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Thomas Edison ; 1889
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| Number | Title | Issue Date |
| 7271070 | Method for producing transistors The invention relates to a method for producing integrable semiconductor components, especially transistors or logic gates, using a p-doped semiconductor substrate. First of all, a mask is applied to the semiconductor substrate in order to define a window that is de... | 09/18/2007 |
| 4626710 | Low power logic circuit with storage charge control for fast switching A bipolar logic circuit with superior speed/power characteristics is described. Circuit operation is based on a unique dynamic minority carrier charge exchange mechanism between the input diodes performing the logic and the oppositely poled level shift di... | 12/02/1986 |
| 4100565 | Monolithic resistor for compensating beta of a lateral transistor A monolithic semiconductor device including a resistor comprising a first region of one type conductivity, has means for controllably establishing the value of the resistor comprising two additional regions of the opposite type conductivity disposed respe... | 07/11/1978 |
| 4057894 | Controllably valued resistor A monolithic semiconductor device including a resistor comprising a first region of one type conductivity, has means for controllably establishing the value of the resistor comprising two additional regions of the opposite type conductivity disposed respe... | 11/15/1977 |
