Class 257/E21.461 - Deposition of semiconductor material on substrate, e.g., epitaxial growth (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.459. This
No. of patents: 74
Last issue date: 08/12/2008

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Number	Title	Issue Date
7410864	Trench and a trench capacitor and method for forming the same A method for fabricating a trench includes providing a semiconductor substrate made of a semiconductor material. A trench is etched into a surface of the semiconductor substrate such that a trench wall is produced. At least one layer is provided on the trench wall. ...	08/12/2008
7399686	Method and apparatus for making coplanar dielectrically-isolated regions of different semiconductor materials on a substrate A semiconductor processing method includes providing a substrate, forming a plurality of semiconductor layers in the substrate, each of the semiconductor layers being distinct and selected from different groups of semiconductor element types, the semiconductor layer...	07/15/2008
7364990	Epitaxial crystal growth process in the manufacturing of a semiconductor device First and second preliminary epitaxial layers are grown from single-crystalline seeds in openings in an insulation layer until the first and second epitaxial layers are connected to each other. While the first and second preliminary epitaxial layers are being grown,...	04/29/2008
7338886	Implantation-less approach to fabricating strained semiconductor on isolation wafers A method of fabricating a semiconductor substrate includes forming a buffer layer on the substrate. A Ge containing layer, such as a SiGe is formed over the buffer layer. The buffer layer includes defects at the interface of the substrate and buffer layer. The subst...	03/04/2008
7312128	Selective epitaxy process with alternating gas supply In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amo...	12/25/2007
7265417	Method of fabricating semiconductor side wall fin A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance....	09/04/2007
7259084	Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer This invention provides a process for growing Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaxial layers by using metal organic chemic...	08/21/2007
7253084	Deposition from liquid sources A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid tr...	08/07/2007
7192892	Atomic layer deposited dielectric layers An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate sur...	03/20/2007
7169713	Atomic layer deposition (ALD) method with enhanced deposition rate An atomic layer deposition method for forming a microelectronic layer employs a reactor chamber pressure of greater than about 500 mtorr and more preferably from about 20 to about 50 torr. By employing a reactor chamber pressure within the foregoing range, the micro...	01/30/2007
7115489	Methods of growing epitaxial silicon Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided. ...	10/03/2006
6673478	Crystal-growth substrate and a ZnO-containing compound semiconductor device In a method of growing a ZnO-containing compound semiconductor single crystal, on a compound single crystal layer of a hexagonal crystal structure having a plurality of (0001) surfaces aligned in a sequence of terraces along a direction of a-axis, a ZnO-c...	01/06/2004
6583450	II-VI semiconductor device with BeTe buffer layer A II-VI semiconductor device includes a stack of II-VI semiconductor layers electrically connected to a top electrical contact. A GaAs substrate is provided which supports the stack of II-VI semiconductor layers and is positioned opposite to the top elect...	06/24/2003
6399473	Method of producing a II-VI semiconductor component containing selenium and/or sulrfur A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an ess...	06/04/2002
6320208	II-VI compound semiconductor device A layer structure for a II-VI compound semiconductor device is formed on a GaAs substrate of III-V compound, wherein lattice mismatching is prevented by a first layer interposed between the GaAs substrate and a II-VI compound semiconductor active layer an...	11/20/2001
6072202	II-VI compound semiconductor device with III-V buffer layer A layer structure for a II-VI compound semiconductor device is formed on a GaAs substrate of III-V compound, wherein lattice mismatching is prevented by a first layer interposed between the GaAs substrate and a II-VI compound semiconductor active layer an...	06/06/2000
6010937	Reduction of dislocations in a heteroepitaxial semiconductor structure A heteroepitaxial semiconductor device having reduced density of threading dislocations and a process for forming such a device. According to one embodiment, the device includes a substrate which is heat treated to a temperature in excess of 1000° C., a ...	01/04/2000
6001669	Method for producing II-VI compound semiconductor epitaxial layers having low defects Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the ...	12/14/1999
5959308	Epitaxial layer on a heterointerface Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs (110) on silicon (102) is accomplished by formation of a defect annihilating grid (104) on the silicon (102) prior to the epitaxy of the GaAs (110)....	09/28/1999
5874349	Multi-layer structure for II-VI group compound semiconductor and method for forming the same In a method of forming a II-VI compound semiconductor thin film on an InP substrate, a layer of III-V compound semiconductor mixed crystal is first formed on the InP substrate. The desorption rate of a group V element constituting the III-V compound semic...	02/23/1999
5750434	Surface polishing of silicon carbide electronic device substrate using CEO₂ A silicon carbide substrate is dry-polished using chromium oxide Cr2 O3, ion oxide Fe2 O3, or cerium oxide CeO2 to obtain a good polished surface free of mechanical defects and with less crystal disto...	05/12/1998
5610413	Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cl...	03/11/1997
5602057	Process of making a semiconductor device using crystal growth by a nucleation site in a recessed substrate and planarization A semiconductor device includes a substrate, a recess formed on the substrate, a first conductive type semiconductor region and a second conductive type semiconductor region having an opposite conductive type to the first conductive type formed in the rec...	02/11/1997
5581117	Si base substrate covered by a CdTe or Cd-rich CdZnTe layer The present invention provides an Si base semiconductor monocrystal substrate which includes an Si(11n) substrate where n=1.5-2.5. An intermediate layer is formed on the Si(11n) substrate. The intermediate layer is made of a material selected from the gro...	12/03/1996
5578503	Rapid process for producing a chalcopyrite semiconductor on a substrate To produce a polycrystalline, single-phase compound semiconductor layer of the chalcopyrite type ABC2, it is proposed to deposit, on a substrate, a layer structure which comprises a plurality of layers and which contains the components in eleme...	11/26/1996
5567469	Process for producing chalcopyrite type compound thin film A chalcopyrite compound, for instance, CuInS2 or CuInSe2, is prepared by subjecting a thin film containing copper metal, indium metal, and an indium compound or a compound which contains both indium and copper, selected from the grou...	10/22/1996
5511509	Apparatus for p-type doping of semiconductor structures formed of group II and group VI elements A method and apparatus (10) for forming a p-doped layer (68, 80, 92) of Group II and Group VI elements by molecular beam epitaxial process in which a nitrogen dopant is introduced as the layer (68, 80, 92) is being grown. In one embodiment, molecular nitr...	04/30/1996
5471946	Method for producing a wafer with a monocrystalline silicon carbide layer To produce a large-surface wafer, a monocrystalline SiC layer (4) is grown epitaxially on a monocrystalline Si layer (1) provided with a nucleation layer (3) by carbonization. On the monocrystalline SiC layer (4), a polycrystalline SiC layer (5) is deposi...	12/05/1995
5463978	Compound semiconductor and controlled doping thereof A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth...	11/07/1995
5449927	Multilayer buffer structure including II-VI compounds on a silicon substrate A layer (32) of a HgCdTe compound epitaxially contacts a buffer structure, which in turn epitaxially contacts a silicon substrate (22). The buffer structure is formed of II-VI compounds, and preferably includes at least one layer (24) of a ZnSeTe compound...	09/12/1995
5398641	Method for p-type doping of semiconductor structures formed of group II and group VI elements A method and apparatus (10) for forming a p-doped layer (68, 80, 92) of Group II and Group VI elements by molecular beam epitaxial process in which a nitrogen dopant is introduced as the layer (68, 80, 92) is being grown. In one embodiment, molecular nitr...	03/21/1995
5399206	Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates Ternary II-VI semiconductor films (16) are formed on a silicon substrate (12) by first depositing a monolayer of arsenic (14) or other Group V metal on a cleaned surface of the substrate. The ternary II-VI semiconductor film is then formed over the arseni...	03/21/1995
5394826	Method of (111) group II-VI epitaxial layer grown on (111) silicon substrate A group II-VI epitaxial layer grown on a (111) silicon substrate has a lattice mismatch which is minimized, as between the group II-VI epitaxial layer and the silicon substrate. The grown group II-VI epitaxial layer also has a (111) plane at the interface...	03/07/1995
5385651	Digital electrochemical etching of compound semiconductors A method for the digital electrochemical etching of compound semiconductors in an electrochemical flow cell system in which alternating electrochemical potentials are applied between a reference electrode and the compound semiconductor sufficient to strip...	01/31/1995
5382542	Method of growth of II-VI materials on silicon using As passivation A metalorganic arsenic source comprising R3-m AsHm, where R is an organic radical selected from the group consisting of Cn H2n+1 and Cn H2n-1, where n ranges from 1 to 6, and where m is 1 or 2, ...	01/17/1995
5372970	Method for epitaxially growing a II-VI compound semiconductor A method for epitaxially growing a II-VI compound semiconductor according to this invention comprises the steps of epitaxially growing a GaAsx Se1-x layer on a GaAs substrate and epitaxially growing a ZnSe layer or a compound semicon...	12/13/1994
5373171	Thin film single crystal substrate A thin film single crystal substrate useful in the production of a semiconductor, comprising a base substrate made of single crystal diamond and at least one thin film of a single crystal of a material selected from the group consisting of silicon carbide...	12/13/1994
5368880	Eutectic bond and method of gold/titanium eutectic bonding of cadmium telluride to sapphire A method of forming a eutectic bond, of Cadmium Telluride to Sapphire utilizing the Gold/Silicon eutectic bonding of the Cadmium Telluride to the Sapphire. A multi-layer structure of: Chromium which provides adhesion to the Cadmium Telluride; a Titanium l...	11/29/1994
5363800	Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers This invention is a method for the controlled growth of single-crystal semiconductor-device-quality films of SiC polytypes on vicinal (0001) SiC wafers with low tilt angles. Both homoepitaxial and heteroepitaxial SiC films can be produced on the same wafe...	11/15/1994
5334864	Process for selective formation of II-VI group compound film A process for selective formation of a II-VI group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group II atoms of periodic table and a starting material for supplying th...	08/02/1994

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Class 257/E21.461 - Deposition of semiconductor material on substrate, e.g., epitaxial growth (EPO)