contro... | 09/09/2008 |
| 7419844 | Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the s... | 09/02/2008 |
| 7420231 | Solid state imaging pick-up device and method of manufacturing the same A proper incident state can be obtained in each pixel in accordance with a distance between an optical system and a sensor photoreceptive portion, and improved photoreceptive efficiency and even sensitivity of pixels can be attempted. Since a main light beam ... | 09/02/2008 |
| 7420233 | Photodiode for improved transfer gate leakage An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant, wherein at least one of the implants are angled so as to allow the res... | 09/02/2008 |
| 7417273 | Image sensor with embedded photodiode region and fabrication method thereof An image sensor in which a plurality of pixels having at least a photodiode, a reset transistor, and source follower transistor are formed, wherein each pixel comprises an electrical-charge transfer gate transistor between the photodiode and reset transistor, and a ... | 08/26/2008 |
| 7416914 | Method of fabricating CMOS image sensor A method of fabricating a CMOS image sensor is disclosed that enhances device robustness. The method includes the steps of forming a metal pad on a pad area of a substrate, forming a planarizing layer on the substrate including the metal pad, removing a portion of t... | 08/26/2008 |
| 7414276 | Solid-state image pickup device and charge transfer device A solid-state image pickup device includes a semiconductor substrate, a photosensitive pixel which converts incident light on the semiconductor substrate into a signal charge, and a charge detection section which converts the converted signal charge into an output s... | 08/19/2008 |
| 7411229 | Semiconductor device, a manufacturing method thereof, and a camera A semiconductor device includes a transfer channel for transferring charge generated by photoelectric conversion, an insulating film formed on the transfer channel, and a transfer electrode for applying a transfer voltage to the transfer channel via the insulating f... | 08/12/2008 |
| 7405101 | CMOS imager with selectively silicided gate The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned... | 07/29/2008 |
| 7397075 | Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted region... | 07/08/2008 |
| 7397064 | Semiconductor display device To provide a semiconductor display device capable of displaying an image having clarity and a desired color, even when the speed of deterioration of an EL layer is influenced by its environment. Display pixels and sensor pixels of an EL display each have an EL eleme... | 07/08/2008 |
| 7394101 | Semiconductor device In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process an... | 07/01/2008 |
| 7390687 | Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with shaped image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device comprises an imaging die having a substrate, a curved microelectronic image sensor having a face with a convex an... | 06/24/2008 |
| 7384813 | Method for fabricating CMOS image sensor A method for fabricating a CMOS image sensor forms silicon nitride (SiN) layer on a pad. Microlenses, having a minimum height and footprint according to a desired packing density of the lenses, are fabricated of an oxide film and a nitride film deposited on the sili... | 06/10/2008 |
| 7385270 | Semiconductor device and manufacturing method thereof A solid-state imaging device achieving a global shutter of images and its manufacturing method are disclosed. According to one aspect of the present invention, it is provided a solid-state imaging device comprising an optical signal storage region provided in a semi... | 06/10/2008 |
| 7378694 | CMOS image sensor A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrica... | 05/27/2008 |
| 7368770 | Well region with rounded corners A semiconductor imager structure having a well region formed in a substrate layer. The well region being of a predetermined shape having a plurality of corners being non-right angles. ... | 05/06/2008 |
| 7368771 | CMOS image sensor and method of fabricating the same Provided are a complementary metal oxide semiconductor (CMOS) image sensor and a method of fabricating the same, where the CMOS image sensor includes a photodiode, a drive transistor, a reset transistor, and a selection transistor; the drive transistor includes a th... | 05/06/2008 |
| 7368339 | Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted region... | 05/06/2008 |
| 7368773 | Photodetector device, solid-state imaging device, and camera system A photodetector device is provided which comprises a photodiode for generating an electrical signal corresponding to an amount of incident light, and a logarithmic conversion transistor for subjecting a voltage value of the electrical signal to logarithmic conversio... | 05/06/2008 |
| 7364960 | Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 04/29/2008 |
| 7365409 | Two-transistor pixel with buried reset channel and method of formation A two-transistor pixel of an imager has a reset region formed adjacent a charge collection region of a photodiode and in electrical communication with a gate of a source follower transistor. The reset region is connected to one terminal of a capacitor which integrat... | 04/29/2008 |
| 7365380 | Photoelectric conversion device, method for manufacturing the same and image pickup system An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible w... | 04/29/2008 |
| 7358532 | Electro-optical device and electronic apparatus An electro-optical device includes first switching elements which are correspondingly provided at intersections of a plurality of scanning lines and a plurality of data lines in a display region, at least three metal layers which are provided in the display region, ... | 04/15/2008 |
| 7358105 | Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor... | 04/15/2008 |
| 7358529 | Active matrix display devices, and their manufacture Physical barriers (210) are present between neighboring pixels (200) on a circuit substrate (100) of an active-matrix display device, such as an electroluminescent display formed with LEDs (25) of organic semiconductor materials. The inve... | 04/15/2008 |
| 7355228 | Image sensor pixel having photodiode with multi-dopant implantation An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. The N− region is fo... | 04/08/2008 |
| 7355222 | Imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell The invention relates to an imaging device having a pixel cell with a transparent conductive material interconnect line for focusing incident light onto a photosensor and providing an electrical connection to pixel circuitry, and the method of making the same. ... | 04/08/2008 |
| 7354789 | CMOS image sensor and method for fabricating the same CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a tra... | 04/08/2008 |
| 7355227 | Detecting pixel matrix integrated into a charge reader circuit A matrix of detection pixels and a photoelectric detector that includes a matrix of detection pixels and a reading circuit of loads detected by the detection pixels of the matrix. A detection pixel includes a photosensitive semi-conductor area with a first face cove... | 04/08/2008 |
| 7351945 | Alignment among elements in an image sensor An image sensor is formed with shifts among the optical parts of the sensor and the photosensitive parts of the sensor. The optical parts of the sensor may include a color filter array and/or microlenses. The photosensitive part may include any photoreceptors such a... | 04/01/2008 |
| 7352020 | Solid-state image pickup device, and manufacturing method thereof The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for the same. A MOS type imaging apparatus 1 includes an imaging ... | 04/01/2008 |
| 7348614 | Solid-state imaging device, production method and drive method thereof, and camera A solid-state imaging device capable of reducing an eclipse (blocking) of an incident light at a circumferential portion of a light receiving portion and realizing a larger angle of view and high-speed driving. A single-layer transfer electrode configuration of form... | 03/25/2008 |
| 7338832 | CMOS image sensor and method of fabricating the same A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cov... | 03/04/2008 |
