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| Number | Title | Issue Date |
| 7416975 | Method of forming contact layers on substrates A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined re... | 08/26/2008 |
| 7413978 | Substrate, electro-optical device, electronic apparatus, method of forming substrate, method of forming electro-optical device, and method of forming electronic apparatus A contact structure, including: a first conductive layer; a insulating layer formed on the first conductive layer; a second conductive layer formed on the insulating layer; and a columnar structure, buried in a direction of film thickness in the insulating layer, el... | 08/19/2008 |
| 7407884 | Method for forming an aluminum contact A method of forming an aluminum contact including forming a barrier metal layer on an interlayer insulation layer pattern defining a contact hole, and forming an aluminum layer on the barrier metal layer so as to fill the contact hole. The method further includes fo... | 08/05/2008 |
| 7402517 | Method and apparatus for selective deposition of materials to surfaces and substrates Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or thickness of material(s) deposited to the surface or substrate. In one exemp... | 07/22/2008 |
| 7393755 | Dummy fill for integrated circuits A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing proc... | 07/01/2008 |
| 7384867 | Formation of composite tungsten films Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer. ... | 06/10/2008 |
| 7375014 | Methods of electrochemically treating semiconductor substrates The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a si... | 05/20/2008 |
| 7371682 | Production method for electronic component and electronic component A method of manufacturing an electronic part in which on the upper surface of an insulating member covering lower layer wiring, a conductor portion connected from the lower layer wiring is exposed. In this method, electric power supplying film is formed on the upper... | 05/13/2008 |
| 7368379 | Multi-layer interconnect structure for semiconductor devices An interconnect structure for a semiconductor device and its method of manufacture is provided. The interconnect structure includes a multi-layer structure having one or more stress-relief layers. In an embodiment, stress-relief layers are positioned between layers ... | 05/06/2008 |
| 7344977 | Method of electroplating a substance over a semiconductor substrate The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a si... | 03/18/2008 |
| 7344986 | Plating solution, semiconductor device and method for manufacturing the same The present invention relates to a plating solution useful for forming embedded interconnects by embedding a conductive material in fine recesses for interconnects provided in the surface of a substrate, such as a semiconductor substrate, or for forming a protective... | 03/18/2008 |
| 7341945 | Method of fabricating semiconductor device A method of fabricating a semiconductor device prevents agglomeration of a seed metal layer in a recess. A recess is formed in a dielectric layer formed on or over a wafer. A seed metal layer (e.g., Cu or Cu alloy) is then formed on a bottom face and an inner side f... | 03/11/2008 |
| 7329582 | Methods for fabricating a semiconductor device, which include selectively depositing an electrically conductive material Methods are provided for fabricating a semiconductor device having an impurity doped region in a silicon substrate. The method comprises forming a metal silicide layer electrically contacting the impurity doped region and depositing a conductive layer overlying and ... | 02/12/2008 |
| 7314827 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a plated film on a substrate which has a recessed portion on its surface so as to bury in the recessed portion by a plating method; forming over the pl... | 01/01/2008 |
| 7312149 | Copper plating of semiconductor devices using single intermediate low power immersion step A method of electroplating a metal layer on a semiconductor device includes a sequence of biasing operations that includes a first electroplating step at a first current density followed by a second immersion step at a second current density being less than the firs... | 12/25/2007 |
| 7238610 | Method and apparatus for selective deposition A method for selectively depositing a source material on a wafer is disclosed. In one embodiment, a wafer is having at least one recessed feature is provided. A top surface of the wafer is then coated with an inhibiting material. Finally, a source material is select... | 07/03/2007 |
| 7226860 | Method and apparatus for fabricating metal layer A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemica... | 06/05/2007 |
| 7189638 | Method for manufacturing metal structure using trench A method for manufacturing a metal structure using a trench includes etching a semiconductor substrate to form a trench, depositing a seed layer over the semiconductor substrate including in the trench, stacking an insulating layer over the seed layer, removing a po... | 03/13/2007 |
| 7189650 | Method and apparatus for copper film quality enhancement with two-step deposition The disclosure relates to a method and apparatus for enhancing copper film quality with a two-step deposition. The two step deposition may include depositing a first copper film by electrochemical plating, annealing the first copper film at a desired temperature for... | 03/13/2007 |
| 7169700 | Metal interconnect features with a doping gradient A metal filled damascene structure with improved electromigration resistance and method for forming the same, the method including providing a semiconductor process wafer comprising damascene openings; and, depositing metal and at least one metal dopant according to... | 01/30/2007 |
| 7144811 | Method of forming a protective layer over Cu filled semiconductor features A method of forming a protective layer over a metal filled semiconductor feature to prevent metal oxidation including providing a semiconductor process wafer comprising an insulating dielectric layer having an opening for forming a semiconductor feature; blanket dep... | 12/05/2006 |
| 7067351 | Selectively-etched nanochannel electrophoretic and electrochemical devices Nanochannel electrophoretic and electrochemical devices having selectively-etched nanolaminates located in the fluid transport channel. The normally flat surfaces of the nanolaminate having exposed conductive (metal) stripes are selectively-etched to form trenches a... | 06/27/2006 |
| 6992389 | Barrier for interconnect and method A method of creating a multi-layered barrier for use in an interconnect, a barrier for an interconnect, and an interconnect including the barrier are disclosed. The method includes creating the multi-layered barrier in a recess of the device terminal by use of a sin... | 01/31/2006 |
| 6703708 | Graded thin films Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of imp... | 03/09/2004 |
| 6699396 | Methods for electroplating large copper interconnects A method for forming conductive features in dielectric materials is disclosed which includes providing a dielectric layer and forming a release layer over the dielectric layer. Then a feature is defined into the each of the release layer and the dielectri... | 03/02/2004 |
| 6699790 | Semiconductor device fabrication method for filling high aspect ratio openings in insulators with aluminum A semiconductor device fabrication method having a recess region in an insulation layer on a silicon substrate, includes the steps of depositing a barrier metal on an entire surface of the insulation layer, filling the recess region with an oxide layer, r... | 03/02/2004 |
| 6696761 | Method to encapsulate copper plug for interconnect metallization An encapsulated copper plug on a doped silicon semiconductor substrate has a substrate surface, covered with insulation, with a plug hole with a diffusion barrier formed on the walls and the bottom of the hole to the top of the hole. The plug hole is part... | 02/24/2004 |
| 6682989 | Plating a conductive material on a dielectric material A surface may be selectively coated with a polymer using an induced surface grafting or polymerization reaction. The reaction proceeds in those regions that are polymerizable and not in other regions. Thus, a semiconductor structure having organic regions... | 01/27/2004 |
| 6683357 | Semiconductor constructions The invention includes a method of forming a semiconductor construction. A metal-rich metal suicide layer is formed on a silicon-comprising substrate, and a metal nitride layer is formed on the metal-rich metal silicide layer. The metal-rich metal silicid... | 01/27/2004 |
| 6673718 | Methods for forming aluminum metal wirings An aluminum wiring is selectively formed within a contact hole or groove of a substrate. An intermediate layer which includes nitrogen is formed over the main surface of a substrate and over the interior surface of the contact hole or groove. A first surf... | 01/06/2004 |
| 6673704 | Semiconductor device and method of manufacturing the same A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, fillin... | 01/06/2004 |
| 6667220 | Method for forming junction electrode of semiconductor device A method for forming a junction electrode of a semiconductor device where a gate is formed on a semiconductor substrate by using a predetermined device structure, a contact hole is formed by stacking an interlayer insulation film on the gate, and n-type a... | 12/23/2003 |
| 6660650 | Selective aluminum plug formation and etchback process An embodiment of the instant invention is a method of fabricating an electronic device over a semiconductor substrate having an interconnecting structure comprised of aluminum, the method comprising the steps of: forming a conductive structure (layers 120... | 12/09/2003 |
| 6632335 | Plating apparatus A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its su... | 10/14/2003 |
| 6610596 | Method of forming metal interconnection using plating and semiconductor device manufactured by the method A method is provided for forming a metal interconnection using a plating process, which can improve the throughput and reliability of semiconductor devices by decreasing the required polishing in a chemical mechanical polishing process. A semiconductor de... | 08/26/2003 |
| 6593656 | Multilevel copper interconnects for ultra large scale integration A method of manufacturing integrated circuits using a thin metal oxide film as a seed layer for building multilevel interconnects structures in integrated circuits. Thin layer metal oxide films are deposited on a wafer, and standard optical lithography is... | 07/15/2003 |
| 6562707 | Method of forming a semiconductor device using selective epitaxial growth A method of forming a semiconductor device using selective epitaxial growth (SEG) is provided. This method includes forming an insulating layer pattern having a window on a semiconductor substrate. The window exposes a predetermined region of the semicond... | 05/13/2003 |
| 6552432 | Mask on a polymer having an opening width less than that of the opening in the polymer A typical integrated circuit interconnects millions of microscopic transistors and resistors with aluminum wires buried in silicon-dioxide insulation. Yet, aluminum wires and silicon-dioxide insulation are a less attractive combination than gold, silver, ... | 04/22/2003 |
| 6548410 | Method of fabricating wires for semiconductor devices A method of forming wires for semiconductor devices can restrict increase of a wires resistance and a contact resistance of the semiconductor device by forming a plug without generating a void or keyhole, and includes a step of forming an insulation film ... | 04/15/2003 |
| 6541379 | Wiring forming method for semiconductor device Grooves and holes of high aspect ratio are filled completely and uniformly. After forming connection holes (3) and wiring grooves (4) in a silicon oxide film (2) which is formed on a silicon substrate (1), a TiN film (5) is formed over the entire surface ... | 04/01/2003 |
