Class 257/E21.478 - From gas or vapor, e.g., condensation (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.477. This subclass
No. of patents: 30
Last issue date: 04/08/2008

Number	Title	Issue Date
7354872	Hi-K dielectric layer deposition methods Methods of forming a high dielectric constant dielectric layer are disclosed including providing a process chamber including a holder for supporting a substrate, introducing a first gas comprising a high dielectric constant (Hi-K) dielectric precursor and an oxygen ...	04/08/2008
7294574	Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed depos...	11/13/2007
7253123	Method for producing gate stack sidewall spacers A method for forming sidewall spacers on a gate stack by depositing one or more layers of silicon containing materials using PECVD process(es) on a gate structure to produce a spacer having an overall k value of about 3.0 to about 5.0. The silicon containing materia...	08/07/2007
7115534	Dielectric materials to prevent photoresist poisoning Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric laye...	10/03/2006
6673641	Contact structure for an electric II/VI semiconductor component and a method for the production of the same A process for the production of contacts for electrically operated II/VI semiconductor structures (for example laser diodes). The contact materials palladium and gold hitherto used in relation to electrically operated II/VI semiconductor lasers are distin...	01/06/2004
5994163	Method of manufacturing thin-film solar cells A method of manufacturing thin-film solar cells that include a layer of copper indium selenide (CuInSe2) that is applied in one manufacturing step onto a substrate that includes a metal layer that defines an electrical back contact layer of the...	11/30/1999
5879962	III-V/II-VI Semiconductor interface fabrication method A method for repeatably fabricating GaAs/ZnSe and other III-V/II-VI semiconductor interfaces with relatively low stacking fault densities in II-VI semiconductor devices such as laser diodes. The method includes providing a molecular beam epitaxy (MBE) sys...	03/09/1999
5818072	Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc mercury selenide (Znx Hg1-x Se) layer on the zinc selenide layer, a mercury selenide (HgSe) layer on the zinc mercury sele...	10/06/1998
5457330	Tin and/or lead contacts to P-type HgCdTe An adhesive ohmic contact made to a p-type semiconductor metal substrate or layer (10) comprises tin. The contact preferably includes a tin film (24) approximately 2000 Å in thickness. The p-type semiconductor compound contains mercury and, while describ...	10/10/1995
5401986	Bake-stable HgCdTe photodetector with II-VI passivation layer A photoresponsive device wherein the device includes semiconductor material, such as a cap region (14a), comprised of elements selected from Group IIB-VIA. A molybdenum contact pad (16) is formed upon a surface of the cap region, and a molybdenum ground c...	03/28/1995
5373175	Ohmic electrode and a light emitting device An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer made of Pd or an alloy containing Pd; and a metal layer provided thereon. The fabricating method of an ohmic electro...	12/13/1994
5366927	Method of fabricating epitaxially deposited ohmic contacts using group II-V I An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc telluride selenide (ZnTex Se1-x) layer on the zinc selenide layer, a mercury selenide (HgSe) layer on the zinc telluride s...	11/22/1994
5351255	Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same An inverted integrated heterostructure includes an optical emission heterostructure formed of Group II-VI compound semiconductor materials having first and second opposing faces and including a layer of p-type zinc selenide or an alloy thereof at the firs...	09/27/1994
5296384	Bake-stable HgCdTe photodetector and method for fabricating same A photoresponsive device and a method of fabricating same, wherein the device includes semiconductor material, such as a cap region (14a), comprised of elements selected from Group IIB-VIA. A molybdenum contact pad (16) is formed upon a surface of the cap...	03/22/1994
5229324	Method for forming contacts to p-type HgCdTe semiconductor material using lead and tin A method for making an adhesive ohmic contact to a p-type semiconductor metal substrate or layer (10) comprises tin and lead. The contact preferably includes a tin/lead film (24) approximately 2000 Å in thickness. The p-type semiconductor compound contai...	07/20/1993
4818565	Method to stabilize metal contacts on mercury-cadmium-telluride alloys A method of stabilizing metal contacts on a body of a mercury-cadmium-telluride alloy comprising depositing a layer of a rare earth element such as samarium or ytterbium on the surface of the alloy prior to depositing an overlayer of a contact metal such ...	04/04/1989
4801990	HgCdTe avalanche photodiode An HgCdTe avalanche photodiode for use at ambient temperature comprises an Hg1-x Cdx Te crystal substrate in which x is chosen between substantially 0.35 and substantially 0.5, a PN junction is formed in the substrate with low concen...	01/31/1989
4735662	Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors A stable ohmic contact for thin films of p-type tellurium-containing II-VI semiconductors and photovoltaic devices incorporating such contacts. An ohmic contact according to the invention includes a contact-forming layer deposited on a p-type thin film of...	04/05/1988
4734381	Method of making a thin film cadmium telluride solar cell A phosphorous doped layer of cadmium telluride is deposited onto a conductive window layer to form a thin film cadmium telluride solar cell. Back contacts to the solar cell are made by first depositing a layer of p conductivity type lead telluride upon th...	03/29/1988
4680611	Multilayer ohmic contact for p-type semiconductor and method of making same Novel ohmic contacts are provided for p-type semiconductor compounds comprising at least one of the metals of Class IIB of the Periodic Table of Elements and one of the non-metal elements of Class VIA of the Periodic Table of Elements, as well as a method...	07/14/1987
4666569	Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor A method of making an ohmic content to a thin film of a II-VI compound semiconductor. The contact is made by etching the film with an acidic solution and thereafter treating the etched surface with an alkaline solution. A layer of copper 5 to 50 angstroms...	05/19/1987
4650921	Thin film cadmium telluride solar cell A phosphorous doped layer of cadmium telluride is deposited onto a conductive window layer to form a thin film cadmium telluride solar cell. Back contacts to the solar cell are made by first depositing a layer of p conductivity type lead telluride upon th...	03/17/1987
4650984	Photosensor array for treating image information A photosensor array comprises a substrate, a photoconductive layer and electrode layers between which the photoconductive layer is provided, wherein an opaque electroconductive layer is provided at a side opposite to a side to which a signal light is proj...	03/17/1987
4524378	Anodizable metallic contacts to mercury cadmium telleride Metallic contacts to compound semiconductor devices which employ a native oxide for passivation are provided. The metallic contacts of the invention comprise at least two metal layers: a first layer making non-rectifying contact with the semiconductor sur...	06/18/1985
4489102	Radiation-stimulated deposition of aluminum A method for depositing aluminum films on a substrate comprises exposing the substrate to vapors of an aluminum hydride-trialkylamine complex and exposing the surface to ultraviolet light in the areas where aluminum deposition is desired....	12/18/1984
4456630	Method of forming ohmic contacts A method of forming ohmic contacts with thin film p-type semiconductor Class II B - VI A compounds comprising etching the film surface with an acidic solution, then etching with a strong basic solution and finally depositing a conductive metal layer....	06/26/1984
4439912	Infrared detector and method of making same A mercury-cadmium-telluride (HgCdTe) epitaxial detector array is formed on a cadmium telluride (CdTe) substrate. Connecting leads to the detectors are a molybdenum layer covered by a gold-germanium layer. These leads have excellent matches for the thermal...	04/03/1984
4319069	Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation There are disclosed a semiconductor device comprising a layer of polycrystalline p-type CdTe and a variety of metals in low-resistance contact, and a process and preferred etchant for obtaining the contact. A layer comprising tellurium is provided between...	03/09/1982
4123295	Mercury chalcogenide contact for semiconductor devices An improved contact material for use in the fabrication of semiconductor devices is provided. This material comprises one of the mercury chalcogenides. The application of this material to a nondegenerate semiconductor may be made by the process of evapora...	10/31/1978
3983264	Metal-semiconductor ohmic contacts and methods of fabrication Ohmic contacts to semiconductor surfaces are fabricated by a process which includes the formation of an adherent, uniform insulating film at the interface between the semiconductor surface and the metallization layer. The insulating film contains stationa...	09/28/1976

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Class 257/E21.478 - From gas or vapor, e.g., condensation (EPO)