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| Number | Title | Issue Date |
| 7364930 | Method for producing micromechanical and micro-optic components consisting of glass-type materials What is proposed here is a method of structuring surfaces of glass-type materials and variants of this method, comprising the following steps of operation: providing a semiconductor substrate, structuring, with the formation of recesses, of at least one surface of t... | 04/29/2008 |
| 7361541 | Programming optical device A semiconductor light emitting device and a method to form the same are disclosed. The device has at least one porous or low density dielectric region formed in or on top of a bottom electrode, at least one top electrode on the porous or low density dielectric regio... | 04/22/2008 |
| 7256473 | Composite structure with high heat dissipation A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered s... | 08/14/2007 |
| 7211461 | Manufacturing apparatus The purpose of the invention is increasing the efficiency of utilizing an EL material and providing a deposition method and a vapor deposition apparatus which is one of the film formation systems which are excellent in throughput and uniformity in film thickness in ... | 05/01/2007 |
| 7205167 | Method to detect photoresist residue on a semiconductor device A method for detecting photoresist residue during semiconductor device manufacture includes developing photoresist on a surface of a semiconductor device to expose portions of the surface A plurality of etch paths are then partially etched into the surface and inspe... | 04/17/2007 |
| 6656678 | Method for examination of a surface layer In a method for examination of the surface of an object for a topographic and/or a chemical property, the object-surface is impinged with surface-structure selective biocomponents for examination of a topographic property and/or with chemoselective biocom... | 12/02/2003 |
| 6650022 | Semiconductor device exhibiting enhanced pattern recognition when illuminated in a machine vision system A bumped semiconductor device (10) exhibiting enhanced pattern recognition when illuminated in a machine vision system. The semiconductor device has a substantially coplanar array of solder bumps (16) and a coating of underfill material (17) on one face. ... | 11/18/2003 |
| 6642150 | Method for testing for blind hole formed in wafer layer A new method for detecting blind holes in the contact layer of a multi-chip semiconductor test wafer makes use of the fact that if the hole is not a blind hole, a subsequent etch step extends the hole a predetermined distance into the layer immediately un... | 11/04/2003 |
| 6617176 | METHOD OF DETERMINING BARRIER LAYER EFFECTIVENESS FOR PREVENTING METALLIZATION DIFFUSION BY FORMING A TEST SPECIMEN DEVICE AND USING A METAL PENETRATION MEASUREMENT TECHNIQUE FOR FABRICATING A PRODUCTION SEMICONDUCTOR DEVICE AND A TEST SPECIMEN DEVICE THEREBY FORMED A method (M) of determining the effectiveness of a deposited thin conformal barrier layer (30) by forming a test specimen and measuring the copper (Cu) penetration from a metallization layer (40) through the barrier layer (30) (e.g., refractory metals, th... | 09/09/2003 |
| 6600557 | Method for the detection of processing-induced defects in a silicon wafer A process for detecting mechanical and mechanochemical defects in the surface or edge of a silicon wafer resulting from a wafer manufacturing process. The present process comprises treating a surface of the silicon wafer with an aqueous etch solution comp... | 07/29/2003 |
| 6596553 | Method of pinhole decoration and detection An exemplary embodiment relates to a method of pinhole decoration and detection. The method can include providing a material layer above an amorphous carbon layer where the material layer has a pinhole, providing a film over the material layer where the f... | 07/22/2003 |
| 6521355 | Optical color tracer indentifier in metal paste that bleed to greensheet A coating material used in the fabrication of electronic components such as a metallized paste is provided comprising a material to be coated on the electronic component substrate and an identifying component which identifying component can be identified ... | 02/18/2003 |
| 6521470 | Method of measuring thickness of epitaxial layer A method of measuring the thickness of an epitaxial layer is disclosed. The method is particularly useful in measuring the epitaxial layer with a doping concentration lower than or similar to the substrate on which the epitaxial layer is formed. The metho... | 02/18/2003 |
| 6518591 | Contact monitor, method of forming same and method of analizing contact-, via- and/or trench-forming processes in an integrated circuit Methods for monitoring defects in a process for forming a contact hole, via or trench in a layer of a device in an integrated circuit includes the steps of forming a sacrificial topology on a substrate by duplicating at least a portion of a structure of t... | 02/11/2003 |
| 6511920 | Optical marker layer for etch endpoint determination A method of forming an optical marker layer for etch endpoint determination in integrated circuit fabrication processes is disclosed. The optical marker layer is used in conjunction with organic and/or carbon-containing material layers that are used as bu... | 01/28/2003 |
| 6509198 | Method of power IC inspection The present invention provides a method of power IC inspection to inspect whether an electrically-failed portion of power ICs results from photo resist peeling before or during source implantation. First, the metal layers on the power ICs are removed by t... | 01/21/2003 |
| 6492188 | Monitor method for quality of metal ARC (antireflection coating) layer The present invention relates to a monitor method for quality of metal Antireflection Coating (ARC) layer and, more particularly, to a fast and accurate monitor method for quality of metal ARC layer. By using of immersing a silicon wafer comprising an ARC... | 12/10/2002 |
| 6440621 | Method of detecting film defects using chemical exposure of photoresist films Various methods of inspecting a semiconductor workpiece for defects are provided. In one aspect, a method of inspecting a surface of a semiconductor workpiece for defects is provided that includes applying a negative-tone photoresist film to the surface a... | 08/27/2002 |
| 6433575 | Check abnormal contact and via holes by electroplating method A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate ... | 08/13/2002 |
| 6426791 | Method and apparatus for evaluating semiconductor film, and method for producing the semiconductor film Reflectance of a p-Si film crystallized by laser annealing is measured, a wave length dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wave length of 500 nm. The value is to be an i... | 07/30/2002 |
| 6417015 | Semiconductor processing methods and semiconductor defect detection methods Semiconductor processing methods and defect detection methods are described. In one embodiment, a semiconductor wafer in process is provided and a material is formed or deposited over the wafer. The material is discernably deposited over defective wafer s... | 07/09/2002 |
| 6403385 | Method of inspecting a semiconductor wafer for defects A method of decorating a semiconductor substrate with an etchant solution is provided for revealing defects, such as microscratches, resulting from an oxide chemical-mechanical planarization (CMP) polishing. An oxide layer is provided over the substrate m... | 06/11/2002 |
| 6399958 | Apparatus for visual inspection during device analysis Aspects for electrical trace inspection during device analysis for devices with solder ball attachments are described. In a method aspect, the method includes forming a desired integrated circuit device including bond wire attachments. The bond wire attac... | 06/04/2002 |
| 6387716 | Semiconductor processing methods and semiconductor defect detection methods Semiconductor processing methods and defect detection methods are described. In one embodiment, a semiconductor wafer in process is provided and a material is formed or deposited over the wafer. The material is discernably deposited over defective wafer s... | 05/14/2002 |
| 6368882 | Method for detecting organic contamination by using hemispherical-grain polysilicon layer The present invention discloses a method to detect organic contamination in process environment of integrated circuits by using hemispherical-grain polysilicon layer that is formed in the process environment. The organic residue will contaminates the subs... | 04/09/2002 |
| 6365423 | Method of inspecting a depth of an opening of a dielectric material layer For determining the quality of an opening formed in a dielectric material layer, a voltage contrast inspection tool is used to produce a voltage contrast image of a test pattern formed in the dielectric material layer. The voltage contrast values of openi... | 04/02/2002 |
| 6342400 | Dye penetrant test for semiconductor package assembly solder joints A method is provided for inspecting solder-bumped joints of a semiconductor package assembly comprising a packaged semiconductor device and a substrate, such as a circuit board. Embodiments include immersing the package assembly in a dye solution, such as... | 01/29/2002 |
| 6316277 | Tuning substrate/resist contrast to maximize defect inspection sensitivity for ultra-thin resist in DUV lithography There is provided a method for enhancing the contrast between oxide film and ultra-thin resists in deep-ultraviolet lithography for use with a wafer defect inspection system in order to maximize defect inspection sensitivity. This is achieved by varying t... | 11/13/2001 |
| 6300147 | Method of inspecting semiconductor substrate An SOI substrate having a silicon layer formed on an embedded oxide layer is prepared at a step ST11. An exposed surface of the silicon layer is thermally oxidized for forming a thermal oxide film at a step ST12. The thermal oxide film, enclosing a defect... | 10/09/2001 |
| 6261852 | Check abnormal contact and via holes by electroplating method A cathode-anode apparatus is constructed whereby the wafer under test, connected to a conducting wire, forms the cathode terminal and a copper plate, also connected to a conducting wire, forms the anode terminal. The wafer under test and the copper plate ... | 07/17/2001 |
| 6251693 | Semiconductor processing methods and semiconductor defect detection methods Semiconductor processing methods and defect detection methods are described. In one embodiment, a semiconductor wafer in process is provided and a material is formed or deposited over the wafer. The material is discernably deposited over defective wafer s... | 06/26/2001 |
| 6218198 | Method and apparatus for evaluating semiconductor film, and method for producing the semiconductor film Reflectance of a p-Si film crystallized by laser annealing is measured, a wavelength dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wavelength of 500 nm. The value is to be an inh... | 04/17/2001 |
| 6210980 | Inspection pattern and method for semiconductor device An inspection pattern for a semiconductor device includes at least one inspection pattern groove and a dummy interconnection. The inspection pattern groove is formed in an interlevel insulating film or lower interconnection covering a surface of a semicon... | 04/03/2001 |
| 6194085 | Optical color tracer identifier in metal paste that bleed to greensheet A coating material used in the fabrication of electronic components such as a metallized paste is provided comprising a material to be coated on the electronic component substrate and an identifying component which identifying component can be identified ... | 02/27/2001 |
| 6187600 | Silicon substrate evaluation method and semiconductor device manufacturing method A surface layer portion of a silicon substrate is etched by using a mixed solution which contains ammonium hydroxide (NH4 OH), hydrogen peroxide (H2 O2) and water (H2 O) at a weight ratio of 1:(1.3 to 2.65):(275... | 02/13/2001 |
| 6153497 | Method for determining a cause for defects in a film deposited on a wafer A method for determining a cause for defect formation in an insulating material layer deposited on an electrically conductive layer on a wafer surface is disclosed. In the method, on top of a semi-conducting wafer which has a first insulating material lay... | 11/28/2000 |
| 6121060 | Method of measuring a concentration profile A method of measuring the two-dimensional dopant concentration profile in a source/drain region included in a semiconductor device is disclosed. A semiconductor substrate is etched by an etchant of the kind etching a semiconductor by an amount dependent o... | 09/19/2000 |
| 6121064 | STI fill for SOI which makes SOI inspectable A method of manufacturing and inspecting SOI such that during STI formation, by depositing a light absorbing layer in the STI such as hydrosilicon oxynitride, the silicon inclusions in the buried insulator layer of the SOI are undetectable by an optical i... | 09/19/2000 |
| 6121156 | Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit Methods for monitoring defects in a process for forming a contact hole, via or trench in a layer of a device in an integrated circuit includes the steps of forming a sacrificial topology on a substrate by duplicating at least a portion of a structure of t... | 09/19/2000 |
| 6107201 | Aluminum spiking inspection method A method for inspection which involves the complete and sequential removal of an aluminum containing metallization layer, and other metal and insulator layers, from the surface of a silicon substrate. The layers are removed through sequential chemical etc... | 08/22/2000 |
