Bizarre Patents
A hand wearable body squeegee comprising a glove portion, a concave squeegee band, and a linear squeegee band.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7442956 | Organic EL device and electronic apparatus To provide an organic EL device capable of making uniform a dry speed of a liquid material coated in a display area. There is provided an organic EL device in which a plurality of pixels XR, XG, XB is arranged in an effective display... | 10/28/2008 |
| 7439107 | Laser irradiation apparatus, method of irradiating laser light, and method of manufacturing a semiconductor device When the laser light is irradiated with high output in the manufacturing process for a semiconductor device, an attenuator is heated and cause a deformation due to the laser light scattered in the attenuator. As a result, the attenuation ratio of the attenuator fluc... | 10/21/2008 |
| 7432141 | Large-grain p-doped polysilicon films for use in thin film transistors A method is disclosed to form a large-grain, lightly p-doped polysilicon film suitable for use as a channel region in thin film transistors. The film is preferably deposited lightly in situ doped with boron atoms by an LPCVD method at temperatures sufficiently low t... | 10/07/2008 |
| 7432140 | Thin film transistor, thin film transistor substrate, and methods for manufacturing the same A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode and a drain electrode. The channel layer is formed on a substrate. Th... | 10/07/2008 |
| 7422935 | Method for manufacturing semiconductor device, and semiconductor device and electronic device It is an object of the present invention to manufacture a semiconductor device easily and to provide a semiconductor device whose cost is reduced. According to the present invention, a thin film integrated circuit provided over a base insulating layer can be prevent... | 09/09/2008 |
| 7416907 | Semiconductor device and method for forming the same A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitr... | 08/26/2008 |
| 7407838 | Method of manufacturing a semiconductor method of manufacturing a thin-film transistor and thin-film transistor A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 μm2 or less. A thin-film tra... | 08/05/2008 |
| 7396765 | Method of fabricating a liquid crystal display device A method of fabricating a liquid crystal display device according to an embodiment of the present invention includes forming first and second conductive layers on a substrate, wherein the first layer is transparent; patterning the second conductive layer and the fir... | 07/08/2008 |
| 7397063 | Semiconductor device A semiconductor device comprises a glass substrate serving as a substrate having an insulated surface and a silicon layer located on a position overlapping with this glass substrate. The silicon layer includes an amorphous gettering region. Preferably, the silicon l... | 07/08/2008 |
| 7396707 | Fabrication method of a semiconductor device A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region havin... | 07/08/2008 |
| 7384860 | Method of manufacturing a semiconductor device The present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-... | 06/10/2008 |
| 7384827 | Method of manufacturing semiconductor device using liquid phase deposition of an interlayer dielectric Exemplary embodiments of the invention provide techniques that enable avoidance of the concentration of an electric field at the edge of a semiconductor film in a semiconductor device such as a thin film transistor, thereby enhancing the reliability. Exemplary embod... | 06/10/2008 |
| 7374983 | Semiconductor device and manufacturing method thereof Manufacture of TFTs corresponding to various circuits makes structures thereof complex, which involves a larger number of manufacturing steps. Such an increase in the number of the manufacturing steps leads to a higher manufacturing cost and a lower manufacturing yi... | 05/20/2008 |
| 7375373 | Thin film transistor array panel A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wire having source electrodes, d... | 05/20/2008 |
| 7348197 | Liquid crystal display device and fabrication method thereof A method for fabricating a liquid crystal display device includes providing first and second substrates; forming an active layer on the first substrate, wherein the active layer includes a source region, a drain region, a channel region, and a storage region; formin... | 03/25/2008 |
| 7342353 | Display device with insulation film and conductive layers arranged in periphery of the substrate The present invention provides a display device which includes signal lines which are formed on an upper surface side of a substrate, an insulation film which is formed such that the film covers the signal lines except for terminal portions of the signal lines, and ... | 03/11/2008 |
| 7317227 | Method for forming pattern of stacked film A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switc... | 01/08/2008 |
| 7317207 | Semiconductor device, method of making the same and liquid crystal display device To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A T... | 01/08/2008 |
| 7312163 | Atomic layer deposition methods, and methods of forming materials over semiconductor substrates The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least... | 12/25/2007 |
| 7307282 | Thin film transistors and semiconductor device The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not lar... | 12/11/2007 |
| 7291523 | Method of manufacturing a semiconductor device After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performe... | 11/06/2007 |
| 7247527 | Method for manufacturing semiconductor device, and laser irradiation apparatus It is an object of the present invention to provide a method for manufacturing a crystalline semiconductor film comprising the steps of crystallizing with the use of the metal element for promoting the crystallization to control the orientation and irradiating the l... | 07/24/2007 |
| 7229872 | Low voltage power MOSFET device and process for its manufacture A trench type power MOSFET has a thin vertical gate oxide along its side walls and a thickened oxide with a rounded bottom at the bottom of the trench to provide a low RDSON and increased VDSMAX and VGSMAX and a reduced Miller capaci... | 06/12/2007 |
| 7214554 | Monitoring the deposition properties of an OLED A method for making an OLED device includes providing a substrate having one or more test regions and one or more device regions, moving the substrate into a least one deposition chamber for deposition of at least one organic layer, and depositing the at least one o... | 05/08/2007 |
| 7211826 | Organic electroluminescent display An organic electroluminescent display includes a substrate having an array portion with pixels, and a pad portion coupled to an external power supply. A semiconductor structure is formed on the substrate with a source electrode, a drain electrode and a pad. A passiv... | 05/01/2007 |
| 7202529 | Field effect transistor A field effect transistor includes a substrate having a doping of a first conductivity type, a drain area in the substrate having a doping of a second conductivity type oppposite the first conductivity type, a source area in the substrate being laterally spaced from... | 04/10/2007 |
| 7195949 | Providing driving current arrangement for OLED device A method of making a current type active matrix OLED device, includes providing a semiconductor layer, a conductive layer, and an insulator layer therebetween over a substrate, providing an organic light emitting diode over either the semiconductor layer or over the... | 03/27/2007 |
| 7192815 | Method of manufacturing a thin film transistor A method of manufacturing a thin film transistor is described. A polysilicon island is formed over a substrate. A gate insulating layer is formed over the substrate to cover the polysilicin island. A gate is formed on the gate insulating layer above the polysilicon ... | 03/20/2007 |
| 7141514 | Selective plasma re-oxidation process using pulsed RF source power A transistor gate selective re-oxidation process includes the steps of introducing into the vacuum chamber containing the semiconductor substrate a process gas that includes oxygen while maintaining a vacuum pressure in the chamber. An oxide insulating layer on the ... | 11/28/2006 |
| 7112476 | Polycrystalline silicon liquid crystal display device and fabrication method thereof A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impur... | 09/26/2006 |
| 7109108 | Method for manufacturing semiconductor device having metal silicide A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidi... | 09/19/2006 |
| 7105855 | Providing driving current arrangement for OLED device A method of making a current type active matrix OLED device, includes providing a semiconductor layer, a conductive layer, and an insulator layer therebetween over a substrate, providing an organic light emitting diode over either the semiconductor layer or over the... | 09/12/2006 |
| 7056774 | Method of manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device. A plurality of device separation regions are formed in an SOI layer of an SOI substrate, a desired impurity is implanted into a body portion of an Si active layer region, and therereafter a gate electrod... | 06/06/2006 |
| 6800540 | Method for crystallizing silicon Disclosed is a method for crystallizing amorphous silicon, in which a substrate on which an amorphous silicon layer is formed is first prepared, and then a mask is disposed above the substrate. The mask is divided into first and second blocks, the first block having... | 10/05/2004 |
| 6703265 | Semiconductor device and method of manufacturing the same The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semicond... | 03/09/2004 |
| 6703268 | Method to fabricate an intrinsic polycrystalline silicon film A process to fabricate a thin film transistor using an intrinsic polycrystalline silicon film, by a method of: preparing a semiconductor assembly; forming an insulation layer on a substrate; forming a first amorphous silicon layer on said insulation layer... | 03/09/2004 |
| 6703264 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen be... | 03/09/2004 |
| 6699738 | Semiconductor doping method and liquid crystal display device fabricating method using the same A semiconductor doping method includes steps of forming an insulation layer on a substrate, forming a semiconductor layer on the insulation layer, forming a photoresist layer on the insulation layer, patterning the photoresist layer to provide a portion o... | 03/02/2004 |
| 6695955 | Method of forming polycrystalline silicon for liquid crystal display device A method of forming polycrystalline silicon for a liquid crystal display device is disclosed in the present invention. The method includes forming an amorphous silicon layer on a substrate, forming a plurality of catalytic metal clusters on the amorphous ... | 02/24/2004 |
| 6693324 | Semiconductor device having a thin film transistor and manufacturing method thereof A semiconductor layer has one end placed on top of a first conductive layer and in contact with the first conductive layer, and the other end placed on top of a second conductive layer and in contact with the second conductive layer. At the central portio... | 02/17/2004 |
