Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
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| Number | Title | Issue Date |
| 7413998 | Biased pulse DC reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed... | 08/19/2008 |
| 7381657 | Biased pulse DC reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed... | 06/03/2008 |
| 7297642 | Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applications A method is provided for forming a rare earth (RE) element-doped silicon (Si) oxide film with nanocrystalline (nc) Si particles. The method comprises: providing a first target of Si, embedded with a first rare earth element; providing a second target of Si; co-sputt... | 11/20/2007 |
| 6649434 | Method of manufacturing semiconductor device having ZnO based oxide semiconductor layer In the case in which a ZnO based oxide semiconductor layer is to be hetero-epitaxially grown on a substrate formed of a material which is different from that of a ZnO based oxide semiconductor, the ZnO based oxide semiconductor layer is grown at a high te... | 11/18/2003 |
| 6624441 | Homoepitaxial layers of p-type zinc oxide and the fabrication thereof A semiconductor structure for providing an epitaxial zinc oxide layer having p-type conduction for semiconductor device manufacture and methods of depositing the p-type zinc oxide layer. A zinc oxide layer is deposited epitaxially by molecular beam epitax... | 09/23/2003 |
| 6610141 | Zinc oxide films containing p-type dopant and process for preparing same A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor con... | 08/26/2003 |
| 6368983 | Multi-layer wafer fabrication The invention provides a method of fabricating a wafer including growing a single crystal layer comprising a III-V compound in a first chamber at a temperature above 350° C. A temperature of a surface of the single crystal layer is reduced to below about... | 04/09/2002 |
| 6342313 | Oxide films and process for preparing same A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor con... | 01/29/2002 |
| 6206962 | Semiconductor light emitting device and method of manufacturing same An n-type cladding layer, the first guiding layer, an active layer, the second guiding layer, a p-type cladding layer, a backing layer, a contact layer, a superlattice layer and a cap layer are stacked in this order on an n-type substrate. The cap layer c... | 03/27/2001 |
| 6126740 | Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the m... | 10/03/2000 |
| 6045614 | Method for epitaxial growth of twin-free, (111)-oriented II-VI alloy films on silicon substrates A method is provided for depositing a (111)-oriented heteroepitaxial II-VI alloy film on Si substrates. The (111)-oriented heteroepitaxial II-VI alloy film may comprise II-VI semiconductor and/or II-VI semimetal. As such, the method of the present inventi... | 04/04/2000 |
| 6043141 | Method for in situ growth of p-type doped group II-VI semiconductor films A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material wherein a cation-rich condition is established at a surface of the lattice. The method further... | 03/28/2000 |
| 6036772 | Method for making semiconductor device A method for making a semiconductor device comprises: depositing at least one Group II-VI compound semiconductor layer comprising at least one Group II element selected from the group consisting of zinc, magnesium, manganese, beryllium, cadmium and mercur... | 03/14/2000 |
| 6001669 | Method for producing II-VI compound semiconductor epitaxial layers having low defects Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the ... | 12/14/1999 |
| 5994642 | Method for preparing CdTe film and solar cell using the same A method for forming a CdTe film of good quality by an improved close-spaced sublimation process is disclosed. This method comprises: a step of applying a paste which contains material for CdTe semiconductor on a supporting member, thereby to form a coati... | 11/30/1999 |
| 5989339 | MBE system and semiconductor device fabricated, using same A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-VI column compound semiconductor layers not containing Te. The second chamber is used to form ... | 11/23/1999 |
| 5976958 | Method for growth of in situ p-type semiconductor films using a group V flux A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material and generating a first Group V flux by evaporating a solid Group V source material. The first ... | 11/02/1999 |
| 5879962 | III-V/II-VI Semiconductor interface fabrication method A method for repeatably fabricating GaAs/ZnSe and other III-V/II-VI semiconductor interfaces with relatively low stacking fault densities in II-VI semiconductor devices such as laser diodes. The method includes providing a molecular beam epitaxy (MBE) sys... | 03/09/1999 |
| 5874349 | Multi-layer structure for II-VI group compound semiconductor and method for forming the same In a method of forming a II-VI compound semiconductor thin film on an InP substrate, a layer of III-V compound semiconductor mixed crystal is first formed on the InP substrate. The desorption rate of a group V element constituting the III-V compound semic... | 02/23/1999 |
| 5871630 | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a... | 02/16/1999 |
| 5865897 | Method of producing film of nitrogen-doped II-VI group compound semiconductor A film of a II-VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited... | 02/02/1999 |
| 5834361 | Multi-layer structure for II-VI group compound semiconductor on an InP substrate and method for forming the same In a method of forming a II-VI compound semiconductor thin film on an InP substrate, a layer of III-V compound semiconductor mixed crystal is first formed on the InP substrate. The desorption rate of a group V element constituting the III-V compound semic... | 11/10/1998 |
| 5780322 | Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser A method for growing a II-VI compound semiconductor layer containing Cd, such as Zn1-x Cdx Se, by a molecular beam epitaxy method is disclosed. During the growth, the ratio of the intensity of molecular beams of a group VI element to... | 07/14/1998 |
| 5773085 | Method of manufacturing ternary compound thin films One kind of element belonging to I group or II group and one kind of binary compound including one kind of element belonging to III group and one kind of element selected from the group consisting of S, Se, Te and O are evaporated respectively by means of... | 06/30/1998 |
| 5766345 | Epitaxial growth method of semiconductor An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it ... | 06/16/1998 |
| 5711803 | Preparation of a semiconductor thin film A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simult... | 01/27/1998 |
| 5712187 | Variable temperature semiconductor film deposition A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on... | 01/27/1998 |
| 5707900 | Method of heat-treating semiconductor crystal of a group II-group VI compound Known MBE methods of heat-treating semiconductor crystal of a group II-group VI compound for crystal growth are accompanied by a problem of releasing the component elements during the heat-treatment to produce a coarse crystal surface that adversely affec... | 01/13/1998 |
| 5637530 | II-VI compound semiconductor epitaxial layers having low defects, method for producing and devices utilizing same Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the ... | 06/10/1997 |
| 5574296 | Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer An electromagnetic radiation transducer is provided having a p-type ZnSe layer and an n-type layer. The p-type ZnSe layer has a net donor to net acceptor ratio (ND /NA) of less than or equal to about 0.8. The net acceptor concentrati... | 11/12/1996 |
| 5511509 | Apparatus for p-type doping of semiconductor structures formed of group II and group VI elements A method and apparatus (10) for forming a p-doped layer (68, 80, 92) of Group II and Group VI elements by molecular beam epitaxial process in which a nitrogen dopant is introduced as the layer (68, 80, 92) is being grown. In one embodiment, molecular nitr... | 04/30/1996 |
| 5508522 | Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main pla... | 04/16/1996 |
| 5399503 | Method for growing a HgCdTe epitaxial layer on a semiconductor substrate A method for growing an epitaxial layer of a group II-VI tenary or quaternary compound on a substrate. In particular a HgCdTe semiconductor layer is grown on a substrate such as sapphire which does not interdiffuse with the materials in the semiconductor ... | 03/21/1995 |
| 5398641 | Method for p-type doping of semiconductor structures formed of group II and group VI elements A method and apparatus (10) for forming a p-doped layer (68, 80, 92) of Group II and Group VI elements by molecular beam epitaxial process in which a nitrogen dopant is introduced as the layer (68, 80, 92) is being grown. In one embodiment, molecular nitr... | 03/21/1995 |
| 5396862 | Method of manufacturing a compound semiconductor A compound semiconductor thin film is grown on a compound semiconductor surface, which is cleaned by irradiating the surface with gas containing at least hydrogen molecules and by efficiently removing contaminant on the surface at low temperature. A beam ... | 03/14/1995 |
| 5395791 | Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal ... | 03/07/1995 |
| 5372970 | Method for epitaxially growing a II-VI compound semiconductor A method for epitaxially growing a II-VI compound semiconductor according to this invention comprises the steps of epitaxially growing a GaAsx Se1-x layer on a GaAs substrate and epitaxially growing a ZnSe layer or a compound semicon... | 12/13/1994 |
| 5248631 | Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals A method and apparatus for enhanced doping of IIB-VIA semiconductors through the use of a free-radical source is described. The process involves the simultaneous production of beams of free-radicals together with group IIB molecules or atoms and group VIA... | 09/28/1993 |
| 5204283 | Method of growth II-VI semiconducting compounds A high-purity II-VI semiconducting compound can be produced by initially preparing a substrate of a II-VI semiconducting compound by a chemical transport method with a halogen as transport medium and then epitaxially growing a layer of a II-VI compound on... | 04/20/1993 |
| 5100832 | Process for preparing epitaxial compound semiconductor A process for preparing a doped epitaxial compound semiconductor on a substrate by molecular beam epitaxy, the molecular beam epitaxy being effected under the irradiation of the substrate surface with a specific electromagnetic radiation.... | 03/31/1992 |
