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| Number | Title | Issue Date |
| 7432123 | Methods of manufacturing high temperature thermistors A method of manufacturing high temperature thermistors. A polycrystalline thermistor body is formed from a material selected from a list consisting of bulk polycrystalline Si with intrinsic conductivity and bulk polycrystalline Ge with intrinsic conductivity. At lea... | 10/07/2008 |
| 7419868 | Gated diode nonvolatile memory process A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Various embodiments may include or exclude a diffusion barrier structure between the diode nodes. Example embodiments include the indiv... | 09/02/2008 |
| 7405457 | High temperature thermistors A high temperature NTC thermistor includes a polycrystalline thermistor body, selected from a list consisting of polycrystalline Si with intrinsic conductivity and polycrystalline Ge with intrinsic conductivity. At least one ohmic contact is disposed on at least one... | 07/29/2008 |
| 7368760 | Low parasitic capacitance Schottky diode A low parasitic capacitance Schottky diode including a lightly doped polycrystalline silicon island that is formed on a shallow trench isolation (STI) pad such that the polycrystalline silicon island is entirely isolated from an underlying silicon substrate by the S... | 05/06/2008 |
| 7348198 | Liquid crystal display device and fabricating method thereof A liquid crystal display device and a fabricating method thereof for simplifying a process and improving an aperture ratio are disclosed, including forming a first mask pattern group including a gate line, a gate electrode and a common line; forming a second mask pa... | 03/25/2008 |
| 7341932 | Schottky barrier diode and method thereof Pt/n−GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n−GaN Schottky barrier diodes have very large active areas, up to 1 cm2, w... | 03/11/2008 |
| 7329915 | Rectifying contact to an n-type oxide material or a substantially insulating oxide material A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 ... | 02/12/2008 |
| 7321133 | Heteroatomic regioregular poly(3-substitutedthiophenes) as thin film conductors in diodes which are not light emitting or photovoltaic Regio-regular polythiophenes used in diodes which are not light emitting or photovoltaic. High quality, processable thin film polymer films can be made. The thin film can have a thickness of about 50 nm to about one micron, and the conductive thin film can be applie... | 01/22/2008 |
| 7306967 | Method of forming high temperature thermistors A method of manufacturing high temperature thermistors from an ingot. The high temperature thermistors can be comprised of germanium or silicon. The high temperature thermistors have at least one ohmic contact. ... | 12/11/2007 |
| 7268038 | Method for fabricating a MIM capacitor having increased capacitance density and related structure According to one embodiment of the invention, a method for fabricating a MIM capacitor in a semiconductor die includes a step of depositing a first interconnect metal layer. The method further includes depositing a layer of silicon nitride on the first interconnect ... | 09/11/2007 |
| 7250666 | Schottky barrier diode and method of forming a Schottky barrier diode Disclosed is a silicon-on-insulator-based Schottky barrier diode with a low forward voltage that can be manufactured according to standard SOI process flow. An active silicon island is formed using an SOI wafer. One area of the island is heavily-doped with an n-type... | 07/31/2007 |
| 7176081 | Low temperature method for metal deposition A novel, low-temperature metal deposition method which is suitable for depositing a metal film on a substrate, such as in the fabrication of metal-insulator-metal (MIM) capacitors, is disclosed. The method includes depositing a metal film on a substrate using a depo... | 02/13/2007 |
| 5174857 | Slope etching process A slope etching process comprising the steps of coating a photoresist on a layer of hard material, baking the photoresist under a predetermined condition so that it flows down to have at its opposite side edges respective slant surface of a desired slope ... | 12/29/1992 |
