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| Number | Title | Issue Date |
| 7442975 | CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same prevent a lifting effect of microlenses. Also, a diffused reflection of microlenses is prevented. The CMOS image sensor includes photodiodes, an interlayer insulating layer, metal lines formed in the interlay... | 10/28/2008 |
| 7436010 | Solid state imaging apparatus, method for driving the same and camera using the same A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to... | 10/14/2008 |
| 7435968 | Radiation detecting apparatus, radiation imaging apparatus and radiation imaging system A radiation detecting apparatus according to the present invention includes: pixels including switching elements arranged on an insulating substrate and conversion elements arranged on the switching elements to convert a radiation into electric carriers, the switchi... | 10/14/2008 |
| 7432528 | TFD LCD panel Active devices in a thin film diode (TFD) liquid crystal display (LCD) panel used to control liquid crystal are formed by a metal layer, a transparent conductive layer, and an insulating layer sequentially on a substrate, wherein the metal layer is used as transmitt... | 10/07/2008 |
| 7427780 | Semiconductor device and method of fabricating same There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequ... | 09/23/2008 |
| 7427777 | Thin film transistor, pixel structure and repairing method thereof A pixel structure including a scan line, a gate pattern, a first dielectric layer, a channel layer, a source, a drain, a data line, a second dielectric layer and a pixel electrode is provided. The gate pattern is electrically connected with the scan line and has an ... | 09/23/2008 |
| 7425743 | Projection television set Thin-film transistors constituting a liquid crystal module have a channel forming region that is a crystal structural body in which a plurality of rod-like or flat-rod-like crystals are arranged in a particular direction. In the thin-film transistors, deteriorations... | 09/16/2008 |
| 7423291 | Semiconductor device and electronic device A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereb... | 09/09/2008 |
| 7423307 | CMOS image sensor and method for fabricating the same Provided are a CMOS image sensor in which microlenses are formed in a remaining space in a patterned light shielding layer to improve image sensor characteristics and to protect the microlenses during packaging, and a method of fabricating the same. The CMOS image s... | 09/09/2008 |
| 7423306 | CMOS image sensor devices A pixel comprises a substrate comprising a first well region formed in a top portion of the substrate, having a first conductivity type. A plurality of shallow trench isolation (STI) structures is formed in the first well region of the substrate, defining a pixel re... | 09/09/2008 |
| 7420212 | Flat panel display A flat panel display and method for fabricating the same are disclosed. The flat panel display includes a substrate. Signal lines are arranged on the substrate in a matrix shape, and a unit pixel region defined by crossing arrangement of the signal lines, has a pixe... | 09/02/2008 |
| 7388239 | Frame shutter pixel with an isolated storage node A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion. ... | 06/17/2008 |
| 7384846 | Method of fabricating semiconductor device A method of fabricating semiconductor devices. Upon formation of a trench for isolation in a cell region, a hard mask film is used as an etch mask. It is thus possible to prevent attacks of a lower layer due to deformation or loss of the etch mask. ... | 06/10/2008 |
| 7368339 | Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted region... | 05/06/2008 |
| 7361931 | Active matrix electro-luminescent display with an organic leveling layer A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration... | 04/22/2008 |
| 7358532 | Electro-optical device and electronic apparatus An electro-optical device includes first switching elements which are correspondingly provided at intersections of a plurality of scanning lines and a plurality of data lines in a display region, at least three metal layers which are provided in the display region, ... | 04/15/2008 |
| 7352020 | Solid-state image pickup device, and manufacturing method thereof The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for the same. A MOS type imaging apparatus 1 includes an imaging ... | 04/01/2008 |
| 7348613 | CMOS imager with selectively silicided gates The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned... | 03/25/2008 |
| 7348615 | Image pickup device and camera for converting charges into voltage An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels ... | 03/25/2008 |
| 7344930 | Semiconductor device and manufacturing method thereof To obtain a semiconductor device containing TFTs of different, suitable properties as display pixel TFTs and high-voltage, driver-circuit TFTs, the semiconductor device of the present invention includes: first and second islands-shaped polycrystalline silicon (p-Si)... | 03/18/2008 |
| 7312152 | Lactate-containing corrosion inhibitor The corrosion of aluminum-based metal films may be minimized by applying a lactate-containing solution to the aluminum-based metal films before the aluminum-based metal films are etched. The lactate-containing solution is applied to the aluminum-based metal film bef... | 12/25/2007 |
| 7271411 | Light emitting device and manufacturing method of the same The invention provides a downsized structure of a light emitting device, and a light emitting device which has enough reliability as a downsized light emitting device. The light emitting device comprising light emitting elements according to the invention includes a... | 09/18/2007 |
| 7256061 | Array substrate for liquid crystal display device and method of manufacturing the same An array substrate for a liquid crystal display device includes a substrate including a first driving region, a second driving region, and a pixel region, the pixel region including a switching region and a storage region; a first n-type transistor in the first driv... | 08/14/2007 |
| 7253458 | CMOS image sensor A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is d... | 08/07/2007 |
| 7238993 | CMOS pixel with dual gate PMOS A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS t... | 07/03/2007 |
| 7227187 | Semiconductor device and manufacturing method thereof To obtain a semiconductor device containing TFTs of different, suitable properties as display pixel TFTs and high-voltage, driver-circuit TFTs, the semiconductor device of the present invention includes: first and second islands-shaped polycrystalline silicon (p-Si)... | 06/05/2007 |
| 7227208 | Solid-state image pickup apparatus The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode,... | 06/05/2007 |
| 7214575 | Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted region... | 05/08/2007 |
| 7180139 | Pixel structure A pixel structure controlled by a scan line and a data line on a substrate is provided. The pixel structure comprises a thin film transistor, a resistance wire, a first pixel electrode, and a second pixel electrode, which are disposed on the substrate. Additionally,... | 02/20/2007 |
| 7139028 | Image pickup apparatus There is provided an image pickup apparatus in which a plurality of pixel areas in which pixels each having a photoelectric conversion unit are arranged two-dimensionally, are arranged on a single semiconductor chip to be adjacent to each other through a predetermin... | 11/21/2006 |
| 7129532 | Image sensor and method for fabricating the same The present invention relates to an image sensor with a microlens and a method for fabricating the same with use of a bump formation process. A method for fabricating an image sensor includes the steps of: forming a passivation layer on a substrate structure provide... | 10/31/2006 |
| 7109537 | CMOS pixel with dual gate PMOS A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS t... | 09/19/2006 |
| 6703256 | Solid-state image sensor and method of fabricating the same There is provided a solid-state image sensor including a first region in which light is converted into electricity, and a second region composed of silicide. The second region at least partially forms a boarder area of the first region at a surface of the... | 03/09/2004 |
| 6703653 | Image sensor having photodiode on substrate The present invention relates to a photodiode of an image sensor. Particularly, the photodiode is formed on a substrate so that an occupying area of a unit pixel of the image sensor is reduced. To achieve this effect, there is provided an image sensor com... | 03/09/2004 |
| 6696314 | CMOS imager and method of formation A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial ... | 02/24/2004 |
| 6692984 | Method of manufacturing a semiconductor device The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning ... | 02/17/2004 |
| 6690076 | Stitched circuits larger than the maximum reticle size in sub-micron process A circuit having a plurality of circuit blocks formed on a semiconductor substrate is disclosed. The circuit blocks are stitched together by appropriately connecting input and output lines of the plurality of circuit blocks. The circuit also includes conn... | 02/10/2004 |
| 6677627 | Solid state imaging device, method of manufacturing the same, and solid state imaging system A solid state imaging device includes a MOS image sensor of a threshold voltage modulation system employed in a video camera, an electronic camera, an image input camera, a scanner, a facsimile, or the like. The solid state imaging device includes a photo... | 01/13/2004 |
| 6670990 | Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element an... | 12/30/2003 |
| 6667768 | Photodiode-type pixel for global electronic shutter and reduced lag Operation for global electronic shutter photodiode-type pixels. In a first mode of operation, lag is reduced through global reset of the photodiode array and fixed pattern noise is eliminated through comparison of the photosignal level and the reset level... | 12/23/2003 |
