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| Number | Title | Issue Date |
| 7368334 | Silicon-on-insulator chip with multiple crystal orientations A silicon-on-insulator chip includes an insulator layer, typically formed over a substrate. A first silicon island with a surface of a first crystal orientation overlies the insulator layer and a second silicon island with a surface of a second crystal orientation a... | 05/06/2008 |
| 7341899 | Method of fabricating a thin film transistor A method of fabricating a thin film transistor is disclosed. The method comprises forming an amorphous silicon layer overlying a substrate. A first heat treatment is then performed to reduce the hydrogen atom concentration of the amorphous silicon layer. Next, the a... | 03/11/2008 |
| 7294872 | Solid state image pickup device and its manufacture method PROBLEM To provide a high quality solid state image pickup device. SOLUTION Impurities are implanted into a semiconductor substrate to form vertical transfer channels for transferring electric charges in a first direction and to form a drain near each of the vertica... | 11/13/2007 |
| 6448592 | Charge coupled device, and method of manufacturing such a device It is known in charge coupled devices to use a dual layer of silicon oxide and silicon nitride as the gate dielectric. Since silicon nitride is practically impermeable to hydrogen, the nitride layer is usually provided with openings through which hydrogen... | 09/10/2002 |
| 6306212 | Gallium arsenide semiconductor devices fabricated with insulator layer An insulator layer for single crystal gallium arsenide substrates in which the insulator layer is compliantly matched with the substrate and the insulator layer is free of defects causing surface roughness and crystalline defect problems which, otherwise,... | 10/23/2001 |
| 6208001 | Gallium arsenide semiconductor devices fabricated with insulator layer An insulator layer for single crystal gallium arsenide substrates in which the insulator layer is compliantly matched with the substrate and the insulator layer is free of defects causing surface roughness and crystalline defect problems which, otherwise,... | 03/27/2001 |
| 6190911 | Semiconductor device and fabrication method thereof A method for fabricating a semiconductor device having a wiring part connected via an opening portion formed in an insulting film on a semiconductor region to the semiconductor region. The wiring part includes a polycrystalline semiconductor layer and a m... | 02/20/2001 |
| 5959318 | Solid state image pickup device with polygates A solid state image pickup device includes a semiconductor substrate, a CCD channel region in the semiconductor substrate, a plurality of polygates over the CCD channel regions, and a photoelectric conversion region having a portion above an uppermost sur... | 09/28/1999 |
| 5943556 | Method for manufacturing an electric charge transfer device In a method for manufacturing a charge transfer device, an N type semiconductor region is formed in a principal surface of a P type semiconductor substrate, to constitute a transfer channel of the charge transfer device. A silicon oxide film is formed to ... | 08/24/1999 |
| 5932006 | BaF2 /GaAs electronic components Metal insulator semiconductor field effect transistors (MISFETs), charge coupled devices (CCDs), and capacitors based on an epitaxial barium fluoride (BF2) insulator layer deposited directly onto a single crystal gallium arsenide (GaAs) substra... | 08/03/1999 |
| 5910013 | Process for manufacturing a solid-state pick-up device A V-H transfer section is formed by the following steps: N+-type impurities are first ion-implanted in such a manner that they spread out into an area larger than a channel of a vertical transfer register. An electrode of the vertical transfer register an... | 06/08/1999 |
| 5858811 | Method for fabricating charge coupled device (CCD) as semiconductor device of MOS structure The method for fabricating a charge coupled device disclosed includes the steps of forming a gate oxide film and forming a transfer electrode. The provisional oxide film is formed on a semiconductor substrate, and the provisional oxide film at a transfer ... | 01/12/1999 |
| 5849605 | Two-phase clock type charge coupled device having electrodes with tapered sidewalls and method for producing the same In a charge coupled device (CCD) comprising a semiconductor substrate having a channel layer therein and a gate insulator thereon, a plurality first electrodes arranged in charge transfer direction on the gate insulator with inter-electrode spaces defined... | 12/15/1998 |
| 5837563 | Self aligned barrier process for small pixel virtual phase charged coupled devices The method for making a charge coupled device includes: forming a semiconductor region 24 of a first conductivity type; forming gate regions 28 and 30 overlying and separated from the semiconductor region 24; forming clocked barrier implants 36 and 38 of ... | 11/17/1998 |
| 5830778 | Method of manufacturing a charge transfer device In a charge transfer device including single-layer charge transfer electrodes including a p-type polycrystalline silicon layer and an n-type polycrystalline silicon layer, the sizes of the charge accumulation and potential barrier regions can be set to de... | 11/03/1998 |
| 5793070 | Reduction of trapping effects in charge transfer devices A charge transfer device including a semiconductor substrate, a gate electrode provided in association with the substrate, the gate electrode having a corresponding channel region through which charge is propagated, the channel region having a predetermin... | 08/11/1998 |
| 5726080 | Method of performing edge-aligned implants A methodology for producing an edge aligned implant beneath an electrode with reduced lateral spread, comprising the steps of: providing a dielectric layer on a substrate; forming an etch-stop layer on the dielectric layer; forming a sacrificial material ... | 03/10/1998 |
| 5719075 | Method of making a planar charge coupled device with edge aligned implants and electrodes connected with overlying metal A method of making a fully self-aligned, planar, two phase charge coupled device comprises the steps of first forming upon a semiconductive substrate a uniform dielectric; then implanting ions of a second conductivity type into the substrate, then pattern... | 02/17/1998 |
| 5641700 | Charge coupled device with edge aligned implants and electrodes A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment... | 06/24/1997 |
| 5627096 | Manufacturing method of electric charge transferring devices A resist layer with a pattern having openings on portions exposed to boundaries between any two adjacent transfer gate electrodes is formed on the surface of a polycrystal silicon layer used as a material for forming the transfer gate electrodes which pol... | 05/06/1997 |
| 5578511 | Method of making signal charge transfer devices A method of making a signal charge transfer device, including the steps of: forming first conductivity-type channel regions (30) in each of second conductivity-type wells (20) formed in a first conductivity-type semiconductor substrate (10); forming a plu... | 11/26/1996 |
| 5578842 | Charge coupled device image sensor A charge coupled device (CCD) image sensor and more particularly a wiring of charge transfer electrodes of a CCD image sensor which is made suitable for improving the charge transfer efficiency of vertical charge coupled devices (VCCDs) thereof. The CCD i... | 11/26/1996 |
| 5556801 | Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes A method of making a fully self-aligned, planar, two phase charge coupled device comprises the steps of first forming upon a semiconductive substrate a uniform insulative layer; then implanting ions of a second conductivity type into the substrate, then p... | 09/17/1996 |
| 5541133 | Method of manufacturing insulated electrodes in a semiconductor device and semiconductor device manufactured by such a method Method of manufacturing a semiconductor device and semiconductor device manufactured by such a method. A method of manufacturing a semiconductor device whereby a surface of a semiconductor body 1 is covered with an electrically insulating layer 8 and at l... | 07/30/1996 |
| 5536678 | Method of manufacturing a wiring arrangement for a semiconductor device using insulating and etch stop layers An integrated circuit has an interconnection pattern which is recessed in the insulating layer, for example, an oxide layer. A groove is etched in the insulating layer corresponding to the metal pattern by means of a mask which is the inverted image of th... | 07/16/1996 |
| 5516716 | Method of making a charge coupled device with edge aligned implants and electrodes A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment... | 05/14/1996 |
| 5497020 | Charge drain for a MIS device A semiconductor device which has a diffusion layer region in a semiconductor body, and a MIS transistor with a gate electrode formed on the semiconductor body that is connected to the diffusion layer region. The semiconductor device is made by the steps o... | 03/05/1996 |
| 5466621 | Method of manufacturing a semiconductor device having silicon islands A semiconductor device such as FET or charge coupled device, having a channel or a charge coupled portion provided in a thin semiconductor layer which is nearly perpendicular to the substrate and to which the necessary electrode such as the gate electrode... | 11/14/1995 |
| 5460997 | Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes A method of making a fully self-aligned, planar, two phase charge coupled device comprises the steps of first forming upon a semiconductive substrate a uniform first insulative dielectric layer; then depositing and patterning in the form of a trench exten... | 10/24/1995 |
| 5457332 | Process for manufacturing integrated circuits with juxtaposed electrodes and corresponding integrated circuit The invention relates to integrated circuits and their manufacture. A process is described for producing electrodes juxtaposed very close together, such as those encountered in charge-coupled shift registers. According to the invention, a first polycrystalline... | 10/10/1995 |
| 5441910 | Method for manufacturing CCD type solid image pickup device using self-alignment process An impurity doped region for a vertical transfer portion is formed by using a first mask pattern layer. An impurity doped region for a horizontal transfer portion is formed by using a second mask pattern layer which is formed by using the first mask patte... | 08/15/1995 |
| 5401679 | Method of manufacturing charge transfer device To manufacture a charge transfer device, a first insulating film is deposited on a surface of a semiconductor substrate as a charge transfer region for transferring charge packets therein in one direction. Then, a plurality of first transfer electrodes ar... | 03/28/1995 |
| 5396092 | Wiring arrangement for a semiconductor device using insulating and etch stop layers An integrated circuit has an interconnection pattern which is recessed in the insulating layer, for example, an oxide layer. A groove is etched in the insulating layer corresponding to the metal pattern by means of a mask which is the inverted image of th... | 03/07/1995 |
| 5346834 | Method for manufacturing a semiconductor device and a semiconductor memory device An improved method for manufacturing an insulated gate field effect transistor is provided. As a first step, a silicon oxide film is grown on a silicon substrate, and a first silicon nitride film is deposited thereon. The first silicon nitrite film, the s... | 09/13/1994 |
| 5334867 | Image sensor device with insulation film A charge-coupled device (CCD) is provides having improved charge transfer efficiency. This CCD is a portion of an image sensor and manufactured by first laminating a first oxidation film and a first nitride film one after the other on a semiconductor subs... | 08/02/1994 |
| 5315137 | Charge transfer device, process for its manufacture, and method of driving the device The present invention relates to a charge transfer device having high transfer efficiency without leaving over signal charges, a charge transfer device substantially shortened in the gate length so as to enhance the transfer speed, and a method of manufac... | 05/24/1994 |
| 5314836 | Method of making a single electrode level CCD The disclosure is directed to a method of forming a CCD with two sets of gate electrodes in a single layer of a conductive material. The method comprises forming a channel region in a body of a semiconductor material along a surface thereof and forming a ... | 05/24/1994 |
| 5306390 | Method of manufacturing a semiconductor device using an implantation mask For manufacturing an implantation mask on a semiconductor surface which is provided with grooves, a positive photoresist is provided on the surface. Portions of the photoresist which are to form the implantation mask are illuminated in a first step and re... | 04/26/1994 |
| 5302544 | Method of making CCD having a single level electrode of single crystalline silicon A charge coupled device (CCD) has a single level electrode of single crystalline silicon on an insulating layer over a surface of a body of single crystalline silicon. The CCD is made by forming a layer of insulating material on a surface of a body of sin... | 04/12/1994 |
| 5298448 | Method of making two-phase buried channel planar gate CCD The present invention is directed to a method of making a true two-phase CCD using a single layer (level) of the conductive material for the gate electrodes to provide a planar structure. The method includes using L-shaped masking layers having a submicro... | 03/29/1994 |
