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| Number | Title | Issue Date |
| 7422924 | Image device and photodiode structure The invention provides a photodiode with an increased charge collection area, laterally spaced from an adjacent isolation region. Dopant ions of a first conductivity type with a first impurity concentration form a region surrounding at least part of the isolation re... | 09/09/2008 |
| 7391056 | Chemical sensor using chemically induced electron-hole production at a Schottky barrier Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential f... | 06/24/2008 |
| 7323402 | Trench Schottky barrier diode with differential oxide thickness A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination... | 01/29/2008 |
| 7282429 | Method of manufacturing Schottky diode device Embodiments of the invention provide a method of manufacturing a Schottky diode device. In one embodiment, the method includes: (a) providing a substrate; (b) sequentially forming a gate oxide layer and a polysilicon layer on the substrate; (c) partially oxidizing t... | 10/16/2007 |
| 7268005 | Apparatus and method for stacking laser bars for uniform facet coating An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a ... | 09/11/2007 |
| 7247550 | Silicon carbide-based device contact and contact fabrication method A silicon carbide-based device contact and contact fabrication method employ a layer of poly-silicon on a SiC substrate, with the contact's metal layer deposited on top of the poly-silicon. Both Schottky and ohmic contacts can be formed. The poly-silicon layer can b... | 07/24/2007 |
| 6682968 | Manufacturing method of Schottky barrier diode A Schottky barrier diode has a Schottky electrode formed on an operation region of a GaAs substrate and an ohmic electrode surrounding the Schottky electrode. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate... | 01/27/2004 |
| 6673679 | Semiconductor device with alternating conductivity type layer and method of manufacturing the same A semiconductor device has an alternating conductivity type layer that improves the tradeoff relation between the ON-resistance and the breakdown voltage and a method of manufacturing such a semiconductor device. The alternating conductivity type layer is... | 01/06/2004 |
| 6649458 | Method for manufacturing semiconductor device with hetero junction bipolar transistor The present invention achieves the enhancement of a manufacturing yield factor and the reduction of manufacturing cost in a manufacturing method of a semiconductor device having a hetero junction bipolar transistor (HBT), a Schottky diode and a resistance... | 11/18/2003 |
| 6627967 | Schottky barrier diode A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region for... | 09/30/2003 |
| 6590240 | Method of manufacturing unipolar components A method of manufacturing a unipolar component of vertical type in a substrate of a first conductivity type, including the steps of: forming trenches in a silicon layer of the first conductivity type; coating the lateral walls of the trenches with a silic... | 07/08/2003 |
| 6583485 | Schottky diode The invention relates to a semiconductor device, in particular a Schottky hybrid diode with a guard ring (S). The semiconductor device comprises a semiconductor substrate (1), an epitaxial layer (2) on which an insulating layer (3) with an opening (10) is... | 06/24/2003 |
| 6580141 | Trench schottky rectifier A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift... | 06/17/2003 |
| 6576973 | Schottky diode on a silicon carbide substrate A vertical Schottky diode including an N-type silicon carbide layer of low doping level formed by epitaxy on a silicon carbide substrate of high doping level. The periphery of the active area of the diode is coated with a P-type epitaxial silicon carbide ... | 06/10/2003 |
| 6558984 | Trench schottky barrier rectifier and method of making the same A trench Schottky barrier and a method of making the same in which the rectifier has a semiconductor region having first and second opposing faces; the semiconductor region having a drift region of a first conductivity type adjacent the first face and a c... | 05/06/2003 |
| 6551911 | Method for producing Schottky diodes and Schottky diodes A method for producing Schottky diodes having a protective ring in an edge region of a Schottky contact. The protective ring is produced by a protective ring material that is deposited onto a surface of a semiconductor layer, which surface is provided wit... | 04/22/2003 |
| 6524900 | Method concerning a junction barrier Schottky diode, such a diode and use thereof A method for controlling the temperature dependence of a junction barrier Schottky diode of a semiconductor material having an energy gap between the valence band and the conduction band exceeding 2 eV provides for doing this when producing the diode by a... | 02/25/2003 |
| 6524899 | Process for forming a large area, high gate current HEMT diode A method of manufacturing a HEMT IC using a citric acid etchant. In order that gates of different sizes may be formed with a single etching step, a citric acid etchant is used which includes potassium citrate, citric acid and hydrogen peroxide. The wafer ... | 02/25/2003 |
| 6525346 | Semiconductor device and its manufacturing method capable of reducing low frequency noise In a semiconductor device, a first semiconductor layer is formed on a semiconductor substrate. A second semiconductor layer is formed on a part of the first semiconductor layer, and a third semiconductor layer is formed on a part of the second semiconduct... | 02/25/2003 |
| 6495421 | Manufacture of semiconductor material and devices using that material A method is described of manufacturing a semiconductor material having a zone (200) with p-conductivity type and n-conductivity type regions with dopant concentrations and dimensions such that, when the n- and p-conductivity type regions are depleted of f... | 12/17/2002 |
| 6455403 | Shallow trench contact structure to solve the problem of schottky diode leakage A method for fabricating a Schottky diode using a shallow trench contact to reduce leakage current in the fabrication of an integrated circuit device is described. The method provides a simple and effective method for decreasing the possibility of forming... | 09/24/2002 |
| 6448162 | Method for producing schottky diodes A method for producing a Schottky diode formed of a doped guard ring in an edge area of the Schottky contact is described. The guard ring is produced by depositing a high barrier material, especially made of platinum, on the surface of the semiconductor l... | 09/10/2002 |
| 6426541 | Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication A Schottky diode comprises a semiconductor body of one conductivity type, the semiconductor body having a grooved surface, a metal layer on the grooved surface and forming a Schottky junction with sidewalls of the grooved surface and ohmic contacts with t... | 07/30/2002 |
| 6423598 | Semiconductor device, a method of manufacturing the same, and a semiconductor device protective circuit A Schottky diode which provides a structure having no P-N junction while improving voltage resistance against a reverse bias when employed in combination with an insulated gate semiconductor device in particular. In order to attain the aforementioned obje... | 07/23/2002 |
| 6420541 | Non-endogenous, constitutively activated human serotonin receptors and small molecule modulators thereof Disclosed herein are non-endogenous, constitutively activated forms of the human 5-HT2A and human 5-HT2C receptors and uses of such receptors to screen candidate compounds. Further disclosed herein are candidate compounds identified ... | 07/16/2002 |
| 6420768 | Trench schottky barrier rectifier and method of making the same A trench Schottky barrier rectifier and a method of making the same in which the rectifier has a semiconductor region having first and second opposing faces; the semiconductor region having a drift region of first conductivity type adjacent the first face... | 07/16/2002 |
| 6406965 | Method of fabricating HBT devices A method of fabricating an HBT transistor with extremely high speed and low operating current. The transistor has a small base area and a small emitter area with most of the emitter area contacted with metal, most of the base area, outside of the emitter,... | 06/18/2002 |
| 6404032 | Semiconductor device Trenches are formed in the surface of a second semiconductor layer of a first conductivity type. A semiconductor filled material of a second conductivity type is filled in the trench. A Schottky metal electrode is formed on the surface of the second semic... | 06/11/2002 |
| 6365462 | Methods of forming power semiconductor devices having tapered trench-based insulating regions therein Power semiconductor devices having tapered insulating regions include a drift region of first conductivity type therein and first and second trenches in the substrate. The first and second trenches have first and second opposing sidewalls, respectively, t... | 04/02/2002 |
| 6294445 | Single mask process for manufacture of fast recovery diode A single mask process for manufacture of a FRED employs a thick oxide layer over an N type silicon surface and a thin nitride layer over the oxide. A single mask defines FRED device spaced P diffusions. The oxide spanning the P diffusions is laterally etc... | 09/25/2001 |
| 6261932 | Method of fabricating Schottky diode and related structure A method of forming an improved Schottky diode structure as part of an integrated circuit fabrication process that includes the introduction of a selectable concentration of dopant into the surface of an epitaxial layer so as to form a barrier-modifying s... | 07/17/2001 |
| 6218222 | Method of manufacturing a semiconductor device with a schottky junction Devices with Schottky junctions are manufactured in that a semiconductor body with a substrate is provided with a first, for example n-type semiconductor region in the form of an epitaxial layer. A Schottky metal is locally provided thereon. A second semi... | 04/17/2001 |
| 6191447 | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same Power semiconductor devices having tapered insulating regions include a drift region of first conductivity type therein and first and second trenches in the substrate. The first and second trenches have first and second opposing sidewalls, respectively, t... | 02/20/2001 |
| 6191015 | Method for producing a Schottky diode assembly formed on a semiconductor substrate A Schottky diode assembly includes a Schottky contact formed on a semiconductor substrate and having a semiconductor region of a first conduction type, a metal layer disposed adjacently on the semiconductor region, a protective structure constructed on a ... | 02/20/2001 |
| 6140214 | Semiconductor processing methods, semiconductor processing methods of forming diodes, and semiconductor processing methods of forming schottky diodes Semiconductor processing methods, semiconductor processing methods of forming diodes, and semiconductor processing methods of forming Schottky diodes are described. In one embodiment, a first layer of material is formed over a substrate. A second layer of... | 10/31/2000 |
| 6087256 | Method for manufacturing modified T-shaped gate electrode In a method for manufacturing a semiconductor device, an insulating layer is formed on a semiconductor substrate, and a refractory metal is formed layer on the insulating layer. Then, a first opening is perforated in the refractory metal layer, and a part... | 07/11/2000 |
| 6060757 | High frequency RF diode with low parasitic capacitance An RF diode, and method for its manufacture, in which a well, doped n-conductive or p-conductive, is formed in a high-ohmic silicon substrate. A silicon epitaxial layer is provided over a first subregion of a surface of the well wherein the layer has the ... | 05/09/2000 |
| 5933715 | Process for manufacturing discrete electronic devices A process for manufacturing discrete electronic devices with active structures in an SOI (silicon-on-insulator) substrate which is thickened by an epitaxial layer and whose surface has a orientation, said process comprising the steps of: anisotropic... | 08/03/1999 |
| 5917228 | Trench-type schottky-barrier diode The present invention relates to a schottky-barrier diode capable of decreasing a leakage current due to damage generated on inner walls of trenches, and securing a large operation region for itself. In the device, an N- -type epitaxial layer i... | 06/29/1999 |
| 5907179 | Schottky diode assembly and production method A Schottky diode assembly includes a Schottky contact formed on a semiconductor substrate and having a semiconductor region of a first conduction type, a metal layer disposed adjacently on the semiconductor region, a protective structure constructed on a ... | 05/25/1999 |
