Did You Know...
...that the video game, Pong, was invented by a guy who graduated at the bottom of his engineering class? Nolan Bushnell spent more time running the games at a local amusement park than he did on his studies at the University of Utah. His dreams of working for Disney's amusement empire were dashed when the company wouldn't hire him. Taking a boring job, Nolan daydreamed about electronic versions of popular games. He invented Pong, the first video game, and went on to found Atari Co.
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| Number | Title | Issue Date |
| 7442623 | Method for manufacturing bonded substrate and bonded substrate manufactured by the method A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlappi... | 10/28/2008 |
| 7435662 | Method for manufacturing SOI wafer The present invention provide a method for manufacturing an SOI wafer which suppresses voids from being generated in an SOI wafer, especially, in an outer peripheral portion thereof to achieve high productivity. According to the present invention, in a method for ma... | 10/14/2008 |
| 7432532 | Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die. ... | 10/07/2008 |
| 7416960 | Method for manufacturing SOI substrate The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the... | 08/26/2008 |
| 7410885 | Method of reducing contamination by removing an interlayer dielectric from the substrate edge By performing at least one additional wet chemical etch process in the edge region and in particular on the bevel of a substrate during the formation of a metallization layer, the dielectric material, especially the low-k dielectric material, may be reliably removed... | 08/12/2008 |
| 7390725 | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation Transistors fabricated on SSOI (Strained Silicon On Insulator) substrate, which comprises a strained silicon layer disposed directly on an insulator layer, have enhanced device performance due to the strain-induced band modification of the strained silicon device ch... | 06/24/2008 |
| 7381624 | Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrate By direct bonding of two crystalline semiconductor layers of different crystallographic orientation and/or material composition and/or internal strain, bulk-like hybrid substrates may be formed, thereby providing the potential for forming semiconductor devices in ac... | 06/03/2008 |
| 7381629 | Method of forming through-wafer interconnects for vertical wafer level packaging A substrate having target transfer regions thereon is provided. A sacrificial wafer is coated with a polymer layer with low adhesion to metals. A conductive layer is coated on the polymer layer and covered with a photoresist layer which is patterned to provide openi... | 06/03/2008 |
| 7378729 | Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer lo... | 05/27/2008 |
| 7375008 | Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-... | 05/20/2008 |
| 7375006 | Peeling method A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, th... | 05/20/2008 |
| 7375005 | Method for reclaiming and reusing wafers Embodiments of the present invention provide a method for reclaiming and reusing a wafer. In one embodiment, a method for reclaiming a wafer comprises providing a used, nonproductive wafer having a semiconductor substrate and a polysilicon layer formed on the semico... | 05/20/2008 |
| 7365729 | Field sequential LCD device and color image display method thereof In a liquid crystal display device, a field sequential liquid crystal display device includes a liquid crystal panel having an upper substrate, a lower substrate and a liquid crystal layer therebetween; a backlight device under the liquid crystal panel for irradiati... | 04/29/2008 |
| 7361573 | Method of peeling off and method of manufacturing semiconductor device The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the inventio... | 04/22/2008 |
| 7348257 | Process for manufacturing wafers of semiconductor material by layer transfer A process manufactures a wafer using semiconductor processing techniques. A bonding layer is formed on a top surface of a first wafer; a deep trench is dug in a substrate of semiconductor material belonging to a second wafer. A top layer of semiconductor material is... | 03/25/2008 |
| 7348260 | Method for forming a relaxed or pseudo-relaxed useful layer on a substrate A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a mate... | 03/25/2008 |
| 7323398 | Method of layer transfer comprising sequential implantations of atomic species A method of manufacturing a crystalline wafer that includes implanting first atomic species in a donor substrate to form a region of weakness at a first depth therein and configured to facilitate detachment of a first layer of the donor substrate from a remaining po... | 01/29/2008 |
| 7320929 | Method of fabricating SOI wafer In order to adjust thickness of a bonded silicon single crystal film 15 depending of thickness of an SOI layer 5 to be obtained, depth of formation d1+tx of a separatory ion implanted layer 4, measured from a first main surface J, in the ... | 01/22/2008 |
| 7307006 | Method of manufacturing semiconductor device It is an object of the present invention to provide a technology to manufacture a semiconductor sheet or a semiconductor chip with a high yield using a circuit having a thin film transistor. A manufacturing method for a semiconductor device comprises: attaching a fl... | 12/11/2007 |
| 7300856 | Process for detaching layers of material A process for detaching two layers of material according to a weakened zone defined between the layers. This process includes the thermal annealing of a structure that incorporates the layers, with the annealing bringing the temperature from a starting temperature t... | 11/27/2007 |
| 7297611 | Method for producing thin layers of semiconductor material from a donor wafer A method for producing thin layers of a semiconductor material from a donor wafer, which comprises in succession forming a first weakened region in a donor wafer below a first face and at a depth corresponding substantially to the thickness of a first thin layer to ... | 11/20/2007 |
| 7279751 | Semiconductor laser device and manufacturing method thereof It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate... | 10/09/2007 |
| 7271076 | Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off l... | 09/18/2007 |
| 7256075 | Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be fo... | 08/14/2007 |
| 7256103 | Method for manufacturing a compound material wafer The invention relates to a method for manufacturing a compound material wafer. The technique includes forming a weakened zone in a source substrate, attaching the source substrate to a handle substrate to form a source-handle assembly, and thermally annealing the so... | 08/14/2007 |
| 7253082 | Pasted SOI substrate, process for producing the same and semiconductor device A plurality of recessed portions having different depths is formed in a surface of the active layer wafer or in a bonding surface of the supporting substrate wafer. Those wafers are bonded to each other with an insulation film interposed therebetween. This allows a ... | 08/07/2007 |
| 7247545 | Fabrication of a low defect germanium film by direct wafer bonding A method of fabricating a low defect germanium thin film includes preparing a silicon wafer for germanium deposition; forming a germanium film using a two-step CVD process, annealing the germanium thin film using a multiple cycle process; implanting hydrogen ions; d... | 07/24/2007 |
| 7217639 | Method of manufacturing a material compound wafer The invention relates to a method for manufacturing a material compound wafer by forming a predetermined splitting area in a source substrate; attaching the source substrate to a handle substrate to form an assembly; heating the assembly for weakening the predetermi... | 05/15/2007 |
| 7195931 | Split manufacturing method for advanced semiconductor circuits A front-end-of-line piece of a semiconductor die is manufactured in a first manufacturing line. A back-end-of-line piece of a semiconductor die is manufactured using a second manufacturing line, which will typically be different than the first manufacturing line. Th... | 03/27/2007 |
| 7183176 | Method of forming through-wafer interconnects for vertical wafer level packaging A wafer is provided having through-holes therein to form a through-hole via wafer. A substrate of a sacrificial wafer is provided. The substrate is coated with a polymer having low adhesion to metals. A conductive layer is deposited on the polymer. A photoresist lay... | 02/27/2007 |
| 7179718 | Structure and method of manufacturing the same A method of manufacturing a structure in which a substrate can be removed easily from a structure that has been formed on the substrate by using a film forming technology. The method of manufacturing a structure includes the steps of (a) forming an intermediate laye... | 02/20/2007 |
| 7176072 | Strained silicon devices transfer to glass for display applications A method of fabricating strained silicon devices for transfer to glass for display applications includes preparing a wafer having a silicon substrate thereon; forming a relaxed SiGe layer on the silicon substrate; forming a strained silicon layer on the relaxed SiGe... | 02/13/2007 |
| 7176102 | Method for producing SOI wafer and SOI wafer A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the m... | 02/13/2007 |
| 7170098 | Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die. ... | 01/30/2007 |
| 7148124 | Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers Process for forming a fragile layer inside of a single crystalline substrate near one of the substrate surfaces. The fragile layer is created by collecting hydrogen in high concentration at a desired depth. The hydrogen layer is collected on a seed layer. The seed l... | 12/12/2006 |
| 7115481 | Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate A method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate. The method includes providing an initial structure that includes a useful layer having a front face on a support substrate. At... | 10/03/2006 |
| 7084046 | Method of fabricating SOI wafer After completion of annealing for bonding of the base wafer 1 and bond wafer 2, the bond wafer 2 is thinned to a first thickness suitable for ion implantation, and boron is ion-implanted to thereby form a high-boron-concentration layer 10... | 08/01/2006 |
| 7081399 | Method for producing a high quality useful layer on a substrate utilizing helium and hydrogen implantations A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein... | 07/25/2006 |
| 6902988 | Method for treating substrates for microelectronics and substrates obtained by said method The invention relates to a process for the treatment of substrates (1) for microelectronics or optoelectronics comprising a working layer (6) at least partially composed of an oxidizable material on at least one of their faces, this process comprising:... | 06/07/2005 |
| 6897124 | Method of manufacturing a bonded wafers using a Bernoulli chuck A bonded wafer 27 and a residual wafer 28 are placed in a state of being superimposed on each other on a susceptor 20 disposed in a heat treatment 10. A Bernoulli chuck 1 is moved to a wafer holding position 60 on a suscepto... | 05/24/2005 |
