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...When G.G. Hubbard learned of his future son-in-law's invention, he called it "only a toy." His daughter was engaged to a young man named Alexander Graham Bell.
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| Number | Title | Issue Date |
| 7378324 | Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same Bipolar transistors and methods of forming the bipolar transistors. The method including forming a P-type collector in a silicon substrate; forming an intrinsic base on the collector, the intrinsic base including a first N-type dopant species, germanium and carbon; ... | 05/27/2008 |
| 7368361 | Bipolar junction transistors and method of manufacturing the same A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the collector region. An emitter region is defined at least in part by impuriti... | 05/06/2008 |
| 7364990 | Epitaxial crystal growth process in the manufacturing of a semiconductor device First and second preliminary epitaxial layers are grown from single-crystalline seeds in openings in an insulation layer until the first and second epitaxial layers are connected to each other. While the first and second preliminary epitaxial layers are being grown,... | 04/29/2008 |
| 7348246 | Methods of fabricating non-volatile memory devices including divided charge storage structures A semiconductor memory device includes a substrate having first and second source/drain regions therein and a channel region therebetween. The device also includes first and second charge storage layers on the channel region, a first insulating layer on the channel ... | 03/25/2008 |
| 7341878 | Wavelength-converted semiconductor light emitting device A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently extract light from the light emitting region into the phosphor. The phosp... | 03/11/2008 |
| 7323390 | Semiconductor device and method for production thereof The semiconductor device according to the invention includes a substrate, a field insulating region which delimits an active region of the semiconductor substrate, a collector, at least one collector contact region associated with the collector, and a base with an a... | 01/29/2008 |
| 7282418 | Method for fabricating a self-aligned bipolar transistor without spacers According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a sacrificial post situated on the top surface of the base. The bipolar transistor also comprises a conformal layer situated o... | 10/16/2007 |
| 7265409 | Non-volatile semiconductor memory A non-volatile semiconductor memory having a memory transistor including a stacked-layer film formed between a semiconductor substrate and a gate electrode and having a charge storage ability, a first conductivity type region of the semiconductor substrate in which ... | 09/04/2007 |
| 6696342 | Small emitter and base-collector bi-polar transistor In a high speed BJT device, the method for producing the device includes forming a self-aligned BJT through the use of a single mask by making use of a single layer of polysilicon. The method includes forming a window in the polysilicon to define a base p... | 02/24/2004 |
| 6686250 | Method of forming self-aligned bipolar transistor A self-aligned bipolar transistor and a method of formation thereof are provided. The bipolar transistor has an emitter region characterized by a y-shaped structure formed from bilayer polysilicon. The bilayer polysilicon includes a first polysilicon emit... | 02/03/2004 |
| 6680522 | Semiconductor device with reduced electrical variation An object of the invention is to minimize variation in characteristics of a vertical bipolar transistor. An insulating side wall spacer composed of a silicon nitride film 10 and a silicon oxide film 9 is formed on the side surface of an opening 101 formed... | 01/20/2004 |
| 6667521 | Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit A process for forming a bipolar transistor with a raised extrinsic base, an emitter, and a collector integrated with a CMOS circuit with a gate. An intermediate semiconductor structure is provided having CMOS and bipolar areas. An intrinsic base layer is ... | 12/23/2003 |
| 6642553 | Bipolar transistor and method for producing same The invention relates to a bipolar transistor and a method for producing same. The aim of the invention is to provide a bipolar transistor and a method for producing same, which during the use of a single-process poly-silicon technology with differential ... | 11/04/2003 |
| 6635545 | Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistor The bipolar transistor is produced such that a connection region of its base is provided with a silicide layer, so that a base resistance of the bipolar transistor is small. No silicide layer is produced between an emitter and an emitter contact and betwe... | 10/21/2003 |
| 6617220 | Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insul... | 09/09/2003 |
| 6600199 | Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity The preferred embodiment of the present invention provides a buried layer that improves the latch up immunity of digital devices while providing isolation structures that provide noise isolation for both the digital and analog devices. The buried layer of... | 07/29/2003 |
| 6589849 | Method for fabricating epitaxy base bipolar transistor A method for fabricating bipolar transistor having insitu-formed epitaxial base is disclosed herein, the method including the following steps. The first step of the key feature according to one preferred embodiment of the present invention is to use a fir... | 07/08/2003 |
| 6579771 | Self aligned compact bipolar junction transistor layout, and method of making same The invention relates to a process of forming a bipolar junction transistor (BJT) that includes forming a topology over a substrate. Thereafter, a spacer is formed at the topology. A base layer is formed from epitaxial silicon above the spacer and at the ... | 06/17/2003 |
| 6579774 | Semiconductor device fabrication method A semiconductor device fabrication method includes the steps of forming a first insulation layer and a first semiconductor layer sequentially on a semiconductor substrate having a buried diffusion region therein. A second insulation layer is formed on the... | 06/17/2003 |
| 6562688 | Method of manufacturing a bipolar device Disclosed are a method for manufacturing a homojunction or heterojunction bipolar device and a structure of the bipolar device manufactured by the method. The method comprises steps of forming a collector on a substrate including a buried collector to be ... | 05/13/2003 |
| 6552374 | Method of manufacturing bipolar device and structure thereof Disclosed are a method for forming a base layer by epitaxial growth technology of a heterojunction bipolar device and a structure of the bipolar device manufactured by the method. The method comprises steps of depositing an insulation film containing sili... | 04/22/2003 |
| 6521504 | Semiconductor device and method of fabricating the same There is provided a method of fabricating a semiconductor device, including the steps of (a) forming a first conductivity type base region in a second conductivity type collector region by molecular beam epitaxy (MBE), (b) forming an emitter region in the... | 02/18/2003 |
| 6521974 | Bipolar transistor and manufacturing method thereof A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si--Ge and a base leading-out electrode are connected via a link base made of polycrystal Si--Ge by doping at high concentration, furt... | 02/18/2003 |
| 6506656 | Stepped collector implant and method for fabrication The present invention provides a unique device structure and method that provides increased transistor performance in integrated bipolar circuit devices. The preferred embodiment of the present invention provides improved high speed performance with a ste... | 01/14/2003 |
| 6492237 | Method of forming an NPN device A method of forming an NPN semiconductor device includes the steps of forming a collector region within a substrate, forming a base region over the collector region, and forming an oxide-nitride-oxide stack over the base region. Once these three structure... | 12/10/2002 |
| 6492238 | Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit A process for forming a bipolar transistor with a raised extrinsic base, an emitter, and a collector integrated with a CMOS circuit with a gate. An intermediate semiconductor structure is provided having CMOS and bipolar areas. An intrinsic base layer is ... | 12/10/2002 |
| 6489212 | Semiconductor device and method for fabricating the same A semiconductor device includes a semiconductor substrate, an insulating film having one portion below a surface of the semiconductor substrate and the other portion on the semiconductor substrate in a second region to the same thickness as the insulating... | 12/03/2002 |
| 6489211 | Method of manufacturing a semiconductor component A method of manufacturing a semiconductor component includes providing a composite substrate (300) with a dielectric portion and a semiconductor portion and growing an epitaxial layer (400) over the composite substrate. The epitaxial layer has a polycryst... | 12/03/2002 |
| 6482710 | Bipolar transistor and manufacting method thereof A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si--Ge and a base leading-out electrode are connected via a link base made of polycrystal Si--Ge by doping at high concentration, furt... | 11/19/2002 |
| 6475848 | Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistor A low-power high-frequency bipolar transistor is formed to have a small self-aligned base region that reduces the base-to-collector capacitance, and small self-aligned base and emitter contacts that reduce the base-to-emitter capacitance and the base resi... | 11/05/2002 |
| 6472287 | Manufacturing method of semiconductor with a cleansing agent The present invention aims to suppress certainly the single-crystallizing in polycrystalline silicon that is to compose an emitter electrode, as well as to prevent the interface oxide film from remaining, when a heat treatment is conducted to diffuse dopa... | 10/29/2002 |
| 6465318 | Bipolar transistor and method for producing same This invention relates to a bi-polar transistor and a procedure for its manufacture. The task of the invention is to propose a bi-polar transistor and a procedure for its manufacture that eliminates the disadvantages of conventional arrangements for a sim... | 10/15/2002 |
| 6462397 | Bipolar junction device The present invention is related to a bipolar transistor in which the in-situ doped epitaxial Si or SiGe base layer is used instead of using an ion-implanted Si base, in order to achieve higher cutoff frequency. The SiGe base having the narrower energy ba... | 10/08/2002 |
| 6459140 | Indium-enhanced bipolar transistor A method to improve the characteristics of bipolar silicon high-frequency transistor by adding indium into the base of the transistor is described. Instead of replacing boron in the base with indium to improve the beta-Early voltage product, at the price ... | 10/01/2002 |
| 6444536 | Method for fabricating bipolar transistors In accordance with the invention, a bipolar transistor is fabricated by disposing a sacrificial layer over the conventional semiconductor workpiece. The sacrificial layer is patterned into a stripe corresponding to the emitter stripe, and the base contact... | 09/03/2002 |
| 6440810 | Method in the fabrication of a silicon bipolar transistor In the fabrication of a silicon bipolar transistor, a method for forming base regions and for opening an emitter window is provided. A silicon substrate is provided with suitable device isolation. A first base region is formed in or on top of the substrat... | 08/27/2002 |
| 6436781 | High speed and low parasitic capacitance semiconductor device and method for fabricating the same A semiconductor device including a bipolar transistor formed by epitaxial growth or ion implantation is provided has an epitaxial silicon collector layer, a base region directly under an emitter defined as an intrinsic base and a peripheral region thereof... | 08/20/2002 |
| 6414372 | Bipolar transistor having lightly doped epitaxial collector region constant in dopant impurity and process of fabrication thereof A bipolar transistor has a lightly doped n-type single crystal silicon layer epitaxially grown in a recess formed in a heavily doped n-type impurity region after a selective growth of a thick field oxide layer, a base region, an emitter region and a colle... | 07/02/2002 |
| 6384469 | Vertical bipolar transistor, in particular with an SiGe heterojunction base, and fabrication process The semiconductor region of an intrinsic collector is surrounded with a lateral insulating region. A semi-conducting layer comprising a SiGe heterojunction is partially located between the transmitter and the intrinsic collector and extends on either side... | 05/07/2002 |
| 6380017 | Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistor A low-power high-frequency bipolar transistor is formed to have a small self-aligned intrinsic base region, and small self-aligned extrinsic base and emitter regions that contact the intrinsic base region. The small regions reduce the base resistance, the... | 04/30/2002 |
