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"I watched his countenance closely, to see if he was not deranged ... and I was assured by other senators after he left the room that they had no confidence in it."
U.S. Senator Smith of Indiana ; After seeing Samuel Morse demonstrate the telegraph.
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| Number | Title | Issue Date |
| 7276754 | Annular gate and technique for fabricating an annular gate A memory structure having a vertically oriented access transistor with an annular gate region and a method for fabricating the structure. More specifically, a transistor is fabricated such that the channel of the transistor extends outward with respect to the surfac... | 10/02/2007 |
| 7135739 | Vertical-type metal insulator semiconductor field effect transistor device, and production method for manufacturing such transistor device In a vertical-type metal insulator field effect transistor device having a first conductivity type drain region layer, a plurality of second conductivity type base regions are produced and arranged in the first conductivity type drain region layer, and a first condu... | 11/14/2006 |
| 6686613 | Punch through type power device A negative buffer layer and a positive collector layer are formed on a side of one surface of a semiconductor substrate. The positive collector layer is set to have a low dose amount and set shallow so that a low injection efficiency emitter structure is ... | 02/03/2004 |
| 6683343 | High voltage semiconductor device having two buffer layer In an IGBT, an n buffer layer is formed under an n- high resistance layer in which a MOS gate structure is formed. An n+ buffer layer is formed between the n buffer layer and a p+ drain layer. Since the p+ drain... | 01/27/2004 |
| 6683347 | Semiconductor device with alternating conductivity type layer and method of manufacturing the same A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on- resistance while maintaining a high breakdow... | 01/27/2004 |
| 6674125 | Semiconductor power component and a corresponding manufacturing method A semiconductor power component is described having a rear-side anode contact, a rear-side emitter region of a first conductivity type, which is connected to the rear-side anode contact, a drift region, which is connected to the rear-side emitter region a... | 01/06/2004 |
| 6670244 | Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity A method is provided for fabricating a body region of a first conduction type for a vertical MOS transistor configuration in a semiconductor body such that the body region has a reduced resistivity without a corresponding reduction in the breakdown voltag... | 12/30/2003 |
| 6649981 | High breakdown voltage semiconductor device A semiconductor device comprises a first base layer for providing a PT-IGBT or IEGT structure, which includes a buffer layer and a collector layer provided in the buffer layer. A first activation rate, defined by an activated first conductivity type impur... | 11/18/2003 |
| 6620653 | Semiconductor device and method of manufacturing the same A negative buffer layer and a positive collector layer are formed on a side of one surface of a semiconductor substrate. The positive collector layer is set to have a low dose amount and set shallow so that a low injection efficiency emitter structure is ... | 09/16/2003 |
| 6621120 | Semiconductor device A semiconductor device constituting an IGBT exhibits low losses yet can be manufactured using an inexpensive wafer and with high yields, and exhibits low losses. The IGBT is produced by using a wafer, for example an FZ wafer, that is cut form an ingot and... | 09/16/2003 |
| 6610572 | Semiconductor device and method for manufacturing the same A semiconductor device is provided which can be manufactured even by using an inexpensive FZ wafer in a wafer process and still has a sharp inclination of a high impurity concentration in a high impurity concentration layer at the outermost portion of the... | 08/26/2003 |
| 6566690 | Single feature size MOS technology power device A MOS technology power device includes a semiconductor material layer of a first conductivity type, a conductive insulated gate layer covering the semiconductor material layer, and a plurality of elementary functional units. The conductive insulated gate ... | 05/20/2003 |
| 6563170 | Insulated gate bipolar transistor An insulated gate bipolar transistor (IGBT) and a method for manufacturing the same is provided. This method is capable of preventing a latch-up and improving a short current characteristic. In the IGBT, a second conductive type semiconductor layer is for... | 05/13/2003 |
| 6562705 | Method and apparatus for manufacturing semiconductor element A laser heating apparatus for forming an electrode on one surface of an Si chip provided on an Si wafer, thereby producing a semiconductor element, comprises a high vacuum chamber having a light transmission window, an XY table contained in the high vacuu... | 05/13/2003 |
| 6559023 | Method of fabricating a semiconductor device with phosphorous and boron ion implantation, and by annealing to control impurity concentration thereof A method for manufacturing a semiconductor device constituting an JGHT is provided that allows to manufacture the device using an inexpensive wafer and with high yields, and achieves low losses. Specifically, after an emitter electrode is formed, a revers... | 05/06/2003 |
| 6551909 | Semiconductor device with alternating conductivity type layer and method of manufacturing the same A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on-resistance while maintaining a high breakdown... | 04/22/2003 |
| 6501128 | Insulated gate transistor and the method of manufacturing the same An IGBT that exhibits a low on-voltage and a sufficient short circuit withstand capability and to provide a method of manufacturing such an IGBT. The p-type well region and the n-type emitter region are not formed by the self-alignment technique using the... | 12/31/2002 |
| 6495421 | Manufacture of semiconductor material and devices using that material A method is described of manufacturing a semiconductor material having a zone (200) with p-conductivity type and n-conductivity type regions with dopant concentrations and dimensions such that, when the n- and p-conductivity type regions are depleted of f... | 12/17/2002 |
| 6482681 | Hydrogen implant for buffer zone of punch-through non epi IGBT An IGBT is formed in a thin (less than 250 microns thick) float zone silicon wafer using a hydrogen implant to form an N+ buffer layer at the bottom of the wafer. A weak anode is formed on the bottom of the wafer. A single hydrogen implant, or ... | 11/19/2002 |
| 6468866 | Single feature size MOS technology power device A MOS technology power device comprises a semiconductor material layer of a first conductivity type, a conductive insulated gate layer covering the semiconductor material layer, and a plurality of elementary functional units. The conductive insulated gate... | 10/22/2002 |
| 6452219 | Insulated gate bipolar transistor and method of fabricating the same An IGBT having a buffer layer for shortening the turn-off time and for preventing the latching up is improved. The buffer layer of the present invention is not bare at the edge of a diced cross-section of the IGBT chip. According to this construction, a w... | 09/17/2002 |
| 6448588 | Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode An insulated gate bipolar transistor having a high breakdown voltage in a reverse blocking mode and a method for fabricating the same are provided. The insulated gate bipolar transistor includes a relatively low-concentration lower buffer layer and a rela... | 09/10/2002 |
| 6437419 | Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall spacers on the ends of the gate structures. The emitter resist... | 08/20/2002 |
| 6359309 | Power MOSFET and IGBT with optimized on-resistance and breakdown voltage A MOSFET and IGBT are described that exhibit high breakdown voltage together with low on-resistance. This is achieved by providing an N type shunt that extends from the N+ drain (for power MOSFETs) or P+ emitter (for IGBTs), through the N- region to a sho... | 03/19/2002 |
| 6271061 | Fabrication of insulated gate bipolar devices A semiconductor power device comprising an insulated gate bipolar transistor, of the type which comprises a semiconductor substrate with a first type of conductivity and an overlying epitaxial layer with a second type of conductivity, opposite from the fi... | 08/07/2001 |
| 6242288 | Anneal-free process for forming weak collector The collector (anode) of a non punch through IGBT formed in a float zone silicon monocrystaline wafer is formed with a DMOS top structure and is thereafter ground at its bottom surface to a less than 250 micron thickness. A shallow P type implant is then ... | 06/05/2001 |
| 6229196 | Semiconductor device and fabrication method thereof The semiconductor device includes a semiconductor base body (11) formed of a damaged layer (102) serving as a gettering layer, a P+ collector layer (103), an N+ buffer layer (104), and an N- layer (105) laid one on top of ... | 05/08/2001 |
| 6218712 | Semiconductor device and method of manufacturing same A semiconductor device includes a pair of second semiconductor regions (5) selectively formed in predetermined spaced apart relation in a first semiconductor region (3), and a silicide film (8) formed in an upper main surface of the first semiconductor re... | 04/17/2001 |
| 6204097 | Semiconductor device and method of manufacture A semiconductor device (10) having a termination structure (25) and a reduced on-resistance. The termination structure (25) is fabricated using the same processing steps that were used for manufacturing an active device region (21). The termination struct... | 03/20/2001 |
| 6198115 | IGBT with reduced forward voltage drop and reduced switching loss The boundary between the P type silicon base and N+ buffer layer of an IGBT is intentionally damaged, as by a germanium implant, to create well defined and located damage sites for reducing lifetime in the silicon.... | 03/06/2001 |
| 6190970 | Method of making power MOSFET and IGBT with optimized on-resistance and breakdown voltage A MOSFET and IGBT are described that exhibit high breakdown voltage together with low on-resistance. This is achieved by providing an N type shunt that extends from the N+ drain (for power MOSFETs) or P+ emitter (for IGBTs), through the N- region to a sho... | 02/20/2001 |
| 6184555 | Field effect-controlled semiconductor component The invention relates to a field effect-controllable semiconductor component of vertical or lateral design i.e. MOSFETs and IGBTs. In this case, depletion zones and complementary depletion zones of opposite conduction types are introduced in the source-dr... | 02/06/2001 |
| 6168981 | Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices A method and apparatus for the localized reduction of the lifetime of charge carriers in integrated electronic devices. The method comprises the step of implanting ions, at a high dosage and at a high energy level, of a noble gas, preferably helium, in th... | 01/02/2001 |
| 6165821 | P channel radhard device with boron diffused P-type polysilicon gate A MOS gated device is resistant to both high radiation and SEE environments. Spaced, N-type body regions are formed in the surface of a P-type substrate of a semiconductor wafer. P-type dopants are introduced into the surface within each of the channel re... | 12/26/2000 |
| 6162665 | High voltage transistors and thyristors A high voltage transistor or thyristor having a base layer which is a thinned neutron transmuted wafer 102, 152 instead of a diffused or epitaxially grown base layer. The neutron transmuted wafer has high resistivity and a desired thickness while the laye... | 12/19/2000 |
| 6159805 | Semiconductor electronic device with autoaligned polysilicon and silicide control terminal An electronic semiconductor device (20) with a control electrode (19) consisting of self-aligned polycrystalline silicon (4) and silicide (12), of the type in which said control electrode (19) is formed above a portion (1) of semiconductor material which ... | 12/12/2000 |
| 6146947 | Insulated gate type field effect transistor and method of manufacturing the same In an insulated gate type field effect transistor and a manufacturing method of the same, a diffusion region is formed in a semiconductor substrate under an oxidizing atmosphere by thermal diffusion, and a first conductivity type semiconductor layer is fo... | 11/14/2000 |
| 6104062 | Semiconductor device having reduced effective substrate resistivity and associated methods A semiconductor device includes at least one device active region formed in a first surface of a semiconductor substrate, an electrical contact layer on a second surface of the semiconductor substrate, and at least one resistivity-lowering body positioned... | 08/15/2000 |
| 6072199 | Insulated gate bipolar transistor A insulated gate bipolar transistor comprising a semiconductor substrate layer having an impurity concentration of not less than 4.0×1013 /cm3, and being substantially free of lifetime killers.... | 06/06/2000 |
| 6066542 | Method for the manufacture of a power semiconductor component Component structures of, for example, IGBTs are manufactured on the respective top sides of two substrates, the substrates are thinned proceeding from their respective back sides, and, after polishing, the back sides of the thinned substrates are durably ... | 05/23/2000 |
