Famous Patents
Felix Hoffmann, a German chemist, was searching for something to relieve his father's arthritis. In doing so, he "rediscovered" acetylsalicylic acid and in 1900, patented a stable process for developing it. Hence, we have aspirin.
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| Number | Title | Issue Date |
| 7351599 | High-powered light emitting device with improved thermal properties A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some... | 04/01/2008 |
| 7244646 | Pixel design to improve photodiode capacitance and method of forming same A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacen... | 07/17/2007 |
| 6303954 | Semiconductor device with a high-voltage component in semiconductor on insulator A semiconductor device comprises a semiconductor layer on an insulator film that is contiguous to a semiconductor substrate. A component, such as a high-voltage diode, forming region is provided in the semiconductor layer and electrically insulated from o... | 10/16/2001 |
| 6294445 | Single mask process for manufacture of fast recovery diode A single mask process for manufacture of a FRED employs a thick oxide layer over an N type silicon surface and a thin nitride layer over the oxide. A single mask defines FRED device spaced P diffusions. The oxide spanning the P diffusions is laterally etc... | 09/25/2001 |
| 6197649 | Process for manufacturing planar fast recovery diode using reduced number of masking steps A fast recovery diode (FRED) is fabricated by a process using a reduced number of masking steps. The FRED is a vertical conduction device in which P type anode regions are isolated using either LOCOS oxidation or deposited low temperature oxide. The first... | 03/06/2001 |
| 5940700 | Method for fabricating a semiconductor diode with BCD technology A diode integrated on semiconductor material with BCD technology and of the type provided on a substrate having a first type of conductivity inside an isolation region having a second type of conductivity. The diode comprises also a buried anode region ha... | 08/17/1999 |
| 5629558 | Semiconductor diode integrated with bipolar/CMOS/DMOS technology A diode integrated on semiconductor material with BCD technology and of the type provided on a substrate having a first type of conductivity inside an isolation region having a second type of conductivity. The diode comprises also a buried anode region ha... | 05/13/1997 |
| 5608244 | Semiconductor diode with reduced recovery current A high speed soft recovery diode having a large breakdown voltage is disclosed. Anode P layers (3) are selectively formed in a top portion of an N- body (2). A P- layer (4a) is disposed in the top portion of the N- body... | 03/04/1997 |
| 5389815 | Semiconductor diode with reduced recovery current A high speed soft recovery diode having a large breakdown voltage is disclosed. Anode P layers (3) are selectively formed in a top portion of an N- body (2). A P- layer (4a) is disposed in the top portion of the N- body (2... | 02/14/1995 |
| 5347161 | Stacked-layer structure polysilicon emitter contacted p-n junction diode A process is used to fabricate diodes having an emitter contacted p-n junction. A stack of n+ -type polysilicon layers are formed one upon the other upon a p-type silicon substrate. In an accordingly fabricated diode, native oxide layers that f... | 09/13/1994 |
