Quotables
"It is my heart-warmed and world-embracing Christmas hope and aspiration that all of us, the high, the low, the rich, the poor, the admired, the despised, the loved, the hated, the civilized, the savage (every man and brother of us all throughout the whole earth), may eventually be gathered together in a heaven of everlasting rest and peace and bliss, except the inventor of the telephone. "
Mark Twain ; Christmas greetings, 1890
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| Number | Title | Issue Date |
| 7390711 | MOS transistor and manufacturing method thereof A MOS transistor including a gate insulation layer and a gate electrode layer on a channel region of a semiconductor substrate. A gate spacer layer is formed on a sidewall of the electrode layer and the insulation layer. The transistor includes a deep extended sourc... | 06/24/2008 |
| 7314804 | Plasma implantation of impurities in junction region recesses A transistor device having a conformal depth of impurities implanted by isotropic ion implantation into etched junction recesses. For example, a conformal depth of arsenic impurities and/or carbon impurities may be implanted by plasma immersion ion implantation in j... | 01/01/2008 |
| 7214614 | System for controlling metal formation processes using ion implantation The present invention is generally directed to various methods of using ion implantation techniques to control various metal formation processes. In one illustrative embodiment, the method comprises forming a metal seed layer above a patterned layer of insulating ma... | 05/08/2007 |
| 6664172 | Method of forming a MOS transistor with improved threshold voltage stability The gate for at least one transistor is formed on the surface of the semiconductor substrate and the gate is utilized as a mask to form a lightly doped drain of the transistor. A low thermal budget deposition process is performed to form a silicon nitride... | 12/16/2003 |
| 5234842 | Method of producing p-typed CdS A method of producing a p-type CdS wherein oxygen is doped into a CdS layer at a concentration in a range between 1016 and 1019 atomic/cm3.... | 08/10/1993 |
| 4952446 | Ultra-thin semiconductor membranes This invention relates to ultra-thin semiconductor films which can be in the submicron range formed from semiconductor materials such as silicon, germanium and gallium arsenide. The films are formed by creating a thin slightly damaged surface on the polis... | 08/28/1990 |
| 4801990 | HgCdTe avalanche photodiode An HgCdTe avalanche photodiode for use at ambient temperature comprises an Hg1-x Cdx Te crystal substrate in which x is chosen between substantially 0.35 and substantially 0.5, a PN junction is formed in the substrate with low concen... | 01/31/1989 |
| 4766084 | Process for the production of an electric contact on a HgCdTe substrate with a P conductivity and application to the production of an N/P diode The invention relates to a process for producing an electric contact on a HgCdTe substrate having a P conductivity and application to the production of an N/P diode. For producing an N/P diode, an insulating layer deposited on the HgCdTe substrate is etch... | 08/23/1988 |
| 4668306 | Method of manufacturing a semiconductor device having unhomogeneous distribution of impurity concentration A semiconductor device having an uneven distribution of impurity concentration is manufactured easily and with good reproducibility from a wafer of a Group III-V or Group II-VI compound semiconductor by first forming a thin layer of impurity in a desired ... | 05/26/1987 |
| 4422090 | Thin film transistors A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The ... | 12/20/1983 |
| 4371882 | Process for preparing isolated junctions in thin-film semiconductors A controlled environment process for making diode arrays by depositing the sublimate of a semiconductor material through an aperture of a mask placed nearby a substrate and then subjecting part of the sublimate to ion implantation. The aperture causes dif... | 02/01/1983 |
| 4330932 | Process for preparing isolated junctions in thin-film semiconductors utilizing shadow masked deposition to form graded-side mesas A controlled environment process for making diode arrays by depositing the sublimate of a semiconductor material through an aperture of a mask placed nearby a substrate and then subjecting part of the sublimate to ion implantation. The aperture causes dif... | 05/25/1982 |
| 4206003 | Method of forming a mercury cadmium telluride photodiode A mercury cadmium telluride photodiode includes an n-type mercury cadmium telluride body with an accumulation layer proximate a first surface of the body. A p-type region is formed in the body at the first surface so that the n-type accumulation layer sur... | 06/03/1980 |
| 4197633 | Hybrid mosaic IR/CCD focal plane A hybrid mosaic IR/CCD focal plane structure has high detector element packing densities which may be achieved using cost effective planar processing technology. The focal plane structure preferably includes an insulator layer over a silicon substrate whi... | 04/15/1980 |
| 4004342 | Fabrication of ion implanted P-N junction devices Light emitters and photovoltaic detectors are fabricated by ion implantation of cadmium, zinc, bromine or chlorine ions into a p-type CuInSe2 substrate so as to form a p-n semiconductor junction.... | 01/25/1977 |
| 4003759 | Ion implantation of gold in mercury cadmium telluride PN junctions in mercury cadmium telluride are formed by implantation of gold ions and a subsequent low temperature--short duration heat treatment.... | 01/18/1977 |
