Class 257/E21.485 - Chemical or electrical treatment, e.g., electrolytic etching (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.483. This subclass
No. of patents: 81
Last issue date: 10/21/2008

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Number	Title	Issue Date
7439189	Surface treatment after selective etching The invention concerns a method of treating wafers comprising at least one surface layer of silicon-germanium (SiGe) and a layer of strained silicon beneath the SiGe layer. The strained silicon layer is denuded by a step of selective etching of the SiGe layer by dis...	10/21/2008
7402530	Method for manufacturing semiconductor device and semiconductor device A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film...	07/22/2008
7297994	Semiconductor device having a retrograde dopant profile in a channel region An epitaxially grown channel layer is provided on a well structure after ion implantation steps and heat treatment steps are performed to establish a required dopant profile in the well structure. The channel layer may be undoped or slightly doped, as required, so t...	11/20/2007
6524966	Surface treatment and protection method for cadmium zinc telluride crystals A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process ...	02/25/2003
6127273	Process for anisotropic plasma etching of different substrates A method of producing etched structures in substrates by anisotropic plasma etching, wherein an essentially isotropic etching operation and side wall passivation are performed separately and in alternation, with the substrate being a polymer, a metal or a...	10/03/2000
6058123	Selective etch for II-VI semiconductors A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one o...	05/02/2000
6043106	Method for surface passivation and protection of cadmium zinc telluride crystals A method for reducing the leakage current in CZT crystals, particularly Cd1-x Znx Te crystals (where x is greater than equal to zero and less than or equal to 0.5), and preferably Cd0.9 Zn0.1 Te crystals, thereb...	03/28/2000
6043113	Method of forming self-aligned thin film transistor During the formation of a self-aligned thin film transistor (50), the semiconductor material channel layer (58) on the gate insulating layer (56) has a passivation shield (PS) applied to it aligned with the gate electrode (54). The channel laye...	03/28/2000
5933706	Method for surface treatment of a cadmium zinc telluride crystal A method for treatment of the surface of a CdZnTe (CZT) crystal that reduces surface roughness (increases surface planarity) and provides an oxide coating to reduce surface leakage currents and thereby, improve resolution. A two step process is disclosed,...	08/03/1999
5888410	Dry etching method and manufacturing method of manufacturing EL element using same A dry etching method performing dry etching of a material containing zinc forms and patterns a resist on the material to be etched, and etches the material using an etching gas which is a mixed gas of methane gas and an inert gas. A dry etching method tha...	03/30/1999
5882988	Semiconductor chip-making without scribing A method for fracturing semiconductor crystal wafers or bars to form individual chips with active devices without the use of mechanical scribing of the crystal. The method involves forming where fracture is desired a shallow trench by etching in the semic...	03/16/1999
5834330	Selective etch method for II-VI semiconductors A II-VI semiconductor device is fabricated using a selective etchant in the form of aqueous solution of HX where X is Cl or Br. The II-VI semiconductor device is composed of a number of layers. Selective etching can be enabled by introducing Mg into one o...	11/10/1998
5762813	Method for fabricating semiconductor device By using first mixed gas containing carbon atoms and fluorine atoms, a semiconductor substrate is etched. In order to remove a damage layer formed on the surface of the semiconductor substrate by this etching processing, the semiconductor substrate is etc...	06/09/1998
5733801	Method of making a semiconductor device with alignment marks A first trench is formed in an element-separating region on the surface of a semiconductor substrate, and a second trench is formed in an alignment mark region thereof. When a first insulating substance is deposited on the substrate surface so as to bury ...	03/31/1998
5674779	Method for fabricating a ridge-shaped laser in a channel A method for manufacturing a ridge in a channel laser diode in II-VI materials by etching grooves to form an active mesa flanked by support mesas. The method involves using certain etchants for certain compositions of the II-VI layers so that the grooves ...	10/07/1997
5647954	Manufacture of etched substrates such as infrared detectors A narrow and deep aperture is chemically etched in or through a body of, for example, cadmium mercury telluride or other infrared sensitive material. The etchant is constrained and etches faster adjacent to side walls of a mask on the body. Those side wal...	07/15/1997
5637189	Dry etch process control using electrically biased stop junctions A dry etch process for etching a semiconductor substrate having a p-n heterojunction formed by contact between a p-layer and a n-layer requires application of a reverse bias voltage of less than a p-n breakdown voltage across the p-n heterojunction. A pla...	06/10/1997
5607601	Method for patterning and etching film layers of semiconductor devices In a laser assisted semiconductor etching process, a krypton fluoride excimer laser operating at 248 nm excites a carbonyl dichloride COCl2 radical precursor gas which decomposes into carbon monoxide and also atomic chlorine that bonds to laser...	03/04/1997
5569932	Porous silicon carbide (SIC) semiconductor device Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in t...	10/29/1996
5559058	Method for producing native oxides on compound semiconductors A method of growing a native oxide on a compound semiconductor material, comprising contacting the compound semiconductor material with an oxygen containing fluid, and pulsing a current between the compound semiconductor material the fluid, is presented. ...	09/24/1996
5557146	Ohmic contact using binder paste with semiconductor material dispersed therein An ohmically conductive contact for a thin film p-type semiconductor compound formed of at least one of the metal elements of Class IIB of the Periodic Table of Elements and at least one of the non-metal elements of Class VIA of the Periodic Table of Elem...	09/17/1996
5534109	Method for etching HgCdTe substrate A method for etching an HgCdTe substrate selectively by dry etching. A substrate is selectively etched without damaging the substrate during a simple process in which the higher selectivity of an HgCdTe substrate versus a resist mask is obtainable. Remova...	07/09/1996
5475237	Light emitting device having first and second cladding layers with an active layer and carrier blocking layer therebetween A light emitting device is formed of a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, and a second cladding layer on the active layer. A carrier blocking layer also serving as an etching stopping layer dur...	12/12/1995
5454915	Method of fabricating porous silicon carbide (SiC) Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in t...	10/03/1995
5445706	Wet treatment adapted for mirror etching ZnSe Group II-VI compound semiconductor crystal containing Zn as group II element or mixed crystal containing the compound semiconductor crystal is etched by an etchant made of H2 SO4 aqueous solution dissolved with potassium permanganate...	08/29/1995
5423943	Selective etching method, optoelectronic device and its fabricating method When a ZnSe, ZnTe or ZnSSe or Zn1-a Mga Sb Se1-b (0	06/13/1995
5420446	Optoelectronic semiconductor laser device having compound semiconductor first and second layers When a ZnSe, ZnTe or ZnSSe or Zn1-a Mga Sb Se1-b (0	05/30/1995
5396862	Method of manufacturing a compound semiconductor A compound semiconductor thin film is grown on a compound semiconductor surface, which is cleaned by irradiating the surface with gas containing at least hydrogen molecules and by efficiently removing contaminant on the surface at low temperature. A beam ...	03/14/1995
5385651	Digital electrochemical etching of compound semiconductors A method for the digital electrochemical etching of compound semiconductors in an electrochemical flow cell system in which alternating electrochemical potentials are applied between a reference electrode and the compound semiconductor sufficient to strip...	01/31/1995
5376241	Fabricating porous silicon carbide The formation of porous SiC occurs under electrochemical anodization. A sample of SiC is contacted electrically with nickel and placed into an electrochemical cell which cell includes a counter electrode and a reference electrode. The sample is encapsulat...	12/27/1994
5366934	Method for sulfide surface passivation A purely chemical method for forming a layer of insoluble sulfides on semiconductor surfaces in order to passivate their surfaces and more particularly to a method of forming a layer of insoluble sulfides on a HgCdTe device surface....	11/22/1994
5318666	Method for via formation and type conversion in group II and group VI materials A method of forming an n-p junction in a body (44, 44a, 44b) formed of Group II and Group VI elements. The body (44, 44a, 44b) initially is of p-type conductivity characteristic, and a dry reactive etching process is employed for forming a via (60, 60a, 6...	06/07/1994
5298767	Porous silicon carbide (SiC) semiconductor device A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodime...	03/29/1994
5248385	Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers The invention is a method for growing homoepitaxial films of SiC on low-tilt-angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive meth...	09/28/1993
5236537	Plasma etching apparatus A microwave ECR plasma etching apparatus having a plasma generating chamber coupled to a separate treatment chamber for supporting a Group II-VI sample to be dry etched, are tailored for the dry etching of Group II-VI compound semiconductors resulting in ...	08/17/1993
5215929	Method of manufacturing pn-junction device II-VI compound semiconductor This invention relates to a pn-junction device, especially a blue light-emitting diode and a method of the manufacturing thereof. The pn-junction is formed between a superlattice region and a n-type semiconductor region, the superlattice region consisting...	06/01/1993
5194119	Method of anisotropic dry etching of thin film semiconductors A microwave ECR plasma etching method and apparatus employs a combination reactive gas medium supplied to a microwave excitation ECR plasma chamber coupled to a treatment chamber containing a Group II-VI sample to be etched. A reactive gas plasma is forme...	03/16/1993
5157000	Method for dry etching openings in integrated circuit layers A process is disclosed through which vias (50) can be formed by the reaction of an etchant species (52) with a mercury cadmium telluride (HgCdTe) or zinc sulfide (ZnS) layer (42). The activating gases (20) are preferably a hydrogen gas or a methane gas wh...	10/20/1992
5151135	Method for cleaning surfaces using UV lasers The invention relates to a new method for cleaning chemical, metallic and particulate contaminants from solid surfaces. The new method comprises irradiating the surface with essentially ultraviolet laser radiation whose parameters are selected to avoid ca...	09/29/1992
5145554	Method of anisotropic dry etching of thin film semiconductors A microwave ECR plasma etching method and apparatus, including a plasma generating chamber coupled to a separate treatment chamber for supporting a Group II-VI sample to be dry etched, are tailored for the dry etching of Group II-VI compound semiconductor...	09/08/1992

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Class 257/E21.485 - Chemical or electrical treatment, e.g., electrolytic etching (EPO)