Did You Know...
...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Number | Title | Issue Date |
| 7422918 | Method of making a support for light emitting diodes which are interconnected in a three-dimensional environment The present invention relates to a method of making supports for light emitting diodes, wherein rigid substrates are used as supports for light emitting diodes, it being proposed, in particular, to render the substrates more fragile in order to make certain zones of... | 09/09/2008 |
| 7397092 | Phase changable memory device structures A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole... | 07/08/2008 |
| 7248310 | Flat panel energized by blue LED for generating white light A color, transmissive LCD uses a backlight that supplies a uniform blue light to the back of the liquid crystal layer in an LCD. The blue light, after being modulated by the liquid crystal layer, is then incident on the back surface of phosphor material located abov... | 07/24/2007 |
| 7242024 | Light emitting device A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a ca... | 07/10/2007 |
| 7148514 | Nitride semiconductor light emitting diode and fabrication method thereof The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent sub... | 12/12/2006 |
| 7135383 | Composite structure with high heat dissipation A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered s... | 11/14/2006 |
| 6703644 | Method for producing a semiconductor configuration In a method for producing a semiconductor configuration that includes at least two semiconductor elements, at least two differently doped surface regions are embodied on the top side of a semiconductor substrate. After that, an active layer structure incl... | 03/09/2004 |
| 6693033 | Method of removing an amorphous oxide from a monocrystalline surface A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxid... | 02/17/2004 |
| 6692984 | Method of manufacturing a semiconductor device The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning ... | 02/17/2004 |
| 6682207 | Green phosphor converted light emitting diode A light emitting device comprises a light emitting diode that emits primary light and a SrGa2 S4 :Eu2+ phosphor material capable of absorbing at least a portion of the primary light and emitting secondary light. The second... | 01/27/2004 |
| 6680495 | Silicon wafer with embedded optoelectronic material for monolithic OEIC A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is... | 01/20/2004 |
| 6677655 | Silicon wafer with embedded optoelectronic material for monolithic OEIC A structure with an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is... | 01/13/2004 |
| 6677610 | Light-emitting device and display apparatus using the same A light-emitting device and a display apparatus using the light-emitting device. The light-emitting device includes a p-type or n-type substrate, at least one doped region formed on at least one surface of the substrate while being doped with a predetermi... | 01/13/2004 |
| 6667496 | Optical semiconductor apparatus, and its fabrication method The optical semiconductor apparatus is provided with a surface light-emitting device and a surface light-receiving device, and includes an active layer, a first spacer layer, and a first semiconductor multi-layer mirror. The active layer, the first spacer... | 12/23/2003 |
| 6657222 | Photon source A photon source, comprising a first semiconductor region having excess carriers with a first conductivity type, and a second semiconductor region having excess carriers with a second conductivity type, the first and second conductivity types being opposin... | 12/02/2003 |
| 6653662 | Semiconductor light-emitting device, method for fabricating the same, and method for driving the same The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type fo... | 11/25/2003 |
| 6646289 | Integrated circuit device An integrally packaged optronic integrated circuit device (310) including an integrated circuit die (322) containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mechan... | 11/11/2003 |
| 6645829 | Silicon wafer with embedded optoelectronic material for monolithic OEIC A structure and method of fabricating an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the op... | 11/11/2003 |
| 6624505 | Packaged integrated circuits and methods of producing thereof This invention discloses a packaged integrated circuit including an integrated circuit substrate lying in a substrate plane and having electrical circuitry formed thereon, a package enclosing the integrated circuit substrate and defining first and second ... | 09/23/2003 |
| 6614086 | Avalanche photodetector There is disclosed a photodetector having two or more avalanche-gain layered structures and multi-terminals. The avalanche photodetector includes an emitter light absorption layer structure located between a collector layer and an emitter layer (top conta... | 09/02/2003 |
| 6593597 | Group III-V element-based LED having ESD protection capacity A group III-V element-based flip-chip assembled light-emitting diode structure with electrostatic protection capacity. A first conductive buffer layer and a second conductive buffer layer are formed over a transparent substrate. An active layer structure,... | 07/15/2003 |
| 6593194 | Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate, and method of making the same A method for making a metal-insulator-semiconductor field effect transistor (MISFET) having an oxidized aluminum nitride gate insulator formed on a silicon or gallium nitride substrate. The method of making the MISFET comprises the steps of depositing an ... | 07/15/2003 |
| 6577073 | Led lamp An LED lamp includes blue and red LEDs and a phosphor. The blue LED produces an emission at a wavelength falling within a blue wavelength range. The red LED produces an emission at a wavelength falling within a red wavelength range. The phosphor is photoe... | 06/10/2003 |
| 6498356 | LED chip, LED array chip, LED array head and image-forming apparatus There is disclosed an LED array chip which can minimize LED optical property deterioration by addition of a surface protective film, and mainly side effects such as light quantity decrease and light quantity dispersion increase among light emitting bits. ... | 12/24/2002 |
| 6483862 | System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer A light emitting device and photodetector combination having a structure in which the layer of the photodetector that contacts the light emitting device is separated from the light emitting device by a native semiconductor oxide layer that is both insulat... | 11/19/2002 |
| 6477285 | Integrated circuits with optical signal propagation An integrated circuit is presented in which optical signal propagation replaces or supplements conventional electrical signal propagation. Optical lasers, waveguides, beam splitters, and photodetectors are fabricated on top of or below conventional electr... | 11/05/2002 |
| 6472718 | Semiconductor device A semiconductor device includes an electrically conductive III-V doped semiconductor substrate of a first conduction type, a photodiode array having photodiode structures disposed on the III-V doped semiconductor substrate, a first III-V doped semiconduct... | 10/29/2002 |
| 6465270 | Process for producing a semiconductor device A semiconductor device includes an electrically conductive III-V doped semiconductor substrate of a first conduction type, a photodiode array having photodiode structures disposed on the III-V doped semiconductor substrate, a first III-V doped semiconduct... | 10/15/2002 |
| 6410941 | Reconfigurable systems using hybrid integrated circuits with optical ports A hybrid integrated circuit is provided that has a monocrystalline substrate such as silicon and a compound semiconductor layer such as gallium arsenide or indium phosphide. An optical communications port may be formed on the hybrid integrated circuit. El... | 06/25/2002 |
| 6403986 | Optical semiconductor device and method of fabricating the same An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor ele... | 06/11/2002 |
| 6392257 | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apar... | 05/21/2002 |
| 6355945 | Semiconductor optical device and optoelectronic integrated circuit device including a ZnO buffer layer A semiconductor optical device includes a GaAs substrate, a light-emitting/light-receiving layer including a GaN-based compound semiconductor, and a ZnO film formed between the GaAs substrate and the light-emitting/light receiving layer.... | 03/12/2002 |
| 6350996 | Light emitting diode device A light emitting diode device includes a light emitting diode and a non-linear element which are arranged on a substrate. The non-linear element is composed of an organic compound layer.... | 02/26/2002 |
| 6339233 | Metal clad ridge waveguide ("MCRW") laser semiconductor structure with doped semiconductor substrate A semiconductor device comprises an electrically conductive III-V semiconductor substrate which has mutually opposite first and second main surfaces. At least one pn junction, reverse biased during operation of the semiconductor device, is disposed above ... | 01/15/2002 |
| 6297538 | Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate A method for making a metal-insulator-semiconductor field effect transistor (MISFET) having an oxidized aluminum nitride gate insulator formed on a silicon or gallium nitride or other substrate. The method of making the MISFET comprises the steps of depos... | 10/02/2001 |
| 6273589 | Solid state illumination source utilizing dichroic reflectors A light source having emissions in a plurality of spectral bands. The simplest light source according to the present invention is constructed from first and second light sources and a dichroic beam splitter. The first and second solid state light sources ... | 08/14/2001 |
| 6261859 | Method for fabricating surface-emitting semiconductor device, surface-emitting semiconductor device fabricated by the method, and display device using the device A surface-emitting semiconductor device is fabricated by a method comprising the steps of epitaxially growing, on a first substrate comprising a semiconductor, semiconductor layers having a semiconductor active layer capable of emitting light upon feed of... | 07/17/2001 |
| 6232724 | Light emitting diode array An LED array composed of a plurality of LEDs is disposed on either side of a signal interconnection board, while metal plates are disposed on the other side of the signal interconnection board as positive and negative power source lines for driving the LE... | 05/15/2001 |
| 6185240 | Semiconductor laser having electro-static discharge protection A vertical cavity surface emitting laser (103) and a diode (105) is provided. The diode (105) is electrically coupled in reverse parallel to the vertical cavity surface emitting laser (103), thereby providing a portion of protection against electro-static... | 02/06/2001 |
| 6157047 | Light emitting semiconductor device using nanocrystals A device structure provides improved efficiency of light emission from a light emitting element made of silicon while rendering such emission electrically controllable. Silicon in the light emitting element comprises fine microcrystals, which are miniatur... | 12/05/2000 |
