Quotables
"There is practically no chance communications space satellites will be used to provide better telephone, telegraph, television, or radio service inside the United States."
T. Craven, FCC Commissioner ; 1961
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7358132 | Self-aligned bipolar semiconductor device and fabrication method thereof A self-aligned bipolar semiconductor device and a fabrication method thereof are provided. After a silicon layer and a collector contact are formed on a buried collector layer, an oxide dummy pattern is formed on the silicon layer to define both an extrinsic base an... | 04/15/2008 |
| 7319061 | Method for fabricating electronic device In a method for fabricating an electronic device including a transistor with a drain extension structure, a correspondence between a size of a gate electrode of the transistor and ion implantation conditions or heat treatment conditions for forming the drain extensi... | 01/15/2008 |
| 7297589 | Transistor device and method A method for making a heterojunction bipolar transistor includes the following steps: forming a heterojunction bipolar transistor by depositing, on a substrate, subcollector, collector, base, and emitter regions of semiconductor material; the step of depositing the ... | 11/20/2007 |
| 7282416 | Method for fabricating electronic device In a method for fabricating an electronic device including a transistor with a drain extension structure, a correspondence between a size of a gate electrode of the transistor and ion implantation conditions or heat treatment conditions for forming the drain extensi... | 10/16/2007 |
| 7242071 | Semiconductor structure A structure comprises a deep sub-collector buried in a first epitaxial layer and a near sub-collector buried in a second epitaxial layer. The structure further comprises a deep trench isolation structure isolating a region which is substantially above the deep sub-c... | 07/10/2007 |
| 7202515 | Heterojunction bipolar transistor and manufacturing method thereof In the method for manufacturing a heterojunction bipolar transistor, a collector contact layer, a collector layer, a base layer, a base protection layer, an emitter layer, an emitter contact layer, and a WSi layer are sequentially formed on a substrate. A resist pat... | 04/10/2007 |
| 7154118 | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication A method of a bulk tri-gate transistor having stained enhanced mobility and its method of fabrication. The present invention is a nonplanar transistor having a strained enhanced mobility and its method of fabrication. The transistor has a semiconductor body formed o... | 12/26/2006 |
| 7132701 | Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Provided is a process for forming a contact for a compound semiconductor device without electrically shorting the device. In one embodiment, a highly doped compound semiconductor material is electrically connected to a compound semiconductor material of the same con... | 11/07/2006 |
| 7118981 | Method of fabricating an integrated silicon-germanium heterobipolar transistor and an integrated silicon-germanium heterobipolar transistor In a method of fabricating an integrated silicon-germanium heterobipolar transistor a silicon dioxide layer arranged between a silicon-germanium base layer and a silicon emitter layer is formed by means of Rapid Thermal Processing (RTP) to ensure enhanced component ... | 10/10/2006 |
| 6699765 | Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer Embodiments of a bipolar transistor are disclosed, along with methods for making the transistor. An exemplary transistor includes a collector region in a semiconductor substrate, a base layer overlying the collector region and bound by a field oxide layer... | 03/02/2004 |
| 6699741 | Single poly bipolar transistor and method that uses a selectively epitaxially grown highly-boron-doped silicon layer as a diffusion source for an extrinsic base region A high frequency bipolar transistor that has a silicon germanium intrinsic base region is formed in a semiconductor fabrication process that forms the extrinsic base regions after the intrinsic base region has been formed. The extrinsic base regions are e... | 03/02/2004 |
| 6696342 | Small emitter and base-collector bi-polar transistor In a high speed BJT device, the method for producing the device includes forming a self-aligned BJT through the use of a single mask by making use of a single layer of polysilicon. The method includes forming a window in the polysilicon to define a base p... | 02/24/2004 |
| 6686640 | Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor A varactor includes a semiconductor substrate of a first conductivity type, a high-concentration buried collector region of a second conductivity type formed in an upper portion of the semiconductor substrate, a collector region of the second conductivity... | 02/03/2004 |
| 6686250 | Method of forming self-aligned bipolar transistor A self-aligned bipolar transistor and a method of formation thereof are provided. The bipolar transistor has an emitter region characterized by a y-shaped structure formed from bilayer polysilicon. The bilayer polysilicon includes a first polysilicon emit... | 02/03/2004 |
| 6683366 | Bipolar transistor and related structure According to one exemplary embodiment, a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises a base having a top surface. The HBT further comprises a first inner spacer and a second inner spacer situated on the top surface o... | 01/27/2004 |
| 6680522 | Semiconductor device with reduced electrical variation An object of the invention is to minimize variation in characteristics of a vertical bipolar transistor. An insulating side wall spacer composed of a silicon nitride film 10 and a silicon oxide film 9 is formed on the side surface of an opening 101 formed... | 01/20/2004 |
| 6680235 | Method for fabricating a selective eptaxial HBT emitter According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a top surface. The heterojunction bipolar transistor further comprises an epitaxial emitter selectively situated on the top surface of the base. For example... | 01/20/2004 |
| 6674149 | Bipolar transistor device having phosphorous A Si1-x Gex layer 111b functioning as the base composed of an i-Si1-x Gex layer and a p+ Si1-x Gex layer is formed on a collector layer 102, and a Si cap layer 111a as the emitter is ... | 01/06/2004 |
| 6674150 | Heterojunction bipolar transistor and method for fabricating the same A heterojunction bipolar transistor is fabricated by stacking a Si collector layer, a SiGeC base layer and a Si emitter layer in this order. By making the amount of a lattice strain in the SiGeC base layer on the Si collector layer 1.0% or less, the band ... | 01/06/2004 |
| 6674144 | Process for forming damascene-type isolation structure for integrated circuit Isolation of a heterojunction bipolar transistor device in an integrated circuit is accomplished by forming the device within a trench in dielectric material overlying single crystal silicon. Precise control over the thickness of the initially-formed diel... | 01/06/2004 |
| 6674102 | Sti pull-down to control SiGe facet growth A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each... | 01/06/2004 |
| 6673688 | Method for eliminating collector-base band gap in an HBT According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of germanium, where the concentration of germanium decreases between a first depth and a second depth in the base. According to this exempla... | 01/06/2004 |
| 6670654 | Silicon germanium heterojunction bipolar transistor with carbon incorporation A silicon germanium heterojunction bipolar transistor device having a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein... | 12/30/2003 |
| 6667489 | Heterojunction bipolar transistor and method for production thereof A high-speed heterojunction bipolar transistor in a large injection of electrons from the emitter and a method for production thereof. In a typical example of the SiGeC heterojunction bipolar transistor, the collector has a layer of n-type single-crystal ... | 12/23/2003 |
| 6664574 | Heterojunction semiconductor device and method of manufacturing A semiconductor component (100) includes a semiconductor substrate (16) that is formed with trench (27). A semiconductor layer (20) is formed in the trench for coupling a control signal (VB) through a sidewall (25) of the trench to route a curr... | 12/16/2003 |
| 6660607 | Method for fabricating heterojunction bipolar transistors A method for fabricating a heterojunction bipolar transistor having collector, base and emitter regions is disclosed. In an exemplary embodiment of the invention, the method includes forming a silicon epitaxial layer upon a substrate, the silicon epitaxia... | 12/09/2003 |
| 6660623 | Semiconductor device and method of manufacturing the same A semiconductor device comprises an n-conductive type Si substrate, a n-conductive type Si film formed on the n-conductive type Si substrate, a p-conductive type SiGe film formed on the n-conductive type Si film, a p-conductive type Si film formed on the ... | 12/09/2003 |
| 6656809 | Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics A method of fabricating a SiGe heterojunction bipolar transistor (HBT) is provided which results in a SiGe HBT that has a controllable current gain and improved breakdown voltage. The SiGe HBT having these characteristics is fabricated by forming an in-si... | 12/02/2003 |
| 6656811 | Carbide emitter mask etch stop Bipolar transistors and methods for fabricating bipolar transistors are disclosed wherein an emitter-base dielectric stack is formed between emitter and base structures, comprising a carbide layer situated between first and second oxide layers. The carbid... | 12/02/2003 |
| 6653714 | Lateral bipolar transistor A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to ... | 11/25/2003 |
| 6649482 | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor A low-power bipolar transistor is formed to have a silicon germanium base region, an intrinsic emitter region with a sub-lithographic width, and an oxide layer that is self aligned to an overlying extrinsic emitter. The silicon germanium base region incre... | 11/18/2003 |
| 6645819 | Self-aligned fabrication method for a semiconductor device One embodiment of the present invention provides a method of fabricating a semiconductor device including the steps of forming a first semiconductor layer; forming a second semiconductor layer over the first semiconductor layer; forming a mask over a firs... | 11/11/2003 |
| 6642096 | Bipolar transistor manufacturing A method of manufacturing a bipolar transistor in a single-crystal silicon substrate of a first conductivity type, including a step of carbon implantation at the substrate surface followed by an anneal step, before forming, by epitaxy, the transistor base... | 11/04/2003 |
| 6642553 | Bipolar transistor and method for producing same The invention relates to a bipolar transistor and a method for producing same. The aim of the invention is to provide a bipolar transistor and a method for producing same, which during the use of a single-process poly-silicon technology with differential ... | 11/04/2003 |
| 6639256 | Structure for eliminating collector-base band gap discontinuity in an HBT According to one exemplary embodiment, a heterojunction bipolar transistor comprises a base having a concentration of germanium, where the concentration of germanium decreases between a first depth and a second depth in the base. According to this exempla... | 10/28/2003 |
| 6638819 | Method for fabricating interfacial oxide in a transistor and related structure A gas is supplied at a certain partial pressure for a chemical reaction with a top surface of a base in a transistor. The top surface of the base is heated to a certain temperature to promote the chemical reaction. For example, the gas can be oxygen, the ... | 10/28/2003 |
| 6635545 | Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistor The bipolar transistor is produced such that a connection region of its base is provided with a silicide layer, so that a base resistance of the bipolar transistor is small. No silicide layer is produced between an emitter and an emitter contact and betwe... | 10/21/2003 |
| 6633075 | Heterojunction bipolar transistor and method for fabricating the same A heterojunction bipolar transistor includes an emitter layer, a base layer and a collector layer laminated on a top surface of a semiconductor substrate, and a heat sink layer made of a metal and provided on a rear surface of the substrate. A via hole is... | 10/14/2003 |
| 6627972 | Vertical bipolar transistor The invention relates to a vertical bipolar transistor and a method for the production thereof. The aim of the invention is to produce a vertical bipolar transistor and to disclose a method for the production thereof, whereby excellent high frequency prop... | 09/30/2003 |
| 6624017 | Manufacturing process of a germanium implanted HBT bipolar transistor A process fabricates a vertical structure high carrier mobility transistor on a substrate of crystalline silicon doped with impurities of the N type, the transistor having a collector region located at a lower portion of the substrate. The process include... | 09/23/2003 |
