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Class 257/E21.598 - Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.532. This subclass
No. of patents: 10
Last issue date: 09/02/2008


NumberTitleIssue Date
7419915Laser assisted chemical etching method for release microscale and nanoscale devices
A method using an etchant and a laser for localized precise heating enables precise etching and release of MEMS devices with improved process control while expanding the number of materials used to make MEMS, including silicon-dioxide patterned films buried in and s...
09/02/2008
7410874Method of integrating triple gate oxide thickness
A method for forming TGO structures includes providing a substrate containing regions of first, second and third kinds in which devices with respective first, second and third gate oxide layers of different thicknesses are to be formed. The second gate oxide layer i...
08/12/2008
7396775Method for manufacturing semiconductor device
The present invention discloses improved method for manufacturing semiconductor device wherein the gate oxide films in the cell region, VPP peripheral circuit region and VDD peripheral circuit region are formed to have different thicknesses fro...
07/08/2008
7323351Thin film transistor device and method of manufacturing the same
A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are form...
01/29/2008
7319046Integrated optoelectronic silicon biosensor for the detection of biomolecules labeled with chromophore groups or nanoparticles
An integrated optoelectronic silicon biosensor that can detect biomolecules by the change of the optical coupling between the integrated light source and the integrated detector that is caused by the binding of the appropriately labeled analytes onto the recognition...
01/15/2008
7297605Source/drain extension implant process for use with short time anneals
The present invention provides, in one embodiment, a process for fabricating a metal oxide semiconductor (MOS) device (100). The process includes forming a gate (120) on a substrate (105) and forming a source/drain extension (160) in the ...
11/20/2007
7229848Method and apparatus for fabricating self-assembling microstructures
A method and apparatus for assembling microstructures onto a substrate through fluid transport. The microstructures being shaped blocks self-align into recessed regions located on a substrate such that the microstructure becomes integral with the substrate. The impr...
06/12/2007
7208378Semiconductor device having multiple gate oxide layers and method of manufacturing thereof
A method of manufacturing a semiconductor device includes defining a first voltage region, a second voltage region, and a third voltage region on a substrate. The first, second, and third voltage regions are configured to handle first, second, and third voltage leve...
04/24/2007
7154133Semiconductor device and method of manufacture
The semiconductor regions for source and drain of unused p-channel type MISFETQp and the power supply wiring 2VDD are electrically connected and the semiconductor regions for source and drain of n-channel type MISFETQn and the power supply wiring 2VSS ...
12/26/2006
7135423Methods for forming low resistivity, ultrashallow junctions with low damage
Methods for forming ultrashallow junctions in semiconductor wafers include introducing into a shallow surface layer of a semiconductor wafer a dopant material that is selected to form charge carrier complexes which produce at least two charge carriers per complex, a...
11/14/2006
 
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