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| Number | Title | Issue Date |
| 7405140 | Low temperature formation of patterned epitaxial Si containing films A method for selectively forming an epitaxial Si containing film on a semiconductor structure at low temperature. The method includes providing the structure in a process chamber, the structure containing a Si substrate having an epitaxial Si surface area and a patt... | 07/29/2008 |
| 7220324 | Technique for the growth of planar semi-polar gallium nitride A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grow... | 05/22/2007 |
| 7186302 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet ... | 03/06/2007 |
| 7081418 | Method of fabricating a multi-layered thin film by using photolysis chemical vapor deposition A method of forming a multi-layered thin film uses photolysis chemical vapor deposition (PCVD). In the method, a substrate for a process of forming the multi-layered thin film is prepared. At least two source gases are supplied to the substrate. Reaction lights havi... | 07/25/2006 |
| 6664565 | ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal A ZnO crystal growing method having the steps of: growing a low temperature growth ZnO layer on a sapphire substrate at a temperature lower than a single crystal ZnO growth temperature; thermally processing the low temperature growth ZnO layer at a temper... | 12/16/2003 |
| 6599362 | Cantilever epitaxial process A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the react... | 07/29/2003 |
| 6060119 | Compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound tertiarybutylbis-(dimethylamino)phosphine A new compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound, which has the formula ((CH3)3 C) ((CH3)2 N)2 P. The process has the steps of: (1) reacting phosphorus... | 05/09/2000 |
| 6020253 | Use of tertiarybutylbis-(dimethylamino)phosphine in forming semiconductor material by chemical vapor deposition A new compound, tertiarybutylbis-(dimethylamino)phosphine, ((CH3)3 C)((CH3)2 N)2 P, is used as a precursor in forming phosphorus-containing semiconductor material by chemical vapor deposition. Tertiar... | 02/01/2000 |
| 5935324 | Apparatus and method for forming I-III-VI2 thin-film layers An apparatus for forming I-III-VI2 thin-film layers has a reaction chamber made of a carbon material in which a precursor for forming a I-III-VI2 thin-film layer and a vapor source of an element of group VI of the periodic table are ... | 08/10/1999 |
| 5871630 | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a... | 02/16/1999 |
| 5865897 | Method of producing film of nitrogen-doped II-VI group compound semiconductor A film of a II-VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited... | 02/02/1999 |
| 5786233 | Photo-assisted annealing process for activation of acceptors in semiconductor compound layers Active acceptor concentrations of p-doped II-VI and III-V semiconductor compound layer provided by chemical vapor deposition are increased by photo-assisted annealing.... | 07/28/1998 |
| 5773085 | Method of manufacturing ternary compound thin films One kind of element belonging to I group or II group and one kind of binary compound including one kind of element belonging to III group and one kind of element selected from the group consisting of S, Se, Te and O are evaporated respectively by means of... | 06/30/1998 |
| 5766345 | Epitaxial growth method of semiconductor An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it ... | 06/16/1998 |
| 5718761 | Method of forming crystalline compound semiconductor film A method of forming a crystalline compound semiconductor film comprises introducing into a crystal forming space housing a substrate on which a non-nucleation surface (SNDS) having a smaller nucleation density and a nucleation surface (SND... | 02/17/1998 |
| 5658834 | Forming B1-x Cx semiconductor layers by chemical vapor deposition Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio of the deposited material is controlled so that the film h... | 08/19/1997 |
| 5468978 | Forming B1-x Cx semiconductor devices by chemical vapor deposition Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio of the deposited material is controlled so that the film h... | 11/21/1995 |
| 5382542 | Method of growth of II-VI materials on silicon using As passivation A metalorganic arsenic source comprising R3-m AsHm, where R is an organic radical selected from the group consisting of Cn H2n+1 and Cn H2n-1, where n ranges from 1 to 6, and where m is 1 or 2, ... | 01/17/1995 |
| 5363800 | Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafe... | 11/15/1994 |
| 5354708 | Method of nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wa... | 10/11/1994 |
| 5304820 | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (SNDS) with smaller nucleation density and a nucleation surface (SNDL | 04/19/1994 |
| 5296087 | Crystal formation method A crystal formation method is disclosed which is a crystal growth method comprising feeding two or more kinds of reactive starting gases alternately into a crystal formation treatment space having a substrate with a non-nucleation surface (SNDS... | 03/22/1994 |
| 5275966 | Low temperature process for producing antimony-containing semiconductor materials Tri-isopropylantimony is used as a source of antimony in chemical vapor deposition production of semiconductor materials. The process can be used to introduce antimony as a dopant into III/V and II/VI semiconductor materials.... | 01/04/1994 |
| 5273931 | Method of growing epitaxial layers of N-doped II-VI semiconductor compounds Epitaxial layers of N-doped II-VI semiconductor compounds are grown on GaAs substrates by MOCVD using FME. Separating the growth and doping by alternating introduction of (1) the semiconductor cation and anion and (2) the cation and the dopant increases t... | 12/28/1993 |
| 5248385 | Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers The invention is a method for growing homoepitaxial films of SiC on low-tilt-angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive meth... | 09/28/1993 |
| 5178904 | Process for forming deposited film from a group II through group VI metal hydrocarbon compound A process for forming a deposited film on a substrate in the absence of a plasma is conducted by generating in an activation space an activated species capable of chemically reacting with a compound for film formation and introducing into a film-forming s... | 01/12/1993 |
| 5157136 | Single-source metalloorganic precursors to produce II/VI materials The present invention relates a precursor metal organic compound of the formula: (R3 --Si)3 --Y--Q--M--A (I) wherein M is selected from the Group IIb elements of zinc, cadmium, or mercury; A is selected from amide... | 10/20/1992 |
| 5150191 | P-type II-VI compound semiconductor doped An optical semiconductor device is provided with a p-type ZnSe semiconductor layer. Si, Cl and O atoms are added, as dopants, to the ZnSe semiconductor layer. Associations of the Si, Cl and O atoms are formed to define a shallow acceptor level in the semi... | 09/22/1992 |
| 5123995 | Low-temperature, photo-induced epitaxy Disclosed herein is a process for producing a thin film of epitaxial material on a substrate surface at low temperatures under ultrahigh vacuum conditions. In general, precursor compounds are deposited, and converted into the epitaxial material, on the su... | 06/23/1992 |
| 5100832 | Process for preparing epitaxial compound semiconductor A process for preparing a doped epitaxial compound semiconductor on a substrate by molecular beam epitaxy, the molecular beam epitaxy being effected under the irradiation of the substrate surface with a specific electromagnetic radiation.... | 03/31/1992 |
| 5091333 | Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The met... | 02/25/1992 |
| 5070814 | CVD reactor vessel for forming a solid state electronic device A CVD reactor vessel for forming a solid state electronic device comprising (a) a reaction zone laterally separated from a first zone, (b) support means for supporting a substrate in said reaction zone, (c) heating means for heating both said first zone a... | 12/10/1991 |
| 5055421 | Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons The invention provides a method for making a new semiconductor base material comprising thin layers of amorphous, hydrogenous carbon (a-c:H) with a specific electrical resistance of between 101 and 108 Ω.cm and a charge carrier conc... | 10/08/1991 |
| 5028488 | Functional ZnSe1-x Tex :H deposited film A functional ZnSe1-x Tex :H film having a high doping efficiency and with no substantial change in the characteristics upon light irradiation. Said film is characterized in that the Se/Te quantitative ratio is in the range from 3:7 t... | 07/02/1991 |
| 5026661 | Method of manufacturing zinc chalcogenide semiconductor devices using LP-MOCVD A method of growing zinc chalcogenide in an atmosphere which contains the vapor of di-π-cyclopentadienyl manganese or di-π-alkyl cyclopentadienyl manganese that serves as a source of manganese. By growing zinc chalcogenide in the above atmosphere, there... | 06/25/1991 |
| 5011549 | Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon Device quality monocrystalline Alpha-SiC thin films are epitaxially grown by chemical vapor deposition on Alpha-SiC [0001] substrates prepared off axis.... | 04/30/1991 |
| 5010033 | Process for producing compound semiconductor using an amorphous nucleation site A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (SNDS) with smaller nucleation density and a nucleation surface (SNDL | 04/23/1991 |
| 4992303 | Chemical vapor deposition of cadmium mercury telluride In the manufacture of an electronic device, e.g. an infrared detector of cadmium mercury telluride, a gas stream (36) comprising two or more reactants is passed over a heated substrate (29) in a reaction zone (C) of a reactor vessel (1) so as to deposit m... | 02/12/1991 |
| 4983249 | Method for producing semiconductive single crystal A n-type ZnSe thin layer is prepared by heating a ZnSe signal crystal substrate in a hydrogen atmosphere under a pressure of from 0.1 Torr. to 10 Torr. at a temperature of from 250° C. to 450° C. while supplying a gaseous organozinc compound, H2 | 01/08/1991 |
| 4981722 | Apparatus for the gas-phase processing of disk-shaped workpieces An apparatus for the gas-phase processing of disk-shaped workpieces serves for maintaining cleanliness of the processing space and the workpiece or for avoiding deposits on parts of the workpiece which are not inteded to be coated. In particular a second ... | 01/01/1991 |
