Bizarre Patents
Combination Beverage Container and Spittoon
A combination beverage container and spittoon includes a bottom portion including outer wall and a first inner wall defining a spittoon space.
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| Number | Title | Issue Date |
| 7442595 | Bipolar transistor with collector having an epitaxial Si:C region A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter t... | 10/28/2008 |
| 7371650 | Method for producing a transistor structure A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and... | 05/13/2008 |
| RE40222 | Electronic semiconductor power device with integrated diode A device including an IGBT a formed on a chip of silicon consisting of a P type substrate with an N type epitaxial layer that contains a first P type region and a termination structure, and having a first P type termination region that surrounds the first region, a ... | 04/08/2008 |
| 7342294 | SOI bipolar transistors with reduced self heating A bipolar transistor includes a collector located over a substrate; and a heat conductive path connecting the substrate to the collector. The heat conductive path is filled with a heat conductive material such as metal or polysilicon. In one embodiment the heat cond... | 03/11/2008 |
| 7329940 | Semiconductor structure and method of manufacture A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness, different from the first thickness. A method is also contemplated which in... | 02/12/2008 |
| 7268412 | Double polysilicon bipolar transistor A bipolar transistor with a substrate having a collector region and a base structure provided thereon. An emitter structure is formed over the base structure and an extrinsic base structure is formed over the base structure and over the collector region beside and s... | 09/11/2007 |
| 7265434 | Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each o... | 09/04/2007 |
| 7164186 | Structure of semiconductor device with sinker contact region A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the burie... | 01/16/2007 |
| 7075156 | Collector structure for electrostatic discharge protection circuits Electrostatic discharge (ESD) devices for protection of integrated circuits are described. ESD devices may be configured to provide uniform breakdown of finger regions extending through a first region of a substrate having a first conductivity type and into a second... | 07/11/2006 |
| 6664574 | Heterojunction semiconductor device and method of manufacturing A semiconductor component (100) includes a semiconductor substrate (16) that is formed with trench (27). A semiconductor layer (20) is formed in the trench for coupling a control signal (VB) through a sidewall (25) of the trench to route a curr... | 12/16/2003 |
| 6657279 | PNP lateral bipolar electronic device and corresponding manufacturing process The invention relates to a process for making a lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other bipolar devices of the NPN type, said device being incorporated to an electrically insulated m... | 12/02/2003 |
| 6638807 | Technique for gated lateral bipolar transistors An improved structure and method for gated lateral bipolar transistors are provided. Embodiments of the present invention capitalize on opposing sidewalls and adjacent conductive sidewall members to conserve available surface space on the semiconductor ch... | 10/28/2003 |
| 6627925 | Transistor having a novel layout and an emitter having more than one feed point A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the first feed point and the second feed point. A base terminal, a... | 09/30/2003 |
| 6605870 | Pressure-contact type semiconductor device A pressure-contact type semiconductor device comprises a plurality of semiconductor elements (IGBTs) which are in pressure contact with one another, and in which first main electrodes are electrically connected to a first common main power source plate (p... | 08/12/2003 |
| 6600211 | Bipolar transistor constructions The invention includes a bipolar transistor construction having a collector region, emitter region, and base region extending within a semiconductive material substrate. The construction further comprises separate access regions associated with the base r... | 07/29/2003 |
| 6586782 | Transistor layout having a heat dissipative emitter Various embodiments of a novel transistor layout having improved electrical and heat dissipation characteristics are disclosed. Several embodiments include various intrinsic components contoured to the shape of the emitter. The various intrinsic component... | 07/01/2003 |
| 6524921 | Methods of forming bipolar transistor constructions The invention includes a bipolar transistor construction having a collector region, emitter region, and base region extending within a semiconductive material substrate. The construction further comprises separate access regions associated with the base r... | 02/25/2003 |
| 6507089 | Semiconductor device, semiconductor integrated circuit, and method for manufacturing semiconductor device A semiconductor device is provided with a plurality of hetero junction bipolar transistors arranged in a specified direction. Also, the semiconductor device comprises emitter wiring connected to each emitter of the plural hetero junction bipolar transisto... | 01/14/2003 |
| 6489665 | Lateral bipolar transistor A substantially concentric lateral bipolar transistor and the method of forming same. A base region is disposed about a periphery of an emitter region, and a collector region is disposed about a periphery of the base region to form the concentric lateral ... | 12/03/2002 |
| 6376898 | Bipolar transistor layout with minimized area and improved heat dissipation An inventive semiconductor integrated circuit device includes multiple transistor banks over a substrate. The banks are arranged to be substantially parallel to each other in a planar layout of the device. Each said bank includes a plurality of unit trans... | 04/23/2002 |
| 6344775 | Semiconductor device A semiconductor device is provided having a high-frequency amplifying bipolar transistor (10) with its emitter electrode grounded. A current mirror circuit including a bipolar transistor (20) supplies the transistor (10) with a base potential as bias volt... | 02/05/2002 |
| 6337503 | Integrated power circuit with reduced parasitic current flow Presented is an integrated circuit structure having a power transistor in a first well and control circuitry in another well. Between the power and control regions is an intermediate region including a biaging circuit secured to prevent flow of parasitic ... | 01/08/2002 |
| 6307235 | Another technique for gated lateral bipolar transistors An improved structure and method for gated lateral bipolar transistors are provided. Embodiments of the present invention capitalize on opposing sidewalls and adjacent conductive sidewall members to conserve available surface space on the semiconductor ch... | 10/23/2001 |
| 6236071 | Transistor having a novel layout and an emitter having more than one feed point A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the first feed point and the second feed point. A base terminal, a... | 05/22/2001 |
| 6218722 | Antifuse based on silicided polysilicon bipolar transistor An improved antifuse which employs the base-emitter junction of a silicided single polysilicon bipolar transistor. The distance between the base metal and emitter metal is shortened and results from self aligning process steps rather than lithographic ste... | 04/17/2001 |
| 6166426 | Lateral bipolar transistors and systems using such A substantially concentric lateral bipolar transistor and the method of forming same. A base region is disposed about a periphery of an emitter region, and a collector region is disposed about a periphery of the base region to form the concentric lateral ... | 12/26/2000 |
| 6146956 | PNP lateral bipolar electronic device and corresponding manufacturing process The invention relates to a process for making a lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other bipolar devices of the NPN type, said device being incorporated to an electrically insulated m... | 11/14/2000 |
| 6144252 | High power heterojunction bipolar transistor A plurality of heterojunction bipolar transistors (HBTs), each including one or more HBT cells, are combined so as to drive all of the cells equally and involves coupling the input drive signal via a pair of microstrip transmission lines to the two farthe... | 11/07/2000 |
| 6140690 | Semiconductor device Two bipolar transistors formed on a common semiconductor substrate are separated by a separation band. The separation band includes a first separation portion having the same conductivity type, and substantially the same impurity concentration and diffusi... | 10/31/2000 |
| 6127236 | Method of forming a lateral bipolar transistor A substantially concentric lateral bipolar transistor and the method of forming same. A base region is disposed about a periphery of an emitter region, and a collector region is disposed about a periphery of the base region to form the concentric lateral ... | 10/03/2000 |
| 5973513 | Integrated circuit arrangement with an open-collector transistor designed as npn transistor In an integrated circuit arrangement with an open-collector transistor of the npn type, the collector of the open-collector transistor is connected through a collector resistor with preferably low ohmic resistance to an open-collector output of the circui... | 10/26/1999 |
| 5945726 | Lateral bipolar transistor A substantially concentric lateral bipolar transistor having a base region that is disposed about a periphery of an emitter region, and a collector region that is disposed about a periphery of the base region to form the concentric lateral bipolar transis... | 08/31/1999 |
| 5920771 | Method of making antifuse based on silicided single polysilicon bipolar transistor An improved antifuse which employs the base-emitter junction of a silicided single polysilicon bipolar transistor. The distance between the base metal and emitter metal is shortened and results from self aligning process steps rather than lithographic ste... | 07/06/1999 |
| 5895964 | Thermoelectric cooling system A circuit element is produced in a circuit, and a thermoelectric cooling element comprising two dissimilar metals is thermally coupled to the circuit element for cooling the circuit element. A source is provided for applying a driving current to the circu... | 04/20/1999 |
| 5773873 | Semiconductor device having multi-emitter structure A semiconductor device having a differential amplifier circuit portion made of two multi-emitter bipolar transistors (BPT). Each multi-emitter BPT has the same number of a plurality of transistor elements each having an independent emitter electrode. Each... | 06/30/1998 |
| 5614422 | Process for doping two levels of a double poly bipolar transistor after formation of second poly layer A reduced mask set, implant complexity process for manufacturing a (high frequency application) complementary bipolar transistor structure uses the fast lateral diffusion characteristic of a layer of material, that is at least an order of magnitude higher... | 03/25/1997 |
| 5561073 | Method of fabricating an isolation trench for analog bipolar devices in harsh environments The present invention teaches a method of making an isolation trench. First, a silicon on insulator ("SOI") structure is provided having a conductive layer superjacent the insulator of the SOI. Second, a trench is formed down to the insulator of the SOI, ... | 10/01/1996 |
| 5525533 | Method of making a low voltage coefficient capacitor The present invention teaches a low voltage coefficient MOS capacitor, and a method of making such a capacitor, having substantially uniform parasitic effects over an operating voltage range and a low voltage coefficient. The capacitor comprises a first c... | 06/11/1996 |
| 5523613 | Band gap reference power supply device A semiconductor device implemented using a transistor (Q1) including at least one emitter (E1) and a transistor (Q2) which is larger than the transistor (Q1) including n emitters (E21 to E2n) each having the same area as the emitter (E1) of the transistor... | 06/04/1996 |
| 5373185 | Multilayer vertical transistor having an overlay electrode connected to the top layer of the transistor and to the transistor substrate A vertical type construction transistor of this invention includes: a semiconductor substrate; a semiconductor multilayer formed on the semiconductor substrate, the semiconductor multilayer including at least an emitter layer, a collector layer, and a bas... | 12/13/1994 |
