A beach chair which can be adapted for a woman who is pregnant and wishes to sunbathe in the prone position.
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| Number | Title | Issue Date |
| 7439540 | Organic electroluminescent display An invention relates to an organic electroluminescent display. The organic electroluminescent display comprises a substrate, a bonding pad, and an FPC (Flexible Print Circuit). The substrate comprises a luminescent surface and a non-luminescent surface. An organic e... | 10/21/2008 |
| 7439086 | Method for manufacturing liquid crystal display device A conventionally followed technique of manufacturing a liquid crystal display device is a method for forming various types of coatings over an entire surface of a substrate and for removing the coatings with a small region left by etching, which requires wasting a m... | 10/21/2008 |
| 7436011 | CMOS image sensor A CMOS image sensor includes a semiconductor substrate; a pinned photodiode formed in a light-sensing region of the semiconductor substrate, the pinned photodiode comprising a charge-accumulating diffusion region and a surface pinning diffusion region overlying the ... | 10/14/2008 |
| 7432528 | TFD LCD panel Active devices in a thin film diode (TFD) liquid crystal display (LCD) panel used to control liquid crystal are formed by a metal layer, a transparent conductive layer, and an insulating layer sequentially on a substrate, wherein the metal layer is used as transmitt... | 10/07/2008 |
| 7427780 | Semiconductor device and method of fabricating same There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequ... | 09/23/2008 |
| 7425743 | Projection television set Thin-film transistors constituting a liquid crystal module have a channel forming region that is a crystal structural body in which a plurality of rod-like or flat-rod-like crystals are arranged in a particular direction. In the thin-film transistors, deteriorations... | 09/16/2008 |
| 7423306 | CMOS image sensor devices A pixel comprises a substrate comprising a first well region formed in a top portion of the substrate, having a first conductivity type. A plurality of shallow trench isolation (STI) structures is formed in the first well region of the substrate, defining a pixel re... | 09/09/2008 |
| 7423291 | Semiconductor device and electronic device A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereb... | 09/09/2008 |
| 7411216 | Thin film array panel and manufacturing method thereof A thin film array panel is provided, which includes: a plurality of signal lines including contact parts for contact with an external device; a plurality of thin film transistors connected to the signal lines; an insulating layer formed on the signal lines and the t... | 08/12/2008 |
| 7405427 | Liquid crystal display and panel therefor A thin film transistor array panel according to an embodiment of the present invention includes: a gate line; a data line intersecting the gate line; a thin film transistor connected to the gate line and the data line; a pixel electrode connected to the thin film tr... | 07/29/2008 |
| 7387908 | CMOS imager with enhanced transfer of charge and low voltage operation and method of formation A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a... | 06/17/2008 |
| 7388241 | Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect t... | 06/17/2008 |
| 7388225 | Electro-optical device, method of manufacturing the same, and electronic apparatus Exemplary embodiments of the present invention include an electro-optical device including storage capacitors having excellent breakdown-voltage performance to function properly. Exemplary embodiments further include an electro-optical device including data lines, s... | 06/17/2008 |
| 7378697 | Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect t... | 05/27/2008 |
| 7378696 | Pinned photodiode structure and method of formation An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect t... | 05/27/2008 |
| 7369168 | Circuit for an active pixel sensor A pixel circuit includes a silicon substrate having a photodiode that converts light intensity into a voltage signal and two metal layers disposed on the substrate having a pixel control circuit. The first metal layer includes a row trace and a reset trace and the s... | 05/06/2008 |
| 7358530 | Thin-film transistor array with ring geometry An improved transistor array for a display or sensor device is described. The display or sensor device includes a plurality of pixels. Each pixel includes a width and a length. Each pixel is addressed by a transistor. The transistor addressing each pixel has a chann... | 04/15/2008 |
| 7344930 | Semiconductor device and manufacturing method thereof To obtain a semiconductor device containing TFTs of different, suitable properties as display pixel TFTs and high-voltage, driver-circuit TFTs, the semiconductor device of the present invention includes: first and second islands-shaped polycrystalline silicon (p-Si)... | 03/18/2008 |
| 7342249 | Organic electroluminescent device and fabricating method thereof An organic electroluminescent device, includes: a first substrate including a first pixel region, the first pixel region including first, second and third sub-pixel regions; an array element layer on an inner surface of the first substrate, the array element layer i... | 03/11/2008 |
| 7339192 | Function line and transistor array using the same An active-matrix substrate 30 includes multiple function lines 31, a structure for fixing up the arrangement of the function lines, a first conductive layer 43, a second conductive layer 42, multiple transistors 32 and multiple pix... | 03/04/2008 |
| 7332743 | Thin film transistor array panel and liquid crystal display A thin film transistor array panel is provided, which includes an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer covering the gate line, a data line formed on the gate insulating layer, a lower passivation layer coverin... | 02/19/2008 |
| 7330234 | Semiconductor device A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, ... | 02/12/2008 |
| 7317205 | Light emitting device and method of manufacturing a semiconductor device Semiconductor layers for serving as active layers of a plurality of thin film transistors in a pixel are arranged in the same direction and irradiated with laser light with the scanning direction matched to the channel length direction of the semiconductor layers. I... | 01/08/2008 |
| 7317208 | Semiconductor device with contact structure and manufacturing method thereof A plurality of gate lines are formed on a substrate. After depositing a gate insulating layer, a semiconductor layer and a doped amorphous silicon layer are sequentially formed thereon. A lower insulating layer made of silicon nitride and an upper insulating layer m... | 01/08/2008 |
| 7312111 | Liquid crystal display panel An LCD panel includes a plurality of gate lines and gate electrodes formed on a substrate and a gate insulating film formed on the substrate including the gate lines and the gate electrodes. A semiconductor film is formed in a region on the gate insulating film and ... | 12/25/2007 |
| 7312152 | Lactate-containing corrosion inhibitor The corrosion of aluminum-based metal films may be minimized by applying a lactate-containing solution to the aluminum-based metal films before the aluminum-based metal films are etched. The lactate-containing solution is applied to the aluminum-based metal film bef... | 12/25/2007 |
| 7304383 | TFT substrate for liquid crystal display apparatus and method of manufacturing the same There are provided a TFT substrate for an LCD apparatus and a method of manufacturing the same. A substrate (10), a diffusion barrier layer (11) and a copper alloy layer (12) are formed on the TFT substrate, consecutively. The copper alloy inclu... | 12/04/2007 |
| 7279714 | Flat panel display device A flat panel display device has a transistor in which cross-talk is minimized. The flat panel display device includes a substrate, a first gate electrode formed on the substrate, a first electrode insulated from the first gate electrode, a second electrode insulated... | 10/09/2007 |
| 7265432 | Solid state imaging device and method of fabricating the same A method for fabricating a solid state imaging device comprising photoelectric conversion sections and charge transfer sections having single-layered charge transfer electrodes for transferring charges generated in the photoelectric conversion sections, the method i... | 09/04/2007 |
| 7259035 | Methods of forming thin-film transistor display devices Methods of forming thin-film transistor display devices including forming a gate line and a gate electrode on a face of a substrate and forming a semiconductor layer that is insulated from the gate line. A data line and a source/drain electrode are formed on the sem... | 08/21/2007 |
| 7238993 | CMOS pixel with dual gate PMOS A pixel circuit with a dual gate PMOS is formed by forming two P+ regions in an N− well. The N− well is in a P− type substrate. The two P+ regions form the source and drain of a PMOS transistor. The PMOS t... | 07/03/2007 |
| 7233021 | Active matrix substrate, electromagnetic detector, and liquid crystal display apparatus An electromagnetic detector includes an insulating substrate, whereon a charge storage capacitor, a charge collection electrode connected to the charge storage capacitor, and a semiconductor film having electromagnetic conductivity are laminated in this order. The c... | 06/19/2007 |
| 7227187 | Semiconductor device and manufacturing method thereof To obtain a semiconductor device containing TFTs of different, suitable properties as display pixel TFTs and high-voltage, driver-circuit TFTs, the semiconductor device of the present invention includes: first and second islands-shaped polycrystalline silicon (p-Si)... | 06/05/2007 |
| 7227208 | Solid-state image pickup apparatus The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode,... | 06/05/2007 |
| 7223996 | Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS cir... | 05/29/2007 |
| 7223997 | Thin film transistor array panel A thin film array panel is provided, which includes: a gate line formed on a substrate; a first insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a data line formed on the gate insulating layer and intersecting the ... | 05/29/2007 |
| 7196353 | Electro-optical device and electronic apparatus Aspects of the invention can provide an electro-optical device that displays an image in good quality by an electro-optical device, such as a liquid crystal device, even in the proximity of edges of the image displayed. The electro-optical device can include a plura... | 03/27/2007 |
| 7196352 | Pixel structure, and thin film transistor A method of fabricating a pixel structure is disclosed. A substrate having a color filter layer thereon and a leveling layer further covers the color filter layer is provided. A first metal layer is formed over the leveling layer. The first metal layer is patterned ... | 03/27/2007 |
| 7180139 | Pixel structure A pixel structure controlled by a scan line and a data line on a substrate is provided. The pixel structure comprises a thin film transistor, a resistance wire, a first pixel electrode, and a second pixel electrode, which are disposed on the substrate. Additionally,... | 02/20/2007 |
| 7164447 | Solid state image pickup device A solid state image pickup device is provided which can reduce crosstalks between range finding photoelectric conversion elements (AF sensor) and photometry photoelectric conversion elements (AE sensor). The solid state image pickup device has an n-type epitaxial se... | 01/16/2007 |