Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
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| Number | Title | Issue Date |
| 7442585 | MOSFET with laterally graded channel region and method for manufacturing same The present invention relates generally to a semiconductor device having a channel region comprising a semiconductor alloy of a first semiconductor material and a second, different material, and wherein atomic distribution of the second material in the channel regio... | 10/28/2008 |
| 7432204 | Wafer and the manufacturing and reclaiming methods thereof A wafer and the manufacturing and reclaiming methods thereof are disclosed. The wafer includes a semiconductor substrate and a protective layer formed on the surface of the semiconductor substrate. The reclaiming method of the wafer includes providing a wafer having... | 10/07/2008 |
| 7381629 | Method of forming through-wafer interconnects for vertical wafer level packaging A substrate having target transfer regions thereon is provided. A sacrificial wafer is coated with a polymer layer with low adhesion to metals. A conductive layer is coated on the polymer layer and covered with a photoresist layer which is patterned to provide openi... | 06/03/2008 |
| 7365729 | Field sequential LCD device and color image display method thereof In a liquid crystal display device, a field sequential liquid crystal display device includes a liquid crystal panel having an upper substrate, a lower substrate and a liquid crystal layer therebetween; a backlight device under the liquid crystal panel for irradiati... | 04/29/2008 |
| 7361573 | Method of peeling off and method of manufacturing semiconductor device The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the inventio... | 04/22/2008 |
| 7355248 | Metal oxide semiconductor (MOS) device, metal oxide semiconductor (MOS) memory device, and method of manufacturing the same A semiconductor device includes a first semiconductor layer that is formed on a first insulating layer; a second insulating layer that is formed on the first semiconductor layer; a second semiconductor layer that is formed on the second insulating layer; a first gat... | 04/08/2008 |
| 7348257 | Process for manufacturing wafers of semiconductor material by layer transfer A process manufactures a wafer using semiconductor processing techniques. A bonding layer is formed on a top surface of a first wafer; a deep trench is dug in a substrate of semiconductor material belonging to a second wafer. A top layer of semiconductor material is... | 03/25/2008 |
| 7348260 | Method for forming a relaxed or pseudo-relaxed useful layer on a substrate A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a mate... | 03/25/2008 |
| 7332412 | Structure of strained silicon on insulator and method of manufacturing the same Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO | 02/19/2008 |
| 7320929 | Method of fabricating SOI wafer In order to adjust thickness of a bonded silicon single crystal film 15 depending of thickness of an SOI layer 5 to be obtained, depth of formation d1+tx of a separatory ion implanted layer 4, measured from a first main surface J, in the ... | 01/22/2008 |
| 7297611 | Method for producing thin layers of semiconductor material from a donor wafer A method for producing thin layers of a semiconductor material from a donor wafer, which comprises in succession forming a first weakened region in a donor wafer below a first face and at a depth corresponding substantially to the thickness of a first thin layer to ... | 11/20/2007 |
| 7297612 | Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ... | 11/20/2007 |
| 7285476 | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same A transferring method including providing a substrate, forming a transferred layer over the substrate, joining a transfer member to the transferred layer, and removing the transferred layer from the substrate. The transferring method further includes transferring th... | 10/23/2007 |
| 7271076 | Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off l... | 09/18/2007 |
| 7259091 | Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment,... | 08/21/2007 |
| 7256102 | Manufacturing method of thin film device substrate An object of the present invention is to prevent the thin film device formed by laser annealing from making, due to overheat, abnormal operations. Firstly, on a glass substrate 101. a heat insulating film, a silicon oxide film and an amorphous silicon film ar... | 08/14/2007 |
| 7256104 | Substrate manufacturing method and substrate processing apparatus An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which ... | 08/14/2007 |
| 7208411 | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module A method of depositing a metal film on a substrate includes a supercritical preclean step, a supercritical desorb step, and a metal deposition step. Preferably, the preclean step comprises maintaining supercritical carbon dioxide and a chelating agent in contact wit... | 04/24/2007 |
| 7187085 | Semiconductor device including dual damascene interconnections A method (and structure) of forming an interconnect on a semiconductor substrate, includes forming a relatively narrow first structure in a dielectric formed on a semiconductor substrate, forming a relatively wider second structure in the dielectric formed on the se... | 03/06/2007 |
| 7183176 | Method of forming through-wafer interconnects for vertical wafer level packaging A wafer is provided having through-holes therein to form a through-hole via wafer. A substrate of a sacrificial wafer is provided. The substrate is coated with a polymer having low adhesion to metals. A conductive layer is deposited on the polymer. A photoresist lay... | 02/27/2007 |
| 7148119 | Process for production of semiconductor substrate A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystall... | 12/12/2006 |
| 7087980 | Film thickness measuring monitor wafer The object of the present invention is to provide a wafer having a structure of enabling an SiC wafer to be put to practical use as a wafer for monitoring a film thickness. For this purpose, an average surface roughness Ra of at least one surface of the SiC wafer is... | 08/08/2006 |
| 6682990 | Separation method of semiconductor layer and production method of solar cell The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opp... | 01/27/2004 |
| 6664169 | Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of th... | 12/16/2003 |
| 6660606 | Semiconductor-on-insulator annealing method The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less than the melting point of a semiconductor, annealing is exe... | 12/09/2003 |
| 6656271 | Method of manufacturing semiconductor wafer method of using and utilizing the same A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substr... | 12/02/2003 |
| 6653205 | Composite member separating method, thin film manufacturing method, and composite member separating apparatus This invention relates to a composite member separating method in which a first member (1) having a separation layer (4) and a transfer layer (5) on the separation layer (4) is bonded to a second member (2) is separated at a position different from the bo... | 11/25/2003 |
| 6653209 | Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device To decrease the thickness of a silicon thin film to a desired value without deterioration of the quality thereof while avoiding the surface roughness due to speed increasing oxidation of crystal defect portions occurring when conducting the conventional s... | 11/25/2003 |
| 6649485 | Method for the formation and lift-off of porous silicon layers A method for the manufacture, formation, and removal of porous layers in a semiconductor substrate having at least a surface acting as a cathode. The method comprises applying a solution comprising negative Fluorine (F-) ions between the surfac... | 11/18/2003 |
| 6649492 | Strained Si based layer made by UHV-CVD, and devices therein A method for fabricating a strained Si based layer, devices manufactured in this layer, and electronic systems comprising such layers and devices are disclosed. The method comprises the steps of growing epitaxially a SiGe layer on a substrate, and creatin... | 11/18/2003 |
| 6645833 | Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method The invention relates to a method of manufacturing layer-like structures in which a material layer having hollow cavities, preferably a porous material layer, is produced on or out of a substrate consisting, for example, of monocrystalline p-type or n-typ... | 11/11/2003 |
| 6645830 | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same A method for transferring a thin film device on a substrate onto a transfer member, includes a step for forming a separation layer on the substrate, a step for forming a transferred layer including the thin film device on the separation layer, a step for ... | 11/11/2003 |
| 6633066 | CMOS integrated circuit devices and substrates having unstrained silicon active layers CMOS integrated circuit devices include an electrically insulating layer and an unstrained silicon active layer on the electrically insulating layer. An insulated gate electrode is also provided on a surface of the unstrained silicon active layer. A Si | 10/14/2003 |
| 6624047 | Substrate and method of manufacturing the same In a method of manufacturing a bonded substrate stack by bonding a first substrate having a porous layer to a second substrate to prepare a bonded substrate stack, and separating the bonded substrate stack into two substrates at the porous layer, defects ... | 09/23/2003 |
| 6613676 | Process of reclamation of SOI substrate and reproduced substrate An SOI substrate 1 having semiconductor base plate 2 and a single crystal semiconductor layer 4 with interposition of an insulating layer 3 is prepared is reclaimed through a first removal step of removing the single crystal semiconductor layer 4, and a s... | 09/02/2003 |
| 6613638 | Soi annealing method for reducing HF defects, with lamp, without crystal original particle (COP) The HF defect density in an SOI is reduced. After annealing step (S2) of annealing an SOI at a temperature between the melting point (e.g., 993° C.) of a semiconductor metal compound (e.g., nickel silicide) formed from a metal and the semiconductor mater... | 09/02/2003 |
| 6609446 | Separating apparatus, separating method, and method of manufacturing semiconductor substrate When a bonded substrate stack prepared by bonding a first substrate in which a single-crystal Si layer is formed on a porous layer, and an insulating layer is formed on the single-crystal Si layer to a second substrate is to be separated at the porous lay... | 08/26/2003 |
| 6605518 | Method of separating composite member and process for producing thin film To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane... | 08/12/2003 |
| 6602760 | Method of producing a semiconductor layer on a substrate A method of producing a semiconductor layer onto a semiconductor substrate. The method comprises providing a first semiconductor substrate, and providing a second semiconductor substrate. The method also comprises producing a porous layer, which has a por... | 08/05/2003 |
| 6602767 | Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery A method for transferring a porous layer includes forming a porous layer on one side of a crystalline silicon member by anodization, fixing a supporting substrate onto the surface of the porous layer, and applying force to any one of the supporting substr... | 08/05/2003 |
