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| Number | Title | Issue Date |
| 7419849 | Method for producing single electron semiconductor element The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent pr... | 09/02/2008 |
| 7414298 | Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure. A base layer is formed from epitaxial silicon that is disposed in the ... | 08/19/2008 |
| 7364960 | Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 04/29/2008 |
| 7355202 | Thin-film transistor A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ... | 04/08/2008 |
| 7291527 | Work function control of metals Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal, which is a ‘mid gap’ metal, is manipulated in first and second regions by second and third metals, respectively, to move the work function of the first... | 11/06/2007 |
| 6624482 | Method for creating a useful bipolar junction transistor from a parasitic bipolar junction transistor on a MOSFET The present invention creates a useful BJT by increasing the gain associated with the parasitic BJT on an SOI or bulk type MOSFET. This is done by masking those manufacturing steps that minimize the BJT's beta value, by intentionally increasing the beta v... | 09/23/2003 |
| 6404001 | Multilevel conductive interconnections including capacitor electrodes for integrated circuit devices Conductive plugs are formed in a first insulating layer on an integrated circuit substrate. A first conductive layer, a capacitor dielectric film and a second conductive layer are formed on the first insulating layer including on the conductive plugs. The... | 06/11/2002 |
| 6380022 | Method for creating a useful biopolar junction transistor from a parasitic bipolar junction transistor on a MOSFET The present invention creates a useful BJT by increasing the gain associated with the parasitic BJT on an SOI or bulk type MOSFET. This is done by masking those manufacturing steps that minimize the BJT's beta value, by intentionally increasing the beta v... | 04/30/2002 |
| 6320211 | Semiconductor device and electronic device by use of the semiconductor A semiconductor device is provided with a collector region having a first material of a first conductivity type. A base region is provided having a second material of the opposite conductivity type, and an emitter region is also provided having a third ma... | 11/20/2001 |
| 6218254 | Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices A method of fabricating a self-aligned bipolar junction transistor in a semiconductor structure having a first layer of silicon carbide generally having a first conductivity type and a second layer of silicon carbide generally having a second conductivity... | 04/17/2001 |
| 6208007 | Buried layer in a semiconductor formed by bonding Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create t... | 03/27/2001 |
| 6015980 | Metal layered semiconductor laser By using fusion of a heat spreader layer, a large bandwidth, high power semiconductor laser can be fabricated. The use of multiple metals with low thermal resistance allows for higher power because heat flow is conducted away from the active region easily... | 01/18/2000 |
| 5977604 | Buried layer in a semiconductor formed by bonding Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create t... | 11/02/1999 |
| 5486704 | Semiconductor device and electronic device by use of the semiconductor A semiconductor devive comprises; a collector region of first conductivity type; a base region of second conductivity type; an emitter region of the first conductivity type; a thin film provided on the emitter region and capable of flowing therein a tunnel current;... | 01/23/1996 |
| 5404043 | Semiconductor devices of the planar type bipolar transistors and combination bipolar/MIS type transistors A sidewall construction is utilized in the fabrication of semiconductor devices comprising planar type bipolar transistors wherein the width of the sidewall construction can be accuracy controlled which, in turn, controls accuracy the channel length of th... | 04/04/1995 |
| 5281544 | Method of manufacturing planar type polar transistors and combination bipolar/MIS type transistors A sidewall construction is utilized in the method of manufacture of semiconductor devices comprising planar type bipolar transistors wherein the width of the sidewall construction can be accuracy controlled which, in turn, controls accuracy the channel le... | 01/25/1994 |
| 5272357 | Semiconductor device and electronic device by use of the semiconductor A semiconductor device comprises; a collector region of first conductivity type; a base region of second conductivity type; an emitter region of the first conductivity type; a thin film provided on the emitter region and capable of flowing therein a tunnel current;... | 12/21/1993 |
