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| Number | Title | Issue Date |
| 7420239 | Dielectric layer forming method and devices formed therewith Embodiments in accordance with the present invention provide alternative materials, and methods of forming such materials, that are effective as dielectric layers. Such embodiments include forming metal-containing dielectric layers over a silicon-containing substrat... | 09/02/2008 |
| 6875673 | Method of producing semiconductor device In an integrated pressure sensor including a semiconductor substrate having a p type single crystal silicon substrate and an n type epitaxial layer of which a portion is etched by electrochemical etching to have a diaphragm, an impurity diffusion layer piercing the ... | 04/05/2005 |
| 6589877 | Method of providing an oxide In the formation of semiconductor devices, a processing method is provided, including steps for forming an oxide layer. The embodied methods involve a series of oxidation steps, with optional interposed cleanings, as well as an optional conditioning step ... | 07/08/2003 |
| 6579769 | Semiconductor device manufacturing method including forming FOX with dual oxidation In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming a first window in the oxidation preventing layer, placing the semiconductor subs... | 06/17/2003 |
| 6495431 | Semiconductor device and method for manufacturing the same that includes a dual oxidation A first field oxidation is performed by masking an element-isolating region formation-expected region on a substrate by a first oxidation preventing film (silicon nitride film) having therein a first opening to thereby form a first field oxide film, which... | 12/17/2002 |
| 6492696 | Semiconductor device and process of manufacturing the same A semiconductor device comprises: gate electrode formed on a semiconductor substrate through the intervention of a gate insulating film; and a source/drain region provided with a silicide film on its surface and formed in the semiconductor substrate, wher... | 12/10/2002 |
| 6475927 | Method of forming a semiconductor device In the formation of semiconductor devices, a processing method is provided, including steps for forming an oxide layer. The embodied methods involve a series of oxidation steps, with optional interposed cleanings, as well as an optional conditioning step ... | 11/05/2002 |
| 6440819 | Method for differential trenching in conjunction with differential fieldox growth A local oxidation of silicon (LOCOS) process directed to forming differential field oxide thickness on a single wafer with minimized process steps and optimized planarity. When patterning the masking layer, at least two window widths are formed in the mas... | 08/27/2002 |
| 6420241 | Method for forming an isolation region in a semiconductor device and resulting structure using a two step oxidation process A method for forming an element isolation film of a semiconductor device and the semiconductor device. A pad insulator is constructed on a semiconductor substrate. An over-etching process is performed to recess the semiconductor substrate to a predetermin... | 07/16/2002 |
| 6362025 | Method of manufacturing a vertical-channel MOSFET A submicrometer vertical-channel MOSFET of high quality and reproducibility is produced by a method compatible with DPSA technology. The method steps are performed on a wafer of semiconductor material having a layer with n conductivity. First, n impurity ... | 03/26/2002 |
| 6291851 | Semiconductor device having oxide layers formed with different thicknesses Field oxide layers are provided for a semiconductor device in two different thickness, i.e., a first thickness for lower-voltage electronic elements and a second thickness for higher-voltage electronic elements. The second thickness is thicker than the fi... | 09/18/2001 |
| 6281065 | Semiconductor device fabrication method In order to define region in which a bipolar transistor is formed, region in which a MOS transistor is formed, and another predetermined region upon a substrate of p-type silicon, the substrate is selectively oxidized (by the LOCOS method). An element iso... | 08/28/2001 |
| 6265286 | Planarization of LOCOS through recessed reoxidation techniques A method of fabricating a semiconductor device which includes providing a silicon substrate having a patterned mask thereover to expose a portion of the surface of the substrate. The exposed surface portion is oxidized to form a sacrificial silicon oxide ... | 07/24/2001 |
| 6261926 | Method for fabricating field oxide The present invention provides a method for fabricating a field oxide on a semiconductor substrate. A first pad layer and a first mask layer is formed successively on the semiconductor substrate. An opening is formed in the first mask layer to define a re... | 07/17/2001 |
| 6255191 | Method of fabricating an isolation structure in an integrated circuit A semiconductor fabrication method is provided for the fabrication of an isolation structure including a shallow-trench isolation (STI) structure in an integrated circuit. This method is characterized by the increase in the thickness of the adhesive layer... | 07/03/2001 |
| 6187640 | Semiconductor device manufacturing method including various oxidation steps with different concentration of chlorine to form a field oxide In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming first window in the oxidation preventing layer, placing the semiconductor substr... | 02/13/2001 |
| 6174758 | Semiconductor chip having fieldless array with salicide gates and methods for making same A semiconductor process, which creates a semiconductor devices that includes logic transistors fabricated in a first region and a fieldless array fabricated in a second region, is provided. Both the logic transistors and the fieldless array transistors ha... | 01/16/2001 |
| 6110838 | Isotropic polysilicon plus nitride stripping A dry etch process for stripping LOCOS nitride masks (302) with fluorine based removal of oxynitride (312) followed by fluorine plus chlorine based removal of nitride (302) and any silicon buffer layer (303) without removal of pad oxide (304).... | 08/29/2000 |
| 6107145 | Method for forming a field effect transistor A method for forming a field effect transistor on a substrate includes providing a wordline on the substrate; providing composite masking spacers laterally outward relative to the wordline, the composite masking spacers comprising at least two different m... | 08/22/2000 |
| 6103020 | Dual-masked field isolation A field isolation process utilizes two or more isolation formation steps to form active areas on a semiconductor substrate. Each field isolation step forms a portion of the field isolation in a manner which reduces field oxide encroachment, in particular,... | 08/15/2000 |
| 6090685 | Method of forming a LOCOS trench isolation structure A semiconductor structure pad oxide layer is enlarged by local oxidation of silicon to form a field oxide. An etchback causes the thinnest portions of the field oxide to recede such that a portion of the semiconductor substrate is exposed. An etch through... | 07/18/2000 |
| 6063690 | Method for making recessed field oxide for radiation hardened microelectronics A method of forming a recessed electrically-insulating field oxide region in a semiconductor substrate is disclosed. In a preferred embodiment, the method includes the steps of oxidizing a surface of the substrate; depositing a polysilicon layer over the ... | 05/16/2000 |
| 6043135 | Process of fabricating a semiconductor device having trench isolation allowing pattern image to be exactly transferred to photo-resist layer extending thereon A trench isolation is formed in a silicon substrate for defining active areas assigned to circuit components, and has an upper surface lower than a gate oxide layer grown on the adjacent active area; when the trench isolation is formed, silicon oxide is r... | 03/28/2000 |
| 6027985 | Method for forming element isolating film of semiconductor device A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabric... | 02/22/2000 |
| 5989978 | Shallow trench isolation of MOSFETS with reduced corner parasitic currents A method is described for forming MOSFETs with shallow trench isolation wherein the abrupt corners introduced by anisotropically etching the silicon trenches are modified by an oxidation step which rounds off the corners and also reduces the effect of ten... | 11/23/1999 |
| 5966618 | Method of forming dual field isolation structures A method of providing thick and thin oxide structures reduces step changes between a core region and a peripheral region on an integrated circuit. Thin LOCOS structures are provided in a core region of a flash memory device, and thick LOCOS structures are... | 10/12/1999 |
| 5940719 | Method for forming element isolating film of semiconductor device A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabric... | 08/17/1999 |
| 5939761 | Method of forming a field effect transistor A method for forming a field effect transistor on a substrate includes providing a wordline on the substrate; providing composite masking spacers laterally outward relative to the wordline, the composite masking spacers comprising at least two different m... | 08/17/1999 |
| 5909630 | Dual-masked isolation A field isolation process utilizes two or more isolation formation steps to form active areas on a semiconductor substrate. Each field isolation step forms a portion of the field isolation in a manner which reduces field oxide encroachment, in particular,... | 06/01/1999 |
| 5880009 | Method for forming oxides on buried N+ -type regions A method for forming oxides on buried N+ -type regions in a memory cell fabrication process, suitable for forming oxides on the bury N+ -type regions before self-aligned MOS device etching, comprises: (1) implanting a high concentrat... | 03/09/1999 |
| 5861339 | Recessed isolation with double oxidation A method provides a recessed isolation is provided in a semiconductor substrate by (a) growing a first field oxide, (b) selectively removing portions of the first field oxide to leave recessed areas in the semiconductor substrate, and (c) growing a second... | 01/19/1999 |
| 5830798 | Method for forming a field effect transistor A method for forming a field effect transistor on a substrate includes providing a wordline on the substrate; providing composite masking spacers laterally outward relative to the wordline, the composite masking spacers comprising at least two different m... | 11/03/1998 |
| 5789306 | Dual-masked field isolation A field isolation process utilizes two or more isolation formation steps to form active areas on a semiconductor substrate. Each field isolation step forms a portion of the field isolation in a manner which reduces field oxide encroachment, in particular,... | 08/04/1998 |
| 5719086 | Method for isolating elements of semiconductor device A method for isolating the elements of semiconductor devices, in which bird's beak can be restrained by accumulating nitrogen atoms between a pad oxide film and a silicon substrate and the etch depth of a silicon substrate can be controlled by use of wet ... | 02/17/1998 |
| 5719085 | Shallow trench isolation technique A method of forming a trench isolation region. The method of the present invention comprises the steps of forming an opening in a semiconductor substrate, oxidizing the opening a first time, and then etching the oxidized opening with a wet etchant compris... | 02/17/1998 |
| 5696021 | Method of making a field oxide isolation structure A method for creating isolation structures in a substrate without having to increase the field implant doses to prevent punch through. This particular advantage is achieved by first growing a pad oxide on the substrate. Polysilicon is deposited on top of ... | 12/09/1997 |
| 5696022 | Method for forming field oxide isolation film A method for forming a field oxide film for element isolation of a structure extending deeply in the substrate and having a step of small height, thereby exhibiting a low topology and a reduced bird's beak. The method includes the steps of forming a patte... | 12/09/1997 |
| 5686344 | Device isolation method for semiconductor device An improved device isolation method for a semiconductor device capable of independently and compatibly providing an isolation film in the interior of well and an isolation film between wells during a consistent process, so that latch-up characteristic can... | 11/11/1997 |
| 5686347 | Self isolation manufacturing method A method provides for manufacturing an MOSFET semiconductor device with an array of semiconductor structures on a lightly doped semiconductor substrate. A mask is formed upon the substrate with openings therein. An oxide is formed in the semiconductor sub... | 11/11/1997 |
| 5612242 | Trench isolation method for CMOS transistor A method of performing trench isolation in a CMOS transistor, that produces no latch-up and results in an effective isolating structure without using an epitaxial growth process. A field oxide layer is provided on a silicon substrate to isolate an active ... | 03/18/1997 |
