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| Number | Title | Issue Date |
| 7442625 | Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under the substrate mounting portion, the heaters individually preheating a ... | 10/28/2008 |
| 7442644 | Method for manufacturing nitride semiconductor wafer or nitride semiconductor device; nitride semiconductor wafer or nitride semiconductor device made by the same; and laser irradiating apparatus used for the same To remove the disparate substrate from nitride semiconductor layer grown over the disparate substrate, that is made of a material different from nitride semiconductor, by irradiating the disparate substrate with laser beam having a wavelength shorter than the band g... | 10/28/2008 |
| 7442629 | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes p... | 10/28/2008 |
| 7439114 | Laser anneal method of a semiconductor layer For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at ... | 10/21/2008 |
| 7435675 | Method of providing a pre-patterned high-k dielectric film A method of forming a pre-patterned high-k dielectric film onto a support layer. The method includes: providing a support layer; providing a template defining template openings therein exhibiting a pattern that is a mirror image of a pattern of the pre-patterned hig... | 10/14/2008 |
| 7432137 | Method of manufacturing thin film transistor A method of manufacturing a thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode; forming a semiconductor layer on the gate insulating film; forming a bank including a first bank portion and a se... | 10/07/2008 |
| 7429543 | Method for the production of a substrate Method for producing a substrate includes establishing a plasma discharge with a locally inhomogeneous density distribution and exposing the substrate to the inhomogeneously density-distributed plasma discharge. The distribution is established by establishing a spec... | 09/30/2008 |
| 7419860 | Method of fabricating a semiconductor thin film A crystalline semiconductor having an even surface and a large crystal grain size is formed on an economical glass substrate using a laser crystallizing technology. A series of processes, including forming an insulation film on a glass substrate; forming a semicondu... | 09/02/2008 |
| 7419886 | Thermal treatment equipment and method for heat-treating The invention provides a method for activating impurity element added to a semiconductor and performing gettering process in shirt time, and a thermal treatment equipment enabling to perform such the heat-treating. The thermal treatment equipment comprises treatment... | 09/02/2008 |
| 7419885 | Method for cutting a wafer using a protection sheet The method for dicing a wafer including the steps of: reducing a thickness of a wafer to at least 0.1mm or less; forming a protection sheet tightly on one side of the wafer, the protection sheet having a Vickers hardness of 2 or more; and dicing the wafer by a grind... | 09/02/2008 |
| 7410878 | Polysilicon film having smooth surface and method of forming the same A method of forming a polysilicon film having smooth surface using a lateral growth and a step-and-repeat laser process. Amorphous silicon formed in a first irradiation region of a substrate is crystallized to form a first polysilicon region by a first laser shot. T... | 08/12/2008 |
| 7393764 | Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movem... | 07/01/2008 |
| 7371596 | Parallel-beam scanning for surface patterning of materials A system and method for parallel-beam scanning a surface. An energetic beam source emits an energetic collimated beam which is received by an optical device, comprising: one or more optical media, operable to receive the emitted beam, such as two pairs of coordinate... | 05/13/2008 |
| 7364985 | Method for creating electrical pathways for semiconductor device structures using laser machining processes A method for creating electrical pathways for semiconductor device structures using laser machining processes is provided. The method of the present invention includes providing a semiconductor substrate and forming one or more depressions in the semiconductor subst... | 04/29/2008 |
| 7365406 | Non-uniform ion implantation apparatus and method thereof A non-uniform ion implantation apparatus comprises a wide ion beam generator configured to generate a plurality of wide ion beams to irradiate at least two regions on the entire area of a wafer, and a wafer rotating device configured to rotate the wafer in a predete... | 04/29/2008 |
| 7358127 | Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof Impurity concentration (Nd(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of t... | 04/15/2008 |
| 7358157 | Method and system for high-speed precise laser trimming, scan lens system for use therein and electrical device produced thereby A method, system and scan lens system are provided for high-speed, laser-based, precise laser trimming at least one electrical element. The method includes generating a pulsed laser output having one or more laser pulses at a repetition rate. Each laser pulse has a ... | 04/15/2008 |
| 7348648 | Interconnect structure with a barrier-redundancy feature An interconnect structure that includes a barrier-redundancy feature which is capable of avoiding a sudden open circuit after an electromigration (EM) failure as well as a method of forming the same are provided. In accordance with the present invention, the barrier... | 03/25/2008 |
| 7312151 | System for ultraviolet atmospheric seed layer remediation The present invention provides a system for removing organic contaminants (216) from a copper seed layer that has been deposited on a semiconductor substrate (206). The present invention provides a housing (204) to enclose the semiconductor subs... | 12/25/2007 |
| 7294522 | CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed, in which a dead zone and a dark current are simultaneously reduced by selective epitaxial growth. The CMOS image sensor includes a first conductive type semiconductor substrate, a second conduc... | 11/13/2007 |
| 7294589 | Laser irradiation apparatus An object is to obtain an even energy distribution of a laser beam in one direction, thereby conducting a uniform laser annealing on a film. A laser irradiation apparatus comprising: a lens for dividing a laser beam in one direction; and an optical system for... | 11/13/2007 |
| 7279721 | Dual wavelength thermal flux laser anneal A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the... | 10/09/2007 |
| 7276457 | Selective heating using flash anneal A copper film is treated by applying light at short wavelengths, e.g., at less than 0.6 μm, to heat the copper film and generate a large temperature gradient from the surface of the copper to the interface between the copper and underlying silicon. As a result, gra... | 10/02/2007 |
| 7268026 | Method for manufacturing both a semiconductor crystalline film and semiconductor device A method of forming a crystal grain for use in a semiconductor manufacturing process, the method including the steps of forming an oxide silicon film on a glass substrate, etching at least one hole at a predetermined location in the oxide silicon film, forming an am... | 09/11/2007 |
| 7253125 | Method to improve mechanical strength of low-k dielectric film using modulated UV exposure Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechani... | 08/07/2007 |
| 7214573 | Method of manufacturing a semiconductor device that includes patterning sub-islands A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The su... | 05/08/2007 |
| 7176049 | Method of increasing a free carrier concentration in a semiconductor substrate A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free... | 02/13/2007 |
| 7172912 | Pattern forming method and wiring pattern forming method, and electro-optic device and electronic equipment To provide a pattern forming method enabling a thin film to be patterned with high precision by easy and low cost techniques. A thin film 2 is provided on a base material 1 containing a sublimable dyestuff, light is irradiated to the base material 1... | 02/06/2007 |
| 7145243 | Photo-thermal induced diffusion Formation of a mixed-material composition through diffusion using photo-thermal energy. The diffusion may be used to create electrically conductive traces. The diffusion may take place between material layers on one of a package substrate, semiconductor substrate, s... | 12/05/2006 |
| 7138303 | Method for manufacturing a thin film transistor having high mobility and high on-current In a thin film transistor (TFT) including an insulating substrate and a polycrystalline silicon island formed on the insulating layer, a grain size of the polycrystalline silicon island is elongated along one direction. A source region, a channel region and a drain ... | 11/21/2006 |
| 7138343 | Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber In order to produce substrate surfaces with a given two-dimensional surface distribution arising from a treatment using a vacuum treatment process, an inhomogeneous plasma (5) with a density distribution is generated and moved relative to the substrate (9 | 11/21/2006 |
| 7138306 | Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since... | 11/21/2006 |
| 7132366 | Method for fabricating semiconductor components using conductive layer and grooves A method for fabricating semiconductor components such as printed circuit boards, multi chip modules, chip scale packages, and test carriers is provided. The method includes providing a substrate having a blanket deposited conductive layer thereon. Using a laser mac... | 11/07/2006 |
| 6703281 | Differential laser thermal process with disposable spacers MOSFETs are fabricated with accurately defined, high and uniformly concentrated source/drain regions and extensions employing plural, sequential pre-amorphizing, implanting and laser thermal annealing steps with intervening spacer removal. Embodiments inc... | 03/09/2004 |
| 6689651 | Laser processing method In an annealing process of illuminating a semiconductor thin film with laser light, in the case where the laser illumination is performed at an energy level that is lower than an output energy range that allows a laser apparatus to operate most stably, th... | 02/10/2004 |
| 6683005 | Method of forming capacitor constructions The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material t... | 01/27/2004 |
| 6680250 | Formation of deep amorphous region to separate junction from end-of-range defects A method of manufacturing a MOSFET semiconductor device includes forming a gate electrode over a substrate and a gate oxide between the gate electrode and the substrate. Inert dopants are then implanted within the substrate to form amorphized source/drain... | 01/20/2004 |
| 6680460 | Apparatus for producing a semiconductor thin film In a semiconductor thin film producing apparatus for irradiating a semiconductor thin film by a laser beam through an aperture pattern formed in a mask to reform the semiconductor thin film, the mask has a reflecting surface having a reflectance not small... | 01/20/2004 |
| 6675057 | Integrated circuit annealing methods and apparatus Improved methods for performing thermal annealing of objects, such as wafers of integrated circuits (ICs), employ a scanning continuous wave laser beam. The annealing time is dependent upon the beam intensity, the beam spot size, the beam shape, and the b... | 01/06/2004 |
| 6656749 | In-situ monitoring during laser thermal annealing A method of manufacturing a semiconductor device includes thermal annealing source/drain regions with a laser, measuring a depth of the source/drain regions, and adjusting a parameter of the laser used in the thermal annealing process. After the laser is ... | 12/02/2003 |
