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| Number | Title | Issue Date |
| 7307327 | Reduced crosstalk CMOS image sensors CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate, an epitaxial layer above the substrate, and a plurality of pixels ext... | 12/11/2007 |
| 6670258 | Fabrication of low leakage-current backside illuminated photodiodes Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been g... | 12/30/2003 |
| 6664527 | Photoelectric converter and X-ray image pick-up device According to the present invention, a photoelectric converter comprises a plurality of substrates, which are located adjacent to each other and on which a plurality of photoelectric conversion devices are two-dimensionally arranged, either scan circuits o... | 12/16/2003 |
| 6633716 | Optical device and method therefor A photedetector uses a semiconductor on insulator (SOI) substrate having an optical grating over the silicon semiconductor to change the direction of incident light to divert it into the silicon which functions as waveguide. The underlying insulator opera... | 10/14/2003 |
| 6627865 | Nonplanar integrated optical device array structure and a method for its fabrication An integrated optical device array structure has a plurality of interconnected solid state microelectronic optical device elements associated together on a substrate structure. The optical device elements may be optical detectors or optical emitters. Each... | 09/30/2003 |
| 6451702 | Methods for forming lateral trench optical detectors A method for forming an optical detector device on a semiconductor substrate. The method includes forming a first set and a second set of trenches in the substrate, wherein trenches of the first set are alternately disposed with respect to trenches of the... | 09/17/2002 |
| 6372531 | Semiconductor device and fabrication process therefor A plurality of photo diodes PD1 to PD4 are formed on a p-type silicon substrate. The photo diodes PD1 to PD4 are electrically isolated from one another by lower and upper isolation regions 3 and 5. Arms of strip portions of each of the lower and upper iso... | 04/16/2002 |
| 6297493 | Photoelectric converter with a plurality of photoelectric conversion layers deposited in a predetermined orientation relative to one another A photoelectric converter includes a plurality of substrates, which are located adjacent to each other and on which a plurality of photoelectric conversion devices are two-dimensionally arranged, either scan circuits or detection circuits, at least, that ... | 10/02/2001 |
| 6204087 | Fabrication of three-dimensional architecture for solid state radiation detectors A radiation-damage resistant radiation detector with preferably three dimensional collection electrodes may be formed on a substrate that is a semiconductor or an insulator, and may be operated in avalanche mode to increase detection output. A detector co... | 03/20/2001 |
| 6180990 | Hyperspectral radiation detector A hyperspectral radiation detector system collects infrared radiation concurrently from a plurality of adjacent infrared spectral bands. A collector system includes an optical train for receiving the incoming radiation, a disperser for separating the rece... | 01/30/2001 |
| 6136627 | High-resolution light-sensing and light-emitting diode array and fabrication method thereof A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 μm but not more than 2 μm in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or ... | 10/24/2000 |
| 6049074 | Photoelectric conversion device In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a ther... | 04/11/2000 |
| 5914485 | Photoelectric converter having respective circuits provided on opposite sides thereof capable of scanning in like directions According to the present invention, a photoelectric converter comprises a plurality of substrates, which are located adjacent to each other and on which a plurality of photoelectric conversion devices are two-dimensionally arranged, either scan circuits o... | 06/22/1999 |
| 5912465 | Photoelectric converter According to the present invention, provided is a photoelectric converter wherein mounted on substrate are a photoelectric conversion device array portion, which is so formed as to contact two adjacent sides, and a driving circuit portion, which is formed... | 06/15/1999 |
| 5858810 | Photo sensor and method for forming the same A semiconductor photosensitive element comprises first and second photosensitive regions. The first photosensitive region is different from the second photosensitive region in its structure and thereby the first photosensitive region has photoelectric con... | 01/12/1999 |
| 5834822 | Image sensor An image sensor includes a substrate on which a light-receiving element and a thin-film transistor for transferring an output from the light-receiving element are formed, and a silicon integrated circuit chip for driving the thin-film transistor and proce... | 11/10/1998 |
| 5828068 | Uncooled mercury cadmium telluride infrared devices with integral optical elements This is an uncooled HgCdTe IR sensor, and method of fabricating an uncooled HgCdTe IR sensor. The method comprises; growing an HgCdTe film on an IR transparent substrate, and shaping the substrate into a lens configuration. The HgCdTe IR sensor can compri... | 10/27/1998 |
| 5825071 | Photosensitive element having two regions with superior frequency characteristics and conversion characteristics respectively A semiconductor photosensitive element comprises first and second photosensitive regions. The first photosensitive region is different from the second photosensitive region in its structure and thereby the first photosensitive region has photoelectric con... | 10/20/1998 |
| 5821567 | High-resolution light-sensing and light-emitting diode array A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 μm but not more than 2 μm in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or ... | 10/13/1998 |
| 5811790 | Photoelectric conversion device having thermal conductive member In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a ther... | 09/22/1998 |
| 5780914 | Contact image sensor whose sensory elements have identical output levels A contact image sensor whose sensory elements have similar output levels is disclosed. The sensor includes: a first region consisting of a plurality of light sensory elements situated on a silicon wafer, the light sensory elements being separated from one... | 07/14/1998 |
| 5672902 | Image sensor An image sensor includes a substrate on which are formed a light-receiving element and a thin-film transistor for transferring an output from the light-receiving element, and a silicon integrated circuit chip for driving the thin-film transistor and proce... | 09/30/1997 |
| 5633526 | Photodiode array and method for manufacturing the same A photodiode array includes an insulating film; a semiconductor layer of a first conductivity type provided on the insulating film; a positive electrode and negative electrode formed on the semiconductor layer; and a plurality of pn junctions formed in se... | 05/27/1997 |
| 5629517 | Sensor element array having overlapping detection zones An image sensor array has overlapping responsive zones for detecting incident radiation. The sensor array includes a plurality of collection electrodes for sensing charge and a charge distribution layer in contact with the collection electrodes. The charg... | 05/13/1997 |
| 5621227 | Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy A monolithic Optoelectronic Integrated Circuit including a photodiode and a CMOS readout circuit is described in which the diode is formed by compositionally graded layers of Inx Ga1-x As selectively epitaxially grown between a subst... | 04/15/1997 |
| 5610094 | Photoelectric conversion device A photoelectric conversion device of the type having a photosensor region and a circuit section for processing at least an output signal from the photosensor region, wherein on a first layer formed with an electronic element constituting the circuit secti... | 03/11/1997 |
| 5587611 | Coplanar X-ray photodiode assemblies A coplanar photodiode construction is disclosed having particular utility in X-ray detection applications in which alternating P-doped and N-doped regions, separated by undoped material, are located in relatively shallow depth under and along the surface ... | 12/24/1996 |
| 5576537 | Photoelectric position measuring system using gratings having specified dimensions to suppress harmonics A light source which emits light in strips is provided for illuminating a scale of a photoelectric position measuring system. The light modulated by the scale is converted into a sinusoidal scanning signal by a scanning plate. The scanning plate is a semi... | 11/19/1996 |
| 5572014 | Highly efficient, ultrafast optical-to-electrical converter and method of operating the same The periodic array of photodiodes are disposed in a passive optical waveguide electrically coupled in series with each other by microwave transmission line. The collective array of photodiodes coupled to the optical waveguide and microwave transmission li... | 11/05/1996 |
| 5567249 | Photoelectric conversion device A plurality of first electrodes are sequentially arranged on a substrate and covered with a non-single-crystal semiconductor laminate member. On the semiconductor laminate member are formed second electrodes respectively corresponding to the first electro... | 10/22/1996 |
| 5567974 | Semiconductor device to absorb stray carriers A photo IC having a plurality of photodiodes is disclosed. A semiconductor region to absorb stray carriers is provided between the photodiodes. Stray carriers generated by incidence of light are absorbed by the semiconductor region. As a result, crosstalk... | 10/22/1996 |
| 5563429 | Solid state imaging device An amplification-type solid state imaging device includes a plurality of photoelectric conversion devices each adapted to receive incident light to produce a signal charge and a plurality of signal reading devices to read a signal charge produced from one... | 10/08/1996 |
| 5557120 | Wafer joined optoelectronic integrated circuits A full wafer to full wafer integrated circuit apparatus wherein substrate removal and replacement on one wafer has been used to enable an accurate alignment of this wafer with features of a receiving wafer during a see through alignment step. The inventio... | 09/17/1996 |
| 5536964 | Combined thin film pinhole and semiconductor photodetectors A thin-film semiconductor pinhole component with monolithically integrated position-sensing photodetectors is herein referred to as a Position Sensitive Pinhole (PSP). Another embodiment is also discussed where a PSP is integrated onto a platform with con... | 07/16/1996 |
| 5523610 | Photodiode array and method for manufacturing the same A photodiode array is provided which includes a cell comprised of at least a substrate, an insulating film formed on the substrate, a semiconductor layer containing an impurity of first conductivity type and provided on the insulating film, an impurity-di... | 06/04/1996 |
| 5500051 | Photoelectric conversion device A plurality of first electrodes are sequentially arranged on a substrate and covered with a non-single-crystal semiconductor laminate member. On the semiconductor laminate member are formed second electrodes respectively corresponding to the first electro... | 03/19/1996 |
| 5479015 | Multi-image detector assembly A multi-image detector assembly has an array of detector elements formed upon a single focal plane and a plurality of focusing members, each focusing member focusing a substantially identical scene upon a corresponding one of a plurality of sections of th... | 12/26/1995 |
| 5472914 | Wafer joined optoelectronic integrated circuits and method A full wafer to full wafer integrated circuit fabrication process wherein substrate removal and replacement of one wafer is used to enable an accurate alignment of this wafer with features of a receiving wafer during a see through alignment step. The inve... | 12/05/1995 |
| 5444234 | Position transmitter for acquiring the position of a light beam A position transmitter for acquiring the position of a light beam has at least one group of photodiodes arranged neighboring one another and fashioned strip-shaped such that at least two, typically 5-10, strip-shaped electrodes of a photodiode structure a... | 08/22/1995 |
| 5404006 | High power capacity optical receiver apparatus and method employing distributed photodetectors An optical receiver with an enhanced power capability and wide bandwidth is implemented by distributing a number of photodetectors along an optical transmission channel to convert respective portions of an optical signal into electrical signals. An electr... | 04/04/1995 |
