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| Number | Title | Issue Date |
| 7381997 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 06/03/2008 |
| 7368309 | Nitride semiconductor and fabrication method thereof The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present invention comprises a substrate; a GaN-based buffer layer formed in a... | 05/06/2008 |
| 7335927 | Lateral silicided diodes A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the... | 02/26/2008 |
| 7314770 | Method of making light emitting device with silicon-containing encapsulant A method of making a light emitting device is disclosed. The method includes the steps of providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting dio... | 01/01/2008 |
| 7282382 | Method for producing a photodiode contact for a TFA image sensor The invention relates to a method for producing a photodiode contact for a TFA image sensor which includes a photodiode, produced by deposition of a multilayer system and a transparent conductive contact layer on an ASIC circuit that has been coated with an intermed... | 10/16/2007 |
| 7271019 | Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator laye... | 09/18/2007 |
| 7224026 | Nanoelectronic devices and circuits Diode devices with superior and pre-settable characteristics and of nanometric dimensions, comprise etched insulative lines (8, 16, 18) in a conductive substrate to define between the lines charge carrier flow paths, formed as elongate channels (20) at... | 05/29/2007 |
| 7112511 | CMOS image sensor having prism and method for fabricating the same A method for fabricating a CMOS image sensor with a prism includes the steps of: forming a plurality of photodiodes corresponding to respective unit pixels on a substrate; sequentially forming an inter-layer insulation layer and an uppermost metal line on the substr... | 09/26/2006 |
| 5418181 | Method of fabricating diode using grid recess Method of fabricating semiconductor devices includes forming an operation layer for forming elements on a first principal plane of a semiconductor substrate; forming a grid recess for separating the elements on the operation layer; forming a support layer... | 05/23/1995 |
| 5352627 | Monolithic high voltage nonlinear transmission line fabrication process A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus ty... | 10/04/1994 |
| 4872039 | Buried lateral diode and method for making same A diode in a semiconductor body has two laterally adjacent regions. Each region has buried portions. The first and second regions are doped with opposite conductivity type dopants. A buried P-N junction exists where the buried portions meet. Since the jun... | 10/03/1989 |
| 4474623 | Method of passivating a semiconductor body A method for forming a protective layer from surface portions of a mesa-shaped semiconductor to electrically isolate a junction region formed within the semiconductor from external contaminants. A top contact electrode is formed on an upper surface of a s... | 10/02/1984 |
