Did You Know...
...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 7338875 | Method of fabricating a semiconductor device having a toroidal-like junction Formation of elements of a vertical bipolar transistor is described, in particular a vertical npn transistor formed on a p-type substrate. Accordingly, an improved method not limited by constraints of photolithography, and an ensuing device made by such methods, is ... | 03/04/2008 |
| 7217613 | Low cost fabrication of high resistivity resistors In one disclosed embodiment a layer is formed over a transistor gate and a field oxide region. For example, a polycrystalline silicon layer can be deposited over a PFET gate oxide and a silicon dioxide isolation region on the same chip. The layer is then doped over ... | 05/15/2007 |
| 7183612 | Semiconductor device having an electrostatic discharge protecting element In an ESD protecting element, a plurality of source regions and a plurality of ballast resistor regions are formed. A drain region is formed at a region which is in contact with a channel region in the ballast resistor region, and an n+ type diffusion reg... | 02/27/2007 |
| 6377115 | Integrated potentiometer and corresponding fabrication process A process and an integrated circuit are intended for obtaining an adjustable electrical resistance, in which a first voltage is applied to an integrated MOS transistor on its source, its gate and its substrate, and a second voltage is applied on its drain... | 04/23/2002 |
| 6137140 | Integrated SCR-LDMOS power device An integrated SCR-LDMOS device (10) having a p+ region (13) in the drain region (12), but otherwise similar to a conventional LDMOS transistor. The device (10) may be implemented as a modification of a non-planar LDMOS (FIGS. 1 and 2). An alternate embodi... | 10/24/2000 |
| 5854100 | Method of forming a new bipolar/CMOS pixel for high resolution imagers An active pixel sensor cell that will convert a quantum of light energy to an electronic signal representing the amplitude of the quantum of light energy is disclosed. The active pixel sensor cell is immune to image blooming and has a reset operation to r... | 12/29/1998 |
| 4999518 | MOS switching circuit having gate enhanced lateral bipolar transistor Circuitry for implementing a gate enhanced lateral transistor to provide a circuit having a bipolar current driving capability and an FET channel voltage drop. The circuits provide switching of the lateral transistor by enabling both gate and base connect... | 03/12/1991 |
| 4920399 | Conductance-modulated integrated transistor structure Disclosed is an integrated transistor structure having increased conductance and operating speed including a complementary insulated gate field-effect transistor pair, each including a source and drain region with a gate contact positioned therebetween, a... | 04/24/1990 |
| 4868135 | Method for manufacturing a Bi-CMOS device A method for fabricating a Bi-CMOS device is disclosed herein, which device can include both vertical PNP and NPN components. The process steps include forming the reach-through N+ subcollector to the bipolar device without extra processing steps; combini... | 09/19/1989 |
| 4847671 | Monolithically integrated insulated gate semiconductor device A monolithically integrated semiconductor device preferably comprising a thyristor driven transistor is disclosed. The thyristor provides a base drive sufficient to fully turn-on an inherent bipolar transistor and achieve the maximum benefit of bipolar co... | 07/11/1989 |
| 4458408 | Method for making a light-activated line-operable zero-crossing switch A monolithic light-activated line-operable zero-crossing switch and method of making the same. The device comprises anti-parallel thyristors, each of whose gates is shunted by a field effect transistor. Each device may also be shunted by a resistor to red... | 07/10/1984 |
| 4429326 | I2 L Memory with nonvolatile storage An I2 L type nonvolatile memory of this invention has a structure wherein a floating gate is disposed through an insulating film on the surface of a semiconductor layer in the vicinity of a base region of an NPN transistor in an I2 L... | 01/31/1984 |
| 4396932 | Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other A monolithic light-activated line-operable zero-crossing switch and method of making the same. The device comprises anti-parallel thyristors, each of whose gates is shunted by a field effect transistor. Each device may also be shunted by a resistor to red... | 08/02/1983 |
| 4150392 | Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors A semiconductor integrated circuit comprises a pair of load transistors and a pair of inverter transistors to constitute a flip-flop circuit. The load transistors are formed of p-channel field effect transistors serving as carrier injectors for the invert... | 04/17/1979 |
| 3986177 | Semiconductor store element and stores formed by matrices of such elements A novel semiconductor store element comprises a bistable pnpn structure of the kind described in the copending Patent application Ser. No. 527,918, addressed by a structure of the same type. The system has an area of the order of 10 to 20 square microns a... | 10/12/1976 |
