Did You Know...
...that the video game, Pong, was invented by a guy who graduated at the bottom of his engineering class? Nolan Bushnell spent more time running the games at a local amusement park than he did on his studies at the University of Utah. His dreams of working for Disney's amusement empire were dashed when the company wouldn't hire him. Taking a boring job, Nolan daydreamed about electronic versions of popular games. He invented Pong, the first video game, and went on to found Atari Co.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7432593 | Semiconductor package assembly and method for electrically isolating modules A semiconductor package assembly and method for electrically isolating modules, having a capacitor within the semiconductor package assembly. The package assembly and method are suitable for electrically isolating modules according to IEEE 1394. ... | 10/07/2008 |
| 7416973 | Method of increasing the etch selectivity in a contact structure of semiconductor devices By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectiv... | 08/26/2008 |
| 7414299 | Semiconductor package assembly and method for electrically isolating modules A semiconductor package assembly and method for electrically isolating modules, having a capacitor within the semiconductor package assembly. The package assembly and method are suitable for electrically isolating modules according to IEEE 1394. ... | 08/19/2008 |
| 7371680 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device is achieved by forming an interlayer insulating film on a conductive portion formed in a semiconductor substrate which is placed in a chamber. A contact hole is formed to pass through the interlayer insulating film to... | 05/13/2008 |
| 7368373 | Method for manufacturing semiconductor devices and plug A method for manufacturing a semiconductor device is disclosed suitable for a substrate having a first conducting structure and a first dielectric layer, wherein the dielectric layer covers the first conductive structure. The method includes the steps of forming a s... | 05/06/2008 |
| 7285487 | Method and apparatus for network with multilayer metalization A network for interconnecting processing element nodes which supports rich interconnection while having a number of switching elements which is linear in the number of processing elements interconnected. Processing elements connect to the lowest level of the tree an... | 10/23/2007 |
| 7241684 | Method of forming metal wiring of semiconductor device A method for forming a metal wiring of a semiconductor device. The method includes forming an etch stop layer on a semiconductor substrate, forming a first inter metal dielectric on the etch stop layer, and forming a second inter metal dielectric on the first inter ... | 07/10/2007 |
| 7238604 | Forming thin hard mask over air gap or porous dielectric A thin hard mask is formed over a semiconductor substrate. The thin hard mask allows diffusion of a sacrificial material or pore-forming agent therethrough to form an underlying air gap or porous dielectric region. The thin hard mask may be a polymer or an initially... | 07/03/2007 |
| 7217650 | Metallic nanowire interconnections for integrated circuit fabrication A method for fabricating an electrical interconnect between two or more electrical components. A conductive layer is provided on a substarte and a thin, patterned catalyst array is deposited on an exposed surface of the conductive layer. A gas or vapor of a metallic... | 05/15/2007 |
| 6613667 | Forming an interconnect of a semiconductor device Forming an interconnect of a semiconductor device includes defining a recessed structure proximate to an outer surface of a substrate of a semiconductor device. A metal layer is deposited within the recessed structure. A region of the metal layer is expos... | 09/02/2003 |
| 5587609 | II-VI group compound semiconductor device metallic nitride ohmic contact for p-type A II-VI group compound semiconductor device having a p-type Znx Mg1-x Sy Se1-y (0ࣘxࣘ1, 0ࣘyࣘ1) semiconductor layer, on which an electrode layer is formed with at least metallic nitride layer lying between... | 12/24/1996 |
