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| Number | Title | Issue Date |
| 7442616 | Method of manufacturing a bipolar transistor and bipolar transistor thereof A bipolar transistor (100) is manufactured using the following processes: (a) forming a base electrode layer (129) as a portion of a base electrode over a semiconductor substrate (110); (b) forming a first portion of an emitter electrode (154... | 10/28/2008 |
| 7410838 | Fabrication methods for memory cells A memory cell and a method of fabricating the same. A first conductive layer on a substrate is provided and a first type doped semiconductor layer is then formed on the first conductive layer. The first type doped semiconductor layer and the first conductive layer a... | 08/12/2008 |
| 7405167 | Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same A method of manufacturing a nonvolatile organic memory device including a memory layer interposed between an upper electrode layer and a lower electrode layer, which includes dispersing ions of conductive nanoparticles in an organic material disposed between the two... | 07/29/2008 |
| 7384802 | ESD protection device for high voltage An electrostatic discharge (ESD) protection structure and a method for forming the same are provided. The structure includes a substrate having a buried layer, and a first and a second high-voltage well region on the buried layer. The first and second high-voltage w... | 06/10/2008 |
| 7378326 | Printed circuit board with embedded capacitors therein and manufacturing process thereof A printed circuit board having embedded capacitors includes a double-sided copper-clad laminate including first circuit layers formed in the outer layers thereof, the first circuit layers including bottom electrodes and circuit patterns; dielectric layers formed by ... | 05/27/2008 |
| 7371650 | Method for producing a transistor structure A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and... | 05/13/2008 |
| 7365412 | Vertical parallel plate capacitor using spacer shaped electrodes and method for fabrication thereof A capacitor structure uses an aperture located within a dielectric layer in turn located over a substrate. A pair of conductor interconnection layers embedded within the dielectric layer terminates at a pair of opposite sidewalls of the aperture. A pair of capacitor... | 04/29/2008 |
| 7329915 | Rectifying contact to an n-type oxide material or a substantially insulating oxide material A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 ... | 02/12/2008 |
| 7316941 | Semiconductor device with a MOSFET formed in close proximity to a bipolar device and method of manufacture In one embodiment, a thyristor device may be formed in series relationship with a MOSFET. Alternating regions of opposite conductivity type may be formed in semiconductor material for defining source, body and drain regions for the MOSFET device, and in series relat... | 01/08/2008 |
| 7303973 | ALD process for capacitor dielectric Provided is a method for manufacturing a semiconductor device, including a dual-stage deposition step including: a first stage for introducing tantalum penta-ethoxide containing tantalum as a material gas into a reaction chamber in which a semiconductor substrate on... | 12/04/2007 |
| 7300852 | Method for manufacturing capacitor of semiconductor element A method for manufacturing a capacitor of a semiconductor element including: forming a bottom electrode of the capacitor on a semiconductor substrate; performing rapid thermal nitrification (RTN) on the upper surface of the bottom electrode; performing a thermal pro... | 11/27/2007 |
| 7294875 | Nanoscale programmable structures and methods of forming and using same A programmable structure and device and methods of forming and using the structure and device are disclosed. The structure includes a soluble electrode, an ion conductor, and an inert electrode. Upon application of a sufficient voltage, a conductive region forms wit... | 11/13/2007 |
| 7276778 | Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large... | 10/02/2007 |
| 7244646 | Pixel design to improve photodiode capacitance and method of forming same A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacen... | 07/17/2007 |
| 7157348 | Method for fabricating capacitor device After a capacitor device including a lower electrode, a capacitor dielectric film made from a ferroelectric film and an upper electrode is formed on a substrate, an insulating film covering the capacitor device is formed. Subsequently, the capacitor device covered w... | 01/02/2007 |
| 7091099 | Bipolar transistor and method for fabricating the same A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emit... | 08/15/2006 |
