Class 257/E21.513 - Mounting on semiconductor conductive member (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.509. This subclass
No. of patents: 22
Last issue date: 05/20/2008

Number	Title	Issue Date
7374973	Manufacturing method of semiconductor device and manufacturing method of lead frame Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300° C. (preferably 180 to 300° C.) for a total of more than 2 mi...	05/20/2008
7361987	Circuit device with at least partial packaging and method for forming A circuit device (15) is placed within an opening of a conductive layer (10) which is then partially encapsulated with an encapsulant (24) so that the active surface of the circuit device (15) is coplanar with the conductive layer (10	04/22/2008
7259032	Hermetically sealing a package to include a barrier metal A method for manufacturing an electronic device includes the steps of forming a first resist pattern on a primary surface of a SAW element, the first resist pattern having openings at positions corresponding to those at which bumps and a sealing frame are to be form...	08/21/2007
7186588	Method of fabricating a micro-array integrated circuit package A method of fabricating a micro-array IC package is recited. A wafer has a B-stageable adhesive applied, and the wafer is diced. The individual dice are applied to a lead-frame via their adhesive, and wirebonded to associated leads. The lead-frame is then encapsulat...	03/06/2007
6602730	Method for gravitation-assisted control of spread of viscous material applied to a substrate A method of forming high definition elements, such as conductive traces on electronic devices or substrates, from or including viscous material. The method includes inverting the electronic components or substrates after the viscous material is applied an...	08/05/2003
6581279	Method of collectively packaging electronic components Method of collectively packaging a plurality of electronic components formed in a first substrate, wherein the electronic components are separated from one other by separation strips associated with a plurality of conducting tracks formed on a second subs...	06/24/2003
6492713	Gravitationally assisted control of spread of viscous material applied to semiconductor assembly components A method of forming high definition elements for electrical and electronic devices, substrates, and other components from or including viscous material. The method includes inverting the electrical components after the viscous material is applied and main...	12/10/2002
6489681	Gravitationally-assisted control of spread of viscous material applied to semiconductor assembly components A method of forming high definition elements for electrical and electronic devices, substrates, and other components from or including viscous material. The method includes inverting the electrical components after the viscous material is applied and main...	12/03/2002
6156621	Method for fabricating direct wafer bond Si/SiO₂ /Si substrates A method for fabricating direct wafer bond Si/SiO2 /Si substrates in which trenches are etched into a rear side of a device wafer. Subsequently, the rear side of the device wafer is ground. The device wafer is then placed by its front side onto...	12/05/2000
6083768	Gravitationally-assisted control of spread of viscous material applied to semiconductor assembly components A method of forming elements for electrical and electronic devices, substrates, and other components from or including viscous material. The method includes inverting the electrical components after the viscous material is applied and maintaining the inve...	07/04/2000
6066542	Method for the manufacture of a power semiconductor component Component structures of, for example, IGBTs are manufactured on the respective top sides of two substrates, the substrates are thinned proceeding from their respective back sides, and, after polishing, the back sides of the thinned substrates are durably ...	05/23/2000
5877516	Bonding of silicon carbide directly to a semiconductor substrate by using silicon to silicon bonding A module and a method of making the module is disclosed. The module is formed from a semiconductor substrate and a silicon carbide chip for high temperature applications. The module is designed to be compatible with current silicon IC processes....	03/02/1999
5336929	Semiconductor structure and method for fabricating the same A semiconductor structure according to the present invention includes a diffusion preventing layer for preventing a diffusion of a brazing metal layer, for instance, Au/In. The structure is interconnected to another structure by brazing....	08/09/1994
4446478	Assembly in a single case of a main power-switching semiconductor component and a destorage diode In the pressure association of a main component such as a Darlington transistor or an amplifying gate thyristor and a storage diode, a specific destorage diode comprising an annular junction. Thus, transversally to the center of the diode a N+ ...	05/01/1984
4406054	Method of mounting and packaging elongate silicon devices on a ceramic base Mounting silicon devices on a ceramic substrate creates considerable problems when the device has a geometry, such as being very long relative to its width, due to flatness and thermal mismatches. In the present invention a thin silicon substrate is inter...	09/27/1983
4288808	Circuit structures including integrated circuits The specification discloses a structure for locating integrated circuits on a substrate by etching V grooves in a silicon substrate arranged to co-operate with spheroidal connectors on the integrated circuit. Contact pads are located in the V grooves wher...	09/08/1981
4246693	Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a higher order plane index than that of the bonding surface of...	01/27/1981
4179802	Studded chip attachment process A plurality of metal studs are plated on a chip carrier surface in a pattern to match a terminal metal footprint on a chip to be joined. The studs are of sufficient height to permit flux cleaning, if necessary. After the studs are in place, the chip is al...	12/25/1979
4074342	Electrical package for LSI devices and assembly process therefor An electrical package for Large Scale Integrated (LSI) devices includes a carrier having (a) thermal expansion similar to a semiconductor, (b) a standard array of terminal pins (100 or more) and (c) a circuit transposer that is (i) a semiconductor materia...	02/14/1978
4056681	Self-aligning package for integrated circuits A self-aligning integrated circuit package includes an integrated circuit die having raised contact pads mounted to an interconnecting die in flip chip fashion. The interconnecting die is formed of anodizable material and has raised anodized portions that...	11/01/1977
4025942	Low pressure transducers employing large silicon diaphragms having non-critical electrical properties A low pressure transducer and methods of fabricating the same employ piezoresistive bridges deposited on or diffused within a wafer of n-type silicon, the wafer is secured to a glass sheet and is then bonded to a silicon diaphragm of a relatively large si...	05/24/1977
4016644	Methods of fabricating low pressure silicon transducers A low pressure transducer and methods of fabricating the same employ piezoresistive bridges deposited on or diffused within a wafer of n-type silicon, the wafer is secured to a glass sheet and is then bonded to a silicon diaphragm of a relatively large si...	04/12/1977

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Class 257/E21.513 - Mounting on semiconductor conductive member (EPO)