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| Number | Title | Issue Date |
| 7351627 | Method of manufacturing semiconductor device using gate-through ion implantation Disclosed herein is a method of manufacturing a semiconductor device via gate-through ion implantation, comprising forming a gate stack on a semiconductor substrate and performing ion implantation for control of the threshold voltage and junction ion implantation fo... | 04/01/2008 |
| 7223663 | MOS transistors and methods of manufacturing the same MOS transistors having a low junction capacitance between their halo regions and their source/drain extension regions and methods for manufacturing the same are disclosed. A disclosed MOS transistor includes: a semiconductor substrate of a first conductivity type; a... | 05/29/2007 |
| 7166503 | Method of manufacturing a TFT with laser irradiation In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and... | 01/23/2007 |
| 6495407 | Method of making an article comprising an oxide layer on a GaAs-based semiconductor body A novel method of forming a GaAs-based MOS structure comprises ion implantation after oxide formation, and subsequent slow heating and cooling, carried out such that essentially no interfacial defects that are detectable by high resolution transmission el... | 12/17/2002 |
| 5902130 | Thermal processing of oxide-compound semiconductor structures A method of thermal processing a supporting structure comprised of various compound semiconductor layers having a Gd free Ga2 O3 surface layer including coating the surface layer with a dielectric or a metallic cap layer or combinati... | 05/11/1999 |
| 5384269 | Methods for making and using a shallow semiconductor junction A method for making a shallow junction in a gallium arsenide substrate including implanting doping ions into an upper surface of the substrate and incorporating sulfur into the upper surface of the substrate after the ion implantation. A capping layer is ... | 01/24/1995 |
| 5314833 | Method of manufacturing GaAs metal semiconductor field effect transistor A method of manufacturing a GaAs field effect transistor comprises depositing a silicon thin film 202 on a semi-insulating semiconductor substrate 201, forming a first sensitive film 203 by a photolithography to define channel areas and ion-implanting n-t... | 05/24/1994 |
| 5296394 | Manufacturing method of GaAs metal semiconductor FET A manufacturing method of GaAs metal semiconductor FET is disclosed. The method comprises the steps of: preparing a GaAs substrate; depositing a silicon layer on the GaAs substrate; forming a first photoresist pattern on the silicon layer by means of well... | 03/22/1994 |
| 5204278 | Method of making MES field effect transistor using III-V compound semiconductor After a silicon nitride film is deposited on a compound semiconductor substrate, another insulating film such as a silicon dioxide film is provided thereon so as to define a channel region in the semiconductor substrate. Impurity ions such as Si ions are ... | 04/20/1993 |
| 4717685 | Method for producing a metal semiconductor field effect transistor A method for producing a metal semiconductor field effect transistor includes the steps of forming a buffer layer of Alx Ga.sub.(1-x) As in a predetermined region of the semiconductor substrate using a mask pattern by selective Al ion implantat... | 01/05/1988 |
| 4581076 | Selectively implanting GaAs semiconductor substrates through a metallic layer Ions are selectively implanted into layers of a semiconductor substrate of, for example, semi-insulating gallium arsenide via a photoresist implantation mask and a metallic layer of, for example, titanium, disposed between the substrate surface and the ph... | 04/08/1986 |
| 4519127 | Method of manufacturing a MESFET by controlling implanted peak surface dopants A method of manufacturing a metal semiconductor field-effect transistor (MESFET) by controlling implanted peak surface dopants, is provided which comprises the steps of selectively ion-implanting an impurity in the surface of a semi-insulating substrate m... | 05/28/1985 |
| 4505023 | Method of making a planar INP insulated gate field transistor by a virtual self-aligned process A planar compound semiconductor insulated gate field effect transistor and a virtual self-aligned process for making the same. The device includes a semi-insulating InP substrate in which doped source and drain regions separated by a channel region are lo... | 03/19/1985 |
| 4494997 | Ion implant mask and cap for gallium arsenide structures A mask and encapsulating layer suitable for use on gallium arsenide substrates is described incorporating a layer of germanium selenide which is photosensitive and may be exposed and developed to form a mask suitable for ion implantation and which may als... | 01/22/1985 |
| 4377030 | Metallization of selectively implanted AIII -BV compound semiconductors Fabricating a semiconductor arrangement with a semiconductor body of an AIII -BV compound, characterized that the semiconductor body is doped with different doping substances in such manner that for barrier and non-barrier contacts o... | 03/22/1983 |
| 4330343 | Refractory passivated ion-implanted GaAs ohmic contacts A method of attaining n+ regions with fine planar geometry in the soe and drain of GaAs devices utilizing ion implantation which improves ohmic contact with a refractory film. A layer of TiW refractory film is deposited on GaAs. 29 ... | 05/18/1982 |
| 4263605 | Ion-implanted, improved ohmic contacts for GaAs semiconductor devices A method of attaining n+ regions with fine planar geometry in the source and drain of GaAs devices utilizing ion implantation which improves Ohmic contact with a refractory film. A layer of TiW refractory film is deposited on GaAs. 29 | 04/21/1981 |
| 4173063 | Fabrication of a semiconductor component element having a Schottky contact and little series resistance utilizing special masking in combination with ion implantation The invention relates to a semiconductor component element, in particular a Schottky field-effect transistor with a low series resistance, as well as a process for the production thereof. By means of a novel masking technique, it is possible for the channel ... | 11/06/1979 |
