Class 257/E21.704 - Substrate is nonsemiconductor body, e.g., insulating body (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.702. This subclass
No. of patents: 137
Last issue date: 10/28/2008

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Number	Title	Issue Date
7442585	MOSFET with laterally graded channel region and method for manufacturing same The present invention relates generally to a semiconductor device having a channel region comprising a semiconductor alloy of a first semiconductor material and a second, different material, and wherein atomic distribution of the second material in the channel regio...	10/28/2008
7419878	Planarized and silicided trench contact Power MOSFETs and fabrication processes for power MOSFETs use a continuous conductive gate structure within trenches to avoid problems arising from device topology caused when a gate bus extends above a substrate surface. The gate bus trench and/or gate structures i...	09/02/2008
7410913	Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include ...	08/12/2008
7411250	Radiation-hardened silicon-on-insulator CMOS device, and method of making the same A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type impurity implanted within the ultrathin silicon layer and the sapphire...	08/12/2008
7410841	Building fully-depleted and partially-depleted transistors on same chip A method (10) of forming fully-depleted silicon-on-insulator (FD-SOI) transistors (150) and partially-depleted silicon-on-insulator (FD-SOI) transistors (152) on a semiconductor substrate (104) as part of an integrated circuit fabrication...	08/12/2008
7390702	Method for manufacturing semiconductor device Laser is applied onto part on an SOS substrate using a sapphire layer to form an identifying mark. The sapphire layer on the surface of the SOS substrate, which has been exposed upon laser application, is covered with an insulating film formed by heat treatment at 7...	06/24/2008
7361534	Method for fabricating SOI device A method is provided for fabricating a semiconductor on insulator (SOI) device. The method includes, in one embodiment, providing a monocrystalline silicon substrate having a monocrystalline silicon layer overlying the substrate and separated therefrom by a dielectr...	04/22/2008
7291521	Self correcting suppression of threshold voltage variation in fully depleted transistors A semiconductor fabrication method includes implanting or otherwise introducing a counter doping impurity distribution into a semiconductor top layer of a silicon-on-insulator (SOI) wafer. The top layer has a variable thickness including a first thickness at a first...	11/06/2007
7064021	Method for fomring a self-aligned LTPS TFT A method for forming a self-aligned low temperature polysilicon thin film transistor (LTPS TFT). First, active layers of a N type LTPS TFT (NLTPS TFT) and a P type LTPS TFT (PLTPS TFT) are formed on a substrate, and a gate insulating (GI) layer is formed on the subs...	06/20/2006
6617187	Method for fabricating an electrically addressable silicon-on-sapphire light valve A method for fabricating a monolithically integrated liquid crystal array display and control circuitry on a silicon-on-sapphire structure comprises the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphir...	09/09/2003
6531742	Method of forming CMOS device A CMOS device and a method for fabricating the same, is disclosed, the device including an insulating film formed on a substrate, first and second sapphire patterns formed on the insulating film at fixed intervals, first and second epitaxial semiconductor...	03/11/2003
6531739	Radiation-hardened silicon-on-insulator CMOS device, and method of making the same A method for eliminating the radiation-induced off-state current in the P-channel ultrathin silicon-on-sapphire transistor, by providing a retrograde dopant concentration profile that has the effect of moving the Fermi level at the back of the device away...	03/11/2003
6404038	Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors A method for fabricating complementary vertical bipolar junction transistors of silicon-on-sapphire in fewer steps than required for true complimentary vertical bipolar junction transistors is disclosed. Initially a thin layer of silicon is grown on a sap...	06/11/2002
6399429	Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-t...	06/04/2002
6365936	Ultra-high resolution liquid crystal display on silicon-on-sapphire A liquid crystal array and associated drive circuitry are monolithically formed on a silicon-on-sapphire structure, and are fabricated by a method comprising the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-o...	04/02/2002
6235617	Semiconductor device and its manufacturing method It is intended to provide a semiconductor device and its manufacturing method in which a high-resistance region maintaining a high resistance even under high temperatures can be made in a nitride III-V compound semiconductor layer having an electric condu...	05/22/2001
6204100	CMOS device and method for fabricating the same A CMOS device and a method for fabricating the same, is disclosed, the device including an insulating film formed on a substrate, first and second sapphire patterns formed on the insulating film at fixed intervals, first and second epitaxial semiconductor...	03/20/2001
6190933	Ultra-high resolution liquid crystal display on silicon-on-sapphire A liquid crystal array and associated drive circuitry are monolithically formed on a silicon-on-sapphire structure, and are fabricated by a method comprising the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-o...	02/20/2001
6111273	Semiconductor device and its manufacturing method It is intended to provide a semiconductor device and its manufacturing method in which a high-resistance region maintaining a high resistance even under high temperatures can be made in a nitride III-V compound semiconductor layer having an electric condu...	08/29/2000
6057555	High-frequency wireless communication system on a single ultrathin silicon on sapphire chip A high-frequency wireless communication system on a single ultrathin silicon on sapphire chip is presented. This system incorporates analog, digital (logic and memory) and high radio frequency circuits on a single ultrathin silicon on sapphire chip. The d...	05/02/2000
6040200	Method of fabricating semiconductor device having stacked-layered substrate A method of fabricating a light valve device comprises forming a substrate having stacked layers including a light-shielding thin film layer, an insulating film, and a single crystalline semiconductor thin film stacked in this order on a transparent suppo...	03/21/2000
5926699	Method of fabricating semiconductor device having stacked layer substrate A method of fabricating a semiconductor device comprises the steps of sequentially forming a first gate electrode and an insulating film over a transparent support substrate, forming a through-hole in the insulating film, forming a semiconductor single cr...	07/20/1999
5900650	Semiconductor device and method of manufacturing the same There is disclosed a semiconductor device formed on a sapphire substrate, for example, a blue LED of a double-hetero structure having a laminated structure which comprises a first cladding layer made of a first conductivity type gallium nitride based semi...	05/04/1999
5883396	High-frequency wireless communication system on a single ultrathin silicon on sapphire chip A high-frequency wireless communication system on a single ultrathin silicon on sapphire chip is presented. This system incorporates analog, digital (logic and memory) and high radio frequency circuits on a single ultrathin silicon on sapphire chip. The d...	03/16/1999
5723359	Method for concurrently forming thin film resistor and thick film resistor on a hybrid integrated circuit substrate A method forms a thin film resistor with a thick film resistor on one hybrid IC substrate, and provides a high efficiency hybrid IC utilizing advantages of both resistors. The method includes the steps of: screen-printing a thick film resistor paste on an...	03/03/1998
5714793	Complementary vertical bipolar junction transistors formed in silicon-on-saphire A method is described for fabricating a complementary, vertical bipolar sconducting structure. An N+ silicon island and a P+ silicon island separated by a first oxide layer are formed on a sapphire substrate. An NPN junction device is formed on the N+ si...	02/03/1998
5672518	Method of fabricating semiconductor device having stacked layered substrate The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thi...	09/30/1997
5641691	Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire A method is described for fabricating a complementary, vertical bipolar semiconducting structure. An N+ silicon island and a P+ silicon island separated by a first oxide layer are formed on a sapphire substrate. An NPN junction device is formed on the N+ ...	06/24/1997
5621239	SOI device having a buried layer of reduced resistivity In a semiconductor device, first and second substrates are supported with respective first major surfaces in opposing, parallel and spaced relationship. A conductor layer of low resistivity material is provided on a selected one of the opposing and spaced...	04/15/1997
5587597	Semiconductor-on-insulator device interconnects A process for developing conductive interconnect regions between integrated circuit semiconductor devices formed on an insulating substrate utilizes the semiconductor material itself for formation of device interconnect regions. A patterned layer of semic...	12/24/1996
5480818	Method for forming a film and method for manufacturing a thin film transistor A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is incre...	01/02/1996
5472889	Method of manufacturing large-sized thin film transistor liquid crystal display panel A method of manufacturing a large-sized thin film transistor liquid crystal display panel in which a plurality of unit thin film transistor liquid crystal display panels are fabricated having a predetermined size on a polyimide substrate. A predetermined ...	12/05/1995
5466620	Method for fabricating a liquid crystal display device A method for fabricating a TFT-LCD which enables point defects such as electrical short circuits between a pixel and a thin film transistor or between a bus line and a pixel to be repaired during fabrication....	11/14/1995
5466618	Method for fabricating a thin film transistor for a liquid crystal display A method for fabricating an LCD-TFT, which can prevent degradation of image quality of a liquid crystal display by preventing blackening of the pixel electrode due to H2 plasma at the time of deposition of a protective insulation film. The meth...	11/14/1995
5449953	Monolithic microwave integrated circuit on high resistivity silicon A silicon-based monolithic microwave integrated circuit architecture is described. This architecture, called MICROX™, is a combination of silicon material growth and wafer processing technologies. A wafer is fabricated using a substrate of high resistiv...	09/12/1995
5391903	Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits A silicon layer formed atop a sapphire substrate is selectively recrystallized such that the original degraded quality of the crystallinity of an N-well region where a P-channel device is to be formed is enhanced, so that leakage in the P-channel device i...	02/21/1995
5362659	Method for fabricating vertical bipolar junction transistors in silicon bonded to an insulator A method is provided for manufacturing a bipolar transistor, comprising the teps of: 1) abutting a polished surface of a substantially single crystal silicon wafer with a polished surface of an insulating substrate; 2) heating the abutting silicon wafer an...	11/08/1994
5315144	Reduction of bipolar gain and improvement in snap-back sustaining voltage in SOI field effect transistor The gain of a parasitic lateral bipolar device in an MOS SOI structure is reduced to increase the differential between the snap-back sustaining voltage and the maximum recommended power supply voltage. Prior to insulated gate structure definition, very li...	05/24/1994
5298434	Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits A preamorphized silicon layer formed atop a sapphire substrate is selectively recrystallized such that the original degraded quality of the crystallinity of an N-well region where a P-channel device is to be formed is enhanced, so that leakage in the P-ch...	03/29/1994
5233211	Semiconductor device for driving a light valve The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thi...	08/03/1993

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Class 257/E21.704 - Substrate is nonsemiconductor body, e.g., insulating body (EPO)