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| Number | Title | Issue Date |
| 7427570 | Porous organosilicate layers, and vapor deposition systems and methods for preparing same The present invention provides porous organosilicate layers, and vapor deposition systems and methods for preparing such layers on substrates. The porous organosilicate layers are useful, for example, as masks. ... | 09/23/2008 |
| 7312138 | Semiconductor device and method of manufacture thereof A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode i... | 12/25/2007 |
| 7303962 | Fabricating method of CMOS and MOS device A complementary metal-oxide-semiconductor (CMOS) device comprising a substrate, a first type of metal-oxide-semiconductor (MOS) transistor, a second type of MOS transistor, an etching stop layer, a first stress layer and a second stress layer is provided. The substr... | 12/04/2007 |
| 7288424 | Integrated driver process flow An integrated device includes one or more device drivers and a micro-electro-mechanical system (MEMS) structure monolithically coupled to the one or more device drivers. The one or more device drivers are configured to process received control signals and to transmi... | 10/30/2007 |
| 7259109 | Electrospray and enhanced electrospray deposition of thin films on semiconductor substrates A method of forming a thin film on a substrate to fabricate a microelectronic device, a microelectronic device comprising a thin film deposited according to the method, and a system comprising the microelectronic device. The thin film may include on of a low k thin ... | 08/21/2007 |
| 7238628 | Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention i... | 07/03/2007 |
| 5747389 | Crack resistant passivation layer A method for making a device and the device itself which utilizes a passivation layer displaying improved crack resistance is disclosed. This is accomplished through the incorporation of boron into a PSG passivation layer. The temperature of the passivati... | 05/05/1998 |
| 5599733 | Method using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfaces A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to supp... | 02/04/1997 |
| 4524378 | Anodizable metallic contacts to mercury cadmium telleride Metallic contacts to compound semiconductor devices which employ a native oxide for passivation are provided. The metallic contacts of the invention comprise at least two metal layers: a first layer making non-rectifying contact with the semiconductor sur... | 06/18/1985 |
