Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 7391056 | Chemical sensor using chemically induced electron-hole production at a Schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 06/24/2008 |
| 7323402 | Trench Schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination... | 01/29/2008 |
| 7314770 | Method of making light emitting device with silicon-containing encapsulant A method of making a light emitting device is disclosed. The method includes the steps of providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting dio... | 01/01/2008 |
| 7282429 | Method of manufacturing Schottky diode device Embodiments of the invention provide a method of manufacturing a Schottky diode device. In one embodiment, the method includes: (a) providing a substrate; (b) sequentially forming a gate oxide layer and a polysilicon layer on the substrate; (c) partially oxidizing t... | 10/16/2007 |
| 7268005 | Apparatus and method for stacking laser bars for uniform facet coating An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a ... | 09/11/2007 |
| 6235617 | Semiconductor device and its manufacturing method It is intended to provide a semiconductor device and its manufacturing method in which a high-resistance region maintaining a high resistance even under high temperatures can be made in a nitride III-V compound semiconductor layer having an electric condu... | 05/22/2001 |
| 6111273 | Semiconductor device and its manufacturing method It is intended to provide a semiconductor device and its manufacturing method in which a high-resistance region maintaining a high resistance even under high temperatures can be made in a nitride III-V compound semiconductor layer having an electric condu... | 08/29/2000 |
| 6087702 | Rare-earth schottky diode structure A method for forming a Schottky diode structure is disclosed. The method includes the steps of: a) Providing a substrate; b) forming a rare-earth containing layer over the substrate; and c) forming a metal layer over the rare-earth containing layer. The S... | 07/11/2000 |
| 6037646 | High-frequency GaAs substrate based schottky barrier diodes A Schottky barrier diode and a method for fabricating a Schottky barrier diode that utilizes HBT active device layers. The Schottky barrier diode is formed with a vertically integrated profile on a GaAs substrate, with a subcollector layer and a collector... | 03/14/2000 |
| 5930636 | Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes A Schottky barrier diode and a method for fabricating a Schottky barrier diode that utilizes HBT active device layers. The Schottky barrier diode is formed with a vertically integrated profile on a GaAs substrate, with a subcollector layer and a collector... | 07/27/1999 |
| 5898210 | Semiconductor diode with high turn on and breakdown voltages A Schottky diode having a series of stacked layers starting with a conventional substrate having a semi-insulating GaAs layer and an un-doped GaAs buffer layer. An n-type Si--GaAs channel layer is grown on the GaAs buffer layer. A low-temperature-grown Ga... | 04/27/1999 |
| 5672904 | Schottky carrier diode with plasma treated layer A Schottky barrier diode having improved breakdown characteristics has an n+ semiconductor layer and an n- semiconductor layer provided on the n+ semiconductor layer. The n- semiconductor layer is configured to ... | 09/30/1997 |
| 5622877 | Method for making high-voltage high-speed gallium arsenide power Schottky diode A power GaAs Schottky diode with a chemically deposited Ni barrier having a reverse breakdown voltage of 140 V, a forward voltage drop at 50 A/cm2 of 0.7 V at 23° C., 0.5 V at 150° C. and 0.3 V at 250° C. and having a reverse leakage current... | 04/22/1997 |
| 5298437 | Fabrication process for Schottky barrier diodes on a single poly bipolar process A method for fabricating a diode, for example, for use in a Schottky clamped transistor, which as a process step disposes a layer of oxide between the substrate and the overlying layer of polysilicon which must ultimately be etched away. The oxide layer p... | 03/29/1994 |
| 5221638 | Method of manufacturing a Schottky barrier semiconductor device According to the present invention, there is provided a method of manufacturing a Schottky barrier semiconductor device with lesser variation of barrier height $c;B which may stably be adjusted in a wide range. A Schottky barrier is formed by combinati... | 06/22/1993 |
| 5098858 | Junction between metal and zincblende-type III-V compound semiconductor and manufacturing method thereof The method of manufacturing the metal-semiconductor junction in accordance with the present invention includes the step of forming a 2×2 surface superstructure in an ultrahigh vacuum by removing an oxide layer by means of a heat cleaning at temperatures ... | 03/24/1992 |
| 5075740 | High speed, high voltage schottky semiconductor device A schottky diode is disclosed which has a barrier electrode formed on a semiconductor substrate for creating a schottky barrier therebetween. Also formed on the substrate is a first resistive region which surrounds the barrier electrode. The first resisti... | 12/24/1991 |
| 4871686 | Integrated Schottky diode and transistor An improved means and method is described for forming a Schottky diode integrated with transistors and other devices which is particularly useful where both control circuits and a large power device are on the same chip. Nested N-, P-, N- and P+ regions are fo... | 10/03/1989 |
| 4855796 | Beam lead mixer diode A beam lead diode configuration is described, employing a planar proton bombarded conversion region and a low-permittivity dielectric separator. The diode enjoys the mechanical ruggedness of the conventional planar diodes and the electrical performance of... | 08/08/1989 |
| 4640003 | Method of making planar geometry Schottky diode using oblique evaporation and normal incidence proton bombardment A Schottky diode and method of making same in which a n+ doped layer, an n oped layer and an undoped layer of a semi-insulating material selected from the group consisting of gallium arsenide, aluminum gallium arsenide and indium phosphide is grown consecu... | 02/03/1987 |
| 4541000 | Varactor or mixer diode with surrounding substrate metal contact and top surface isolation A varactor or mixer diode comprises a mesa shaped semiconductor element having a p-n junction barrier layer or retifying junction on its upper face and a substrate contact on its opposite face, the substrate contact extending over the side faces of the se... | 09/10/1985 |
| 4452646 | Method of making planar III-V compound device by ion implantation A planar process and new structure which leads to large scale integration capability by utilizing selective ion implantation into semi-insulating Gallium Arsenide substrates or any other compound semi-conducting material to yield isolated depletion enhanc... | 06/05/1984 |
| 4374012 | Method of making semiconductor device having improved Schottky-barrier junction A semiconductor device having an improved non-diffusive Schottky-barrier junction and metallization layers and method for producing the same. A thin layer of a Schottky-barrier forming metal such as platinum is sputter deposited upon a hot gallium arsenid... | 02/15/1983 |
| 4301233 | Beam lead Schottky barrier diode for operation at millimeter and submillimeter wave frequencies A beam lead gallium arsenide diode having a rectangular junction perimeter conforming to that the beam lead, recovers ninety-five percent of the junction current and provides an almost perfect ideality factor of 1.07. This device is formed on a semi-insul... | 11/17/1981 |
| 4201998 | Devices with Schottky metal contacts filling a depression in a semi-conductor body A Schottky barrier semiconductor device and process for making same is described wherein edge breakdown is avoided by making the rectifying contact in a curved depression in an epitaxial active layer having a nonuniform doping profile. The depression is f... | 05/06/1980 |
| 4197551 | Semiconductor device having improved Schottky-barrier junction A semiconductor device having an improved non-diffusive Schottky-barrier junction and metallization layers and method for producing the same. A thin layer of a Schottky-barrier forming metal such as platinum is sputter deposited upon a hot gallium arsenid... | 04/08/1980 |
| 4143384 | Low parasitic capacitance diode A semiconductor device with active junction area determined by the surface of the floor of a hole etched into a body of semiconductor material. A body of highly doped semiconductor material is overlayed with two layers of semiconductor material of the sam... | 03/06/1979 |
| 4108738 | Method for forming contacts to semiconductor devices A Schottky barrier semiconductor device and process for making same is described wherein edge breakdown is avoided by making the rectifying contact in a curved depression in an epitaxial active layer having a nonuniform doping profile. The depression is f... | 08/22/1978 |
| 4098921 | Tantalum-gallium arsenide Schottky barrier semiconductor device A Schottky barrier semiconductor device wherein the semiconductor is gallium arsenide and the metal electrode is tantalum, passivated by formation of native oxides after the metal-semiconductor junction is made. Tantalum acts as a diffusion shield, enabli... | 07/04/1978 |
