Class 257/E27.04 - With Schottky diode only (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E27.048. This
No. of patents: 47
Last issue date: 10/14/2008

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Number	Title	Issue Date
7436039	Gallium nitride semiconductor device A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN laye...	10/14/2008
7385271	Chemical sensor using chemically induced electron-hole production at a schottky barrier Electro-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential fo...	06/10/2008
7279390	Schottky diode and method of manufacture A Schottky diode capable of sustaining a breakdown voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer disposed on a semiconductor substrate has a thickness of at least about 15 micrometers and an impurity concentration rangi...	10/09/2007
7276771	Diode and method for manufacturing the same A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed ...	10/02/2007
7189610	Semiconductor diode and method therefor In one embodiment, a diode is formed with anodes on two surfaces of a semiconductor substrate. ...	03/13/2007
7161227	Structure and method for fabricating semiconductor structures and devices for detecting an object High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of mono...	01/09/2007
7115992	Electrode structure for use in an integrated circuit An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion of the surface of the first layer. A binding layer is formed on the d...	10/03/2006
6573582	Semiconductor device A bipolar transistor is formed on a semiconductor substrate. A Schottky diode is formed in the collector region of the bipolar transistor. The collector region and the semiconductor substrate are isolated in potential from each other by potential isolatin...	06/03/2003
6261932	Method of fabricating Schottky diode and related structure A method of forming an improved Schottky diode structure as part of an integrated circuit fabrication process that includes the introduction of a selectable concentration of dopant into the surface of an epitaxial layer so as to form a barrier-modifying s...	07/17/2001
5536966	Retrograde NWell cathode Schottky transistor and fabrication process An improved Schottky transistor structure (6), including a bipolar transistor structure (7) and a Schottky diode structure (8), is formed by retrograde diffusing relatively fast diffusing atoms to form a localized retrograde diode well (9) as the substrat...	07/16/1996
5298437	Fabrication process for Schottky barrier diodes on a single poly bipolar process A method for fabricating a diode, for example, for use in a Schottky clamped transistor, which as a process step disposes a layer of oxide between the substrate and the overlying layer of polysilicon which must ultimately be etched away. The oxide layer p...	03/29/1994
5212102	Method of making polysilicon Schottky clamped transistor and vertical fuse devices An improved method for fabricating polysilicon Schottky clamped transistors and vertical fuse devices in the same semiconductor structure is disclosed. The resulting structure yields an improved Schottky clamped transistor and vertical fuse device. The im...	05/18/1993
5166094	Method of fabricating a base-coupled transistor logic A base-coupled logic gate is characterized by input Schottky diodes that are directly formed on the base region of the switching transistor for the gate. A logic of this type provides flexible circuit arrangements and savings in required area, while achie...	11/24/1992
5144404	Polysilicon Schottky clamped transistor and vertical fuse devices An improved method for fabricating polysilicon Schottky clamped transistors and vertical fuse devices in the same semiconductor structure is disclosed. The resulting structure yields an improved Schottky clamped transistor and vertical fuse device. The im...	09/01/1992
5140383	Method for fabricating a buried Schottky logic array and apparatus produced thereby A Schottky diode includes a metal layer (62) on an epitaxial region (24). The metal layer (62) is covered with a dielectric layer (64). An area (90) on the metal is exposed by opening a via (68) in the dielectric. The exposed area (90) is spaced from a bu...	08/18/1992
4982244	Buried Schottky clamped transistor A buried Schottky clamped transistor is described in which the Schottky diode comprises a region of metal silicide 24 in the epitaxial layer 15 adjacent the transistor. The structure includes an electrically isolated region of N type epitaxial silicon 15 ...	01/01/1991
4967243	Power transistor structure with high speed integral antiparallel Schottky diode A power semiconductor device which comprises either a bipolar transistor or a MOSFET, incorporates an integral Schottky diode in antiparallel connection with the transistor for conducting reverse current through the power semiconductor device. By fabricat...	10/30/1990
4947230	Base-coupled transistor logic A base-coupled logic gate is characterized by input Schottky diodes that are directly formed on the base region of the switching transistor for the gate. A logic of this type provides flexible circuit arrangements and savings in a required area, while ach...	08/07/1990
4871686	Integrated Schottky diode and transistor An improved means and method is described for forming a Schottky diode integrated with transistors and other devices which is particularly useful where both control circuits and a large power device are on the same chip. Nested N-, P-, N- and P+ regions are fo...	10/03/1989
4860065	Semiconductor integrated circuit device According to the present invention, an IC device includes an input PNP transistor, a first NPN transistor, a second NPN transistor and an SBD; and the device is characterized in that an isolation layer (16) is provided between the input PNP transistor (1)...	08/22/1989
4835580	Schottky barrier diode and method The preferred embodiments include Schottky barrier diode (80) clmaped bipolar transistors for use in planar integrated circuits with the diode (80) being formed in a trench to increase junction area, reduce series resistance from junction to the buried la...	05/30/1989
4783693	Driver element for inductive loads This driver element for inductive loads, specifically DC motors, step motors, solenoids, and the like comprises a transistor bridge, each transistor of the bridge being parallel connected to a respective flyback diode ensuring recirculation of the current...	11/08/1988
4629912	Schottky shunt integrated injection An improved integrated injection logic structure utilizes a current mirror in conjunction with each switching transistor (M1, M2) of the integrated injection logic circuit of this invention by connecting one of a plurality of collect...	12/16/1986
4525922	Method of producing a semiconductor device A method of producing a semiconductor device, including a bipolar transistor and a Schottky barrier diode (e.g., an SBD transistor), includes the steps of selectively etching an insulating layer formed on an N-type silicon epitaxial layer so as to form an...	07/02/1985
4443808	Semiconductor device A semiconductor device having a high breakdown voltage transistor and a Schottky barrier diode. The Schottky barrier diode is formed in a surface portion of a semiconductor layer adjacent to the base region of the transistor, and a well layer of the same ...	04/17/1984
4380021	Semiconductor integrated circuit A semiconductor integrated circuit with a short turn-off time in which a high breakdown voltage semiconductor element and a Schottky barrier diode are fabricated into a semiconductor substrate, is disclosed. In the integrated circuit, within a semiconduct...	04/12/1983
4282538	Method of integrating semiconductor components A dielectric-isolated PNP transistor with Schottky protection, either alone or as one of an integrated pair of complementary bipolar transistors has complete dielectric isolation from neighboring devices and from the substrate by means of a topside anisot...	08/04/1981
4276556	Semiconductor device A semiconductor device including a diode and a bipolar transistor which are connected to each other and formed in an isolated area of a semiconductor layer has a diffused region formed between a base region of the bipolar transistor and a formation region...	06/30/1981
4260431	Method of making Schottky barrier diode by ion implantation and impurity diffusion A Schottky barrier diode is formed in a low impurity concentration N-type substrate by ion implanting N-type impurities to form a deep region having increased impurity surface concentration of at least 1016 carriers per cubic centimeters, formi...	04/07/1981
4253034	Integratable semi-conductor memory cell An integratable semi-conductor memory cell has two bipolar transistors which are identical to one another and which have their collectors connected in series with respective circuit parts having a non-linear current characteristic, the respective circuit ...	02/24/1981
4243435	Bipolar transistor fabrication process with an ion implanted emitter A very high current ion implanted emitter is formed in a diffused base. Windows are made through the silicon nitride and silicon dioxide layes to both the base contact and the emitter regions using a resist mask. These regions are then protected by resist...	01/06/1981
4214315	Method for fabricating vertical NPN and PNP structures and the resulting product A method is given for fabricating vertical NPN and PNP structures on the same semiconductor body. The method involves providing a monocrystalline semiconductor substrate having regions of monocrystalline silicon isolated from one another by isolation regi...	07/22/1980
4199860	Method of integrating semiconductor components A dielectric-isolated PNP transistor with Schottky protection, either alone or as one of an integrated pair of complementary bipolar transistors has complete dielectric isolation from neighboring devices and from the substrate by means of a topside anisot...	04/29/1980
4183036	Schottky-transistor-logic A Schottky-transistor-logic arrangement is disclosed which comprises a highly doped semiconductor substrate of one conductivity type. An epitaxial layer of the same conductivity type is formed on the substrate. A deep-implanted doped zone of the other con...	01/08/1980
4178603	Schottky transistor with low residual voltage A planar transistor has its base-collector-pn-junction bridged with a Schottky diode, wherein the degree of coupling of the Schottky diode is modified by means of a semiconducting layer with non-homogenous doping....	12/11/1979
4165470	Logic gates with forward biased diode load impedences A logic family is provided capable of accomplishing a logic function for each transistor used, i.e., one transistor per logic gate. A plurality of logic gate types are shown, each capable of a different logic function. Nonlinear loads are used in the logi...	08/21/1979
4127860	Integrated circuit mesa bipolar device on insulating substrate incorporating Schottky barrier contact A PNP bipolar transistor is protected by a Schottky barrier, in which an N- base of the device forms a Schottky diode with a metallizing which is used as the collector. No separate P- semiconductor region is provided as the collector. Such transistors may...	11/28/1978
4112314	Logical current switch A logical current switch responsive to a plurality of input logical signals having predetermined voltage swings and including in a first circuit arrangement parallel-connected bipolar transistors responsive to the logical signal levels of the input signal...	09/05/1978
4079408	Semiconductor structure with annular collector/subcollector region Disclosed is a semiconductor structure with an annular collector/subcollector region. The base area with the emitter, is positioned over the collector/subcollector region only, resulting in a smaller base to collector capacitance. Packing density is impro...	03/14/1978
4038680	Semiconductor integrated circuit device A semiconductor integrated circuit device having a construction of complementary PNP-NPN semiconductor devices in a monolithic integrated form. First and second N type epitaxial layers are formed on a common P type semiconductor substrate. A base region o...	07/26/1977

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Class 257/E27.04 - With Schottky diode only (EPO)