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Vehicular Impact Signaling Device
An apparatus for the deployment of a visible plume to alert other motorists that a proximate motor vehicle has been involved in a collision.
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| Number | Title | Issue Date |
| 7416975 | Method of forming contact layers on substrates A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined re... | 08/26/2008 |
| 7358183 | Method for manufacturing wiring and method for manufacturing semiconductor device The present invention provides a method for manufacturing a wiring and a method for manufacturing a semiconductor device, which do not require a photolithography step in connecting a pattern of an upper layer and a pattern of a lower layer. According to the present ... | 04/15/2008 |
| 7332432 | Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a do... | 02/19/2008 |
| 7306962 | Electroformed metallization A method is provided for electroforming metal integrated circuit structures. The method comprises: forming an opening such as a via or line through an interlevel insulator, exposing a substrate surface; forming a base layer overlying the interlevel insulator and sub... | 12/11/2007 |
| 7259095 | Semiconductor device and manufacturing process therefor as well as plating solution A semiconductor device of improved stress-migration resistance and reliability includes an insulating film having formed therein a lower interconnection consisting of a barrier metal film and a copper-silver alloy film, on which is then formed an interlayer insulati... | 08/21/2007 |
| 7208401 | Method for forming a thin film Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film are described. ... | 04/24/2007 |
| 7169195 | Capacitor, circuit board with built-in capacitor and method of manufacturing the same In a capacitor 10, a first electrode 21, a dielectric layer 23, a solid electrolytic layer 50 and a second electrode 31 are provided. In a manufacturing process, the dielectric layer 23 and a first solid electrolytic layer | 01/30/2007 |
| 7141492 | Method for forming thin-film, apparatus for forming thin-film, method for manufacturing semiconductor device, electro-optical unit, and electronic apparatus The invention provides a method of forming a high-performance thin-film at low cost using a liquid material in safety, an apparatus to form a thin-film, a method of manufacturing a semiconductor device, an electro-optical unit, and an electronic apparatus. An... | 11/28/2006 |
| 5512511 | Process for growing HgCdTe base and contact layer in one operation A method for fabricating a two layer epitaxial structure by a liquid phase epitaxy (LPE) process, the structure being comprised of a Group II-VI semiconductor material. The method includes the steps of providing an LPE growth chamber that contains a molte... | 04/30/1996 |
| 5472910 | Process for making OHMIC contacts and photovoltaic cell with ohmic contact Ohmic contacts to p-type IIB/VIB semiconductor are obtained by a process which includes the step of depositing a viscous liquid containing a Group IB metal salt on a surface of a semiconductor, substantially free of oxide groups, heating to form a dried l... | 12/05/1995 |
| 5399524 | Method of providing an ohmic type contact on p-type Zn(S)Se A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200° C. for more than two hours.... | 03/21/1995 |
| 5293074 | Ohmic contact to p-type ZnSe A semiconductor structure with a p-type ZnSe layer has an improved ohmic contact consisting of a layer of Hgx Zn1-x Tea Seb Sc where x=0-1 with x being 0 at the surface of the ZnSe layer and increasing thereafte... | 03/08/1994 |
| 4680611 | Multilayer ohmic contact for p-type semiconductor and method of making same Novel ohmic contacts are provided for p-type semiconductor compounds comprising at least one of the metals of Class IIB of the Periodic Table of Elements and one of the non-metal elements of Class VIA of the Periodic Table of Elements, as well as a method... | 07/14/1987 |
| 4666569 | Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor A method of making an ohmic content to a thin film of a II-VI compound semiconductor. The contact is made by etching the film with an acidic solution and thereafter treating the etched surface with an alkaline solution. A layer of copper 5 to 50 angstroms... | 05/19/1987 |
| 4542074 | Surface metallized semiconductors The firmly adhesive metallization, in particular partial metallization, of the surface of semiconductors is possible, without pickling, by carrying out the activation with organometallic compounds of metals of the I and VIII Secondary Groups of the Period... | 09/17/1985 |
| 4472458 | Process for the production of metallized semiconductors The firmly adhesive metallization, in particular partial metallization, of the surface of semiconductors is possible, without pickling, by carrying out the activation with organometallic compounds of metals of the IB and VIIIB Groups of the Periodic Table... | 09/18/1984 |
| 4085500 | Ohmic contacts to p-type mercury cadmium telluride Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding ma... | 04/25/1978 |
| 4000508 | Ohmic contacts to p-type mercury cadmium telluride Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding ma... | 12/28/1976 |
