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| Number | Title | Issue Date |
| 7436045 | Gallium nitride-based semiconductor device A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the... | 10/14/2008 |
| 7427804 | Optoelectronic semiconductor device and light signal input/output device A optoelectronic semiconductor device, mountable on and electrically connectable to an electro-optical wiring board, a substrate thereof having a light input/output through-hole and electric connection through-holes, the light input/output through-hole being not for... | 09/23/2008 |
| 7417270 | Distributed high voltage JFET A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average do... | 08/26/2008 |
| 7015519 | Structures and methods for fabricating vertically integrated HBT/FET device Methods and systems for fabricating integrated pairs of HBT/FET's are disclosed. One preferred embodiment comprises a method of fabricating an integrated pair of GaAs-based HBT and FET. The method comprises the steps of: growing a first set of epitaxial layers for f... | 03/21/2006 |
| 6703284 | Methods for fabricating a compound semiconductor protection device for low voltage and high speed data lines The invention relates to the protection of devices in a monolithic chip fabricated from an epitaxial wafer, such as a wafer for a Group III-V compound semiconductor or a wafer for a Group IV compound semiconductor. Devices fabricated from Group III-V comp... | 03/09/2004 |
| 6703701 | Semiconductor device with integrated circuit elements of group III-V comprising means for preventing pollution by hydrogen A semiconductor device comprising integrated circuit elements realized by means of a stack of layers of semiconductor materials provided on a substrate of semiconductor material and comprising means for preventing the pollution of the circuit elements and... | 03/09/2004 |
| 6703638 | Enhancement and depletion-mode phemt device having two ingap etch-stop layers A depletion/enhancement PHEMT device structure is provided. The structure comprises: (a) a semiconductor substrate; (b) a buffer region comprising one or more semiconductor buffer layers over the substrate; (c) a III-V semiconductor channel layer over the... | 03/09/2004 |
| 6696711 | Semiconductor device and power amplifier using the same A semiconductor device comprising a plurality of heterojunction bipolar transistors with their base layer made of GaAsSb or InGaAs, a GaAs substrate, and a buffer layer placed between the base layer and the substrate is fabricated. The substrate and the b... | 02/24/2004 |
| 6693033 | Method of removing an amorphous oxide from a monocrystalline surface A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxid... | 02/17/2004 |
| 6689677 | CMOS circuit of GaAs/Ge on Si substrate A GaAs/Ge on Si CMOS integrated circuit is formed to improve transistor switching (propagation) delay by taking advantage of the high electron mobility for GaAs in the N-channel device and the high hole mobility for Ge in the P-channel device. A semi-insu... | 02/10/2004 |
| 6683334 | Compound semiconductor protection device for low voltage and high speed data lines The invention relates to the protection of devices in a monolithic chip fabricated from an epitaxial wafer, such as a wafer for a Group III-V compound semiconductor or a wafer for a Group IV compound semiconductor. Devices fabricated from Group III-V comp... | 01/27/2004 |
| 6673667 | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials A method for manufacturing a monolithic apparatus including a plurality of materials presenting a plurality of coplanar lands includes the steps of: (a) providing a substrate constructed of a first material and presenting a first land; (b) trenching the s... | 01/06/2004 |
| 6670652 | Monolithically integrated E/D mode HEMT and method for fabricating the same The monolithically integrated Enhancement/Depletion mode HEMT (high-electron-mobility transistor) of the present invention comprises: a buffer layer, a channel layer, a spacer layer, a first barrier layer, a second barrier layer, a third barrier layer, an... | 12/30/2003 |
| 6657266 | Semiconductor switching device A switching circuit device has a first FET and a second FET, and operates with single control terminal. The device also has a common input terminal connected to the drain or source electrode of the two FETs, a first output terminal and a second output ter... | 12/02/2003 |
| 6654604 | Equipment for communication system Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided up... | 11/25/2003 |
| 6653668 | Radio frequency modules and modules for moving target detection It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effe... | 11/25/2003 |
| 6642099 | Method of manufacturing compound semiconductor device There is provided a compound semiconductor device having a capacitor, to prevent a leakage current flowing between an upper electrode and a lower electrode of the capacitor via an insulating protective film. The compound semiconductor device comprises a f... | 11/04/2003 |
| 6639257 | Hetero-junction bipolar transistor having a dummy electrode A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a s... | 10/28/2003 |
| 6638872 | Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a la... | 10/28/2003 |
| 6627956 | Semiconductor switching device A semiconductor switching device of mirror logic includes two FETs having a gate width of 600 μm, a common input terminal, two control terminal and two output terminals. The resistors connecting the control terminals and the gate electrodes of FETs are p... | 09/30/2003 |
| 6627924 | Memory system capable of operating at high temperatures and method for fabricating the same A memory system having a plurality of T-RAM cells arranged in an array is presented where each T-RAM cell has dual vertical devices and is fabricated over a SiC substrate. Each T-RAM cell has a vertical thyristor and a vertical transfer gate. The top surf... | 09/30/2003 |
| 6580107 | Compound semiconductor device with depletion layer stop region The conventional compound semiconductor switching device is prone to have a large chip size as the gate width needs to be large for achieving a low insertion loss and the separation between the connecting pad and the circuit wiring needs to be larger than... | 06/17/2003 |
| 6573540 | Semiconductor device and method for fabricating the same A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a s... | 06/03/2003 |
| 6573529 | Semiconductor switching device A semiconductor switching device includes two FETs with different device characteristics, a common input terminal, and two output terminals. A signal transmitting FET has a gate width of 500 μm and a signal receiving FET has a gate width of 400 μm. A re... | 06/03/2003 |
| 6563143 | CMOS circuit of GaAs/Ge on Si substrate A GaAs/Ge on Si CMOS integrated circuit is formed to improve transistor switching (propagation) delay by taking advantage of the high electron mobility for GaAs in the N-channel device and the high hole mobility for Ge in the P-channel device. A semi-insu... | 05/13/2003 |
| 6559513 | Field-plate MESFET A planar MESFET transistor includes a plurality of FET elements. Each FET element includes a doped planar channel, and source and drain coupled to the ends of the channel. A gate conductor extends over a portion of the channel at a location lying between ... | 05/06/2003 |
| 6531351 | Method for forming a CMOS circuit of GaAS/Ge on Si substrate A GaAs/Ge on Si CMOS integrated circuit is formed to improve transistor switching (propagation) delay by taking advantage of the high electron mobility for GaAs in the N-channel device and the high hole mobility for Ge in the P-channel device. A semi-insu... | 03/11/2003 |
| 6525388 | Compound semiconductor device having diode connected between emitter and collector of bipolar transistor A heterojunction bipolartansistor is fabricated on a semi-insulating substrate, and has a mesa structure, wherein an emitter signal line of titanium-platinum-gold alloy is held in contact with the collector layer as well as the emitter layer for forming a... | 02/25/2003 |
| 6525346 | Semiconductor device and its manufacturing method capable of reducing low frequency noise In a semiconductor device, a first semiconductor layer is formed on a semiconductor substrate. A second semiconductor layer is formed on a part of the first semiconductor layer, and a third semiconductor layer is formed on a part of the second semiconduct... | 02/25/2003 |
| 6479844 | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit A family of high speed transistors and optoelectronic devices is obtained on a monolithic substrate with an epitaxial layer structure comprised of two modulation doped transistor structures, one inverted with respect to the other. The transistor structure... | 11/12/2002 |
| 6479843 | Single supply HFET with temperature compensation A method of fabricating apparatus, and the apparatus, for providing low voltage temperature compensation in a single power supply HFET including a stack of epitaxially grown compound semiconductor layers with an HFET formed in the stack. A Schottky diode ... | 11/12/2002 |
| 6469326 | Radio frequency modules and modules for moving target detection It is an object of the present invention to provide a radio frequency module incorporating an MMIC that has a high S/N ratio while ensuring a high output. A radio frequency module according to the present invention incorporates an MMIC having a field effe... | 10/22/2002 |
| 6465289 | Method of fabricating monolithic multifunction integrated circuit devices A method of selective molecular beam epitaxy for fabricating monolithically integrated circuit devices on a common substrate including combinations of PIN diode devices, HBT devices, HEMT devices and MESFET devices. The method includes depositing a profil... | 10/15/2002 |
| 6462360 | Integrated gallium arsenide communications systems Composite semiconductor structures and methods are provided for communications systems, specifically, those utilizing RF signals. Antenna switches, and amplifiers in receiver and transmitter sections of the communications systems are shown that are fabric... | 10/08/2002 |
| 6455398 | Silicon on III-V semiconductor bonding for monolithic optoelectronic integration In a method for bonding a silicon substrate to a III-V material substrate, a silicon substrate is contacted together with a III-V material substrate and the contacted substrates are annealed at a first temperature that is above ambient temperature, e.g., ... | 09/24/2002 |
| 6424006 | Semiconductor component A semiconductor component, such as a high-frequency integrated circuit, includes a semiconductor substrate with one or more transistors formed thereon. First, second and third electrode terminals are respectively associated with the gate or base terminal,... | 07/23/2002 |
| 6403991 | Semiconductor device and method for fabricating the same A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a s... | 06/11/2002 |
| 6404004 | Compound semiconductor device and method of manufacturing the same There is provided a compound semiconductor device having a capacitor, to prevent a leakage current flowing between an upper electrode and a lower electrode of the capacitor via an insulating protective film. The compound semiconductor device comprises a f... | 06/11/2002 |
| 6392257 | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apar... | 05/21/2002 |
| 6255710 | 3-D smart power IC An integrated smart power circuit including a power semiconductor device fabricated on a conducting substrate with a source positioned adjacent the upper surface of the substrate, a control terminal between the upper and lower surfaces, and a drain positi... | 07/03/2001 |
