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| Number | Title | Issue Date |
| 7435692 | Gas jet reduction of iso-dense field thickness bias for gapfill process A system and method affecting mass transport to reduce or eliminate iso-dense bias in spin-on-dielectric (SOD) or spin-on-glass (SOG) processes use a nozzle to dispense the liquid dielectric and a separate nozzle for jetting N2 or other gas onto a semicon... | 10/14/2008 |
| 7387903 | Method for manufacturing layer pattern, method for manufacturing wiring, and method for manufacturing electronic equipment Aspects of the invention provide a manufacturing method enabling a fine layer pattern to form it precisely and stably. An exemplary method for manufacturing a layer pattern can include a step (a) of forming a region defined by a first layer and a second layer on a s... | 06/17/2008 |
| 7320936 | Plating of multi-layer structures An insulating layer (5) and a conductive seed layer (6) are applied to a substrate (1) in a simple process. A photo resist with palladium chloride are provided in a bath for electrophoretic deposition onto the substrate. The photo resist is an i... | 01/22/2008 |
| 6537845 | Chemical surface deposition of ultra-thin semiconductors A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group ... | 03/25/2003 |
| 6126740 | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the m... | 10/03/2000 |
| 5711803 | Preparation of a semiconductor thin film A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simult... | 01/27/1998 |
| 5559057 | Method for depositing and patterning thin films formed by fusing nanocrystalline precursors Patterns or circuits of semiconductors or metals are produced with dimensions at least as small as 7 nm using nanocrystalline precursors. The substrate is masked with an electron beam sensitive layer and a pattern is traced using a focused electron beam. ... | 09/24/1996 |
| 5478445 | Electrochemical process Improved electrolytic deposition of semiconductors is obtained by separating the anode from the cathode by an ion-exchange membrane. The process is useful in the deposition of IIB/VIB semiconductors in the fabrication of photovoltaic cells.... | 12/26/1995 |
| 5264190 | Liquid phase epitaxial film growth apparatus An apparatus for liquid phase epitaxial film growth includes a mother boat for supporting a substrate, a melt boat slidable on the mother boat for containing a melt and selectively bringing the substrate and the melt into contact, and a lid for opening an... | 11/23/1993 |
| 5262357 | Low temperature thin films formed from nanocrystal precursors Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000° K below their bulk melting point. This ... | 11/16/1993 |
| 5215631 | Electrolytic preparation of tin, other metals, alloys and compounds Electrolytic processes for the growth of crystalline tin or other elemental crystals, with or without the use of a substrate. Exemplified cubic forms of alpha-tin and tetragonal forms of beta-tin are grown using a shaped anode and a pointed cathode to pro... | 06/01/1993 |
| 5202290 | Process for manufacture of quantum dot and quantum wire semiconductors Quantum dot and quantum wire semiconductors in the nanosize range are produced by a process which utilizes a microporous aluminum oxide surface layer on an aluminum metal substrate as a template for the semiconducting material. The microporous surface lay... | 04/13/1993 |
| 5192419 | Method for producing a zinc selenide blue light emitting device A p-type ZnSe bulk or film crystal of good quality has not been produced so far, although various improved methods based on MOCVD or MBE methods have been tried. Prior art required high pressure, high temperature or high vacuum to grow a p-type ZnSe cryst... | 03/09/1993 |
| 5134091 | Quantum effective device and process for its production A quantum effective device and its method of manufacture are disclosed, wherein said device comprises quantum well boxes composes of a semiconductor substrate and a compound semiconductor on the surface of the semiconductor substrate at least comprising a... | 07/28/1992 |
| 5130270 | Hetero-epitaxial liquid phase growth method A hetero-epitaxial liquid phase growth method for growing a compound semiconductor by liquid phase epitaxy includes placing a melt in a closed melt boat on a substrate and epitaxially growing a first thin film, opening the melt boat while the melt remains... | 07/14/1992 |
| 5112410 | Cadmium zinc sulfide by solution growth A process for depositing thin layers of a II-VI compound cadmium zinc sulfide (CdZnS) by an aqueous solution growth technique with quality suitable for high efficiency photovoltaic or other devices which can benefit from the band edge shift resulting from... | 05/12/1992 |
| 4920067 | Process for II-VI compound epitaxy Hg1-x Cdx Te, Hg1-x Znx Te and other related II-VI ternary semiconductor compounds are important strategic materials for photovoltaic infrared detector applications. Liquid phase epitaxy employing a tellurium-ri... | 04/24/1990 |
| 4909857 | Electrodeposited doped II-VI semiconductor films and devices incorporating such films A method of electrodepositing a doped compound semiconductor film including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercu... | 03/20/1990 |
| 4826579 | Electrolytic preparation of tin and other metals Electrolytic processes for the growth of single crystal tin or other elemental crystals, with or without the use of a substrate. Exemplified cubic forms of alpha-tin and tetragonal forms of beta-tin are grown using a shaped anode and a pointed cathode to ... | 05/02/1989 |
| 4819058 | Semiconductor device having a pn junction A method of manufacturing a semiconductor device by the use of a Group II-VI compound semiconductor crystal prepared by liquid growth method using a temperature difference technique under controlled vapor pressure of the crystal-constituting Group VI elem... | 04/04/1989 |
| 4816120 | Electrodeposited doped II-VI semiconductor films and devices incorporating such films A method of electrodepositing a doped compound semiconductor film including tellurium and a metal selected from Group IIB of the Period Table of Elements by adding an effective concentration of dopant ions to the electrolyte bath. Cadmium telluride, mercu... | 03/28/1989 |
| 4689246 | Method of fabricating a PbS-PbSe IR detector array A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with l... | 08/25/1987 |
| 4685979 | Method of manufacturing a group II-VI compound semiconductor device having a pn junction A method of manufacturing a semiconductor device having a single crystal pn junction formed in a Group II-VI compound semiconductor crystal, by: growing a Group II-VI compound semiconductor crystal substrate of n type from a melt of a crystal-constituting... | 08/11/1987 |
| 4675207 | Process and apparatus for the deposition on a substrate of a thin film of a compound containing at least one cationic constituent and at least one anionic constituent The invention relates to a process for the depositing on a substrate a thin film or layer of a compound having at least one cationic constituent C and at least one anionic constituent A, such as zinc sulphide. On the substrate are formed at least two superimpo... | 06/23/1987 |
| 4642140 | Process for producing chalcogenide semiconductors A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the la... | 02/10/1987 |
| 4632736 | Electrolytic preparation of tin Electrolytic processes for the growth of single crystal tin or other elemental or compound cystals, with or without the use of a substrate. Cubic forms of alpha-tin and tetragonal forms of beta-tin are grown using a shaped anode and a pointed cathode to p... | 12/30/1986 |
| 4629820 | Thin film heterojunction photovoltaic devices Thin films of Hg1-x Cdx Te with controlled x greater than 0.5 are cathodically deposited on a thin CdS film over a conductive film of ITO deposited on a glass substrate. Depositing a conductive film on the electrodeposited Hg1-x... | 12/16/1986 |
| 4619718 | Method of manufacturing a Group II-VI semiconductor device having a PN junction A method of manufacturing a semiconductor device by the use of a Group II-VI compound semiconductor crystal prepared by liquid growth method using a temperature difference technique under controlled vapor pressure of the crystal-constituting Group VI elem... | 10/28/1986 |
| 4602158 | PbS-PbSe IR detector arrays A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with l... | 07/22/1986 |
| 4581108 | Process of forming a compound semiconductive material A process of forming a compound semiconductive material having a plurality of constituent elements comprising electrodepositing a plurality of such constituent elements and subsequently heating the deposits to produce the desired semiconductive material.... | 04/08/1986 |
| 4548681 | Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te Thin films of Hg1-x Cdx Te with controlled x greater than 0.5 are cathodically deposited on a thin CdS film over a conductive film of ITO deposited on a glass substrate. Depositing a conductive film on the electrodeposited Hg1-x... | 10/22/1985 |
| 4536260 | Thin film cadmium selenide electrodeposited from selenosulphite solution A process for electrodepositing a thin layer of cadmium selenide on a suitable substrate is disclosed. The substrate is immersed in an electrolyte bath with pH ranging from 5 to 10 and having an aqueous solution of selenosulphite ions and cadmium ions com... | 08/20/1985 |
| 4526632 | Method of fabricating a semiconductor pn junction A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in a Group IIB-VIB compound semiconductor crystal obtained b... | 07/02/1985 |
| 4465565 | CdTe passivation of HgCdTe by electrochemical deposition A thin passivating layer (14) of CdTe is formed on a layer of photoconductive HgCdTe (4) by means of electrochemical deposition. The photoconductive layer (4) is used as a cathode. A first anode (26) is fabricated of tellurium and a second anode (28) is f... | 08/14/1984 |
| 4447335 | Process for the preparation of thin films of cadmium sulfide and precursor solutions of cadmium ammonia thiocyanate complex useful therein A process is provided for the preparation of thin films of cadmium sulfide by deposition of cadmium sulfide formed in the thermal decomposition of an aqueous solution of cadmium ammonia thiocyanate complex, useful particularly in the preparation of thin c... | 05/08/1984 |
| 4425194 | Photo-voltaic power generating means and methods A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an e... | 01/10/1984 |
| 4400244 | Photo-voltaic power generating means and methods A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an e... | 08/23/1983 |
| 4388483 | Thin film heterojunction photovoltaic cells and methods of making the same A method of fabricating a thin film heterojunction photovoltaic cell which comprises depositing a film of a near intrinsic or n-type semiconductor compound formed of at least one of the metal elements of Class II B of the Periodic Table of Elements and at... | 06/14/1983 |
| 4360542 | Process for the preparation of thin films of cadmium sulfide and precursor solutions of cadmium ammonia thiocyanate complex useful therein A process is provided for the preparation of thin films of cadmium sulfide by deposition of cadmium sulfide formed in the thermal decomposition of an aqueous solution of cadmium ammonia thiocyanate complex, useful particularly in the preparation of thin c... | 11/23/1982 |
| 4345107 | Cadmium telluride photovoltaic cells Photovoltaic cell comprises thin film cadmium telluride in ohmic contact with a conductive substrate, preferbaly comprising a cadmium surface, through a cadmium-rich layer at the interface with the substrate. The cell further includes a rectifying barrier... | 08/17/1982 |
