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| Number | Title | Issue Date |
| 7358147 | Process for producing SOI wafer There is provided a process for producing an SOI wafer in which, when producing an SOI wafer using Smart Cut technology, the surface can be smoothed after cleaving, the thickness of the SOI layer can be reduced, and the film thickness of the SOI wafer can be made un... | 04/15/2008 |
| 6967376 | Divot reduction in SIMOX layers A method of fabricating a silicon-on-insulator (SOI) having a superficial Si-containing layer that has a reduced number of tile and divot defects is provided. The method includes the steps of: implanting oxygen ions into a surface of a Si-containing substrate, the i... | 11/22/2005 |
| 6680243 | Shallow junction formation A method for forming shallow junctions in a substrate. The substrate is masked with a first mask to selectively cover first portions of the substrate and selectively expose second portions of the substrate. A first dopant is implanted substantially within... | 01/20/2004 |
| 6617034 | SOI substrate and method for production thereof A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on... | 09/09/2003 |
| 6548379 | SOI substrate and method for manufacturing the same A SOI substrate includes a SiO2 film (230) having a center located at the depth of the damage peak where the crystal damage is maximum after the Si substrate (10) is ion-implanted with oxygen ions. Even if a crystal defect (240) remains at the ... | 04/15/2003 |
| 6492246 | Method of forming a transistor in a semiconductor device There is disclosed a method of manufacturing a transistor in a semiconductor device. The present invention isolates a semiconductor substrate by an oxide layer with only a source, a drain and a channel region necessary for driving a transistor being left.... | 12/10/2002 |
| 6486037 | Control of buried oxide quality in low dose SIMOX A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing an oxygen ion implantation step to create a stable defect region; a low energy implantation step to create an amorphous layer adjacent to the stabl... | 11/26/2002 |
| 6475868 | Oxygen implantation for reduction of junction capacitance in MOS transistors Silicon-based, submicron-dimensioned MOS and/or CMOS transistor devices having substantially reduced source/drain junction-to-semiconductor substrate capacitance are formed by implanting oxygen atoms and/or molecules just below source/drain implant region... | 11/05/2002 |
| 6465844 | Power semiconductor device and method of manufacturing the same A power semiconductor device has a plurality of U-shaped buried layers buried in a drift layer and made of either an insulating material or a semiconductor having a wider bandgap than that of the semiconductor of the drift layer. The ratio of the product ... | 10/15/2002 |
| 6461933 | SPIMOX/SIMOX combination with ITOX option Beam implantation is combined with plasma implantation of oxygen, and possibly also internal thermal oxidation, to form a high quality buried oxide layer.... | 10/08/2002 |
| 6440805 | Method of forming a semiconductor device with isolation and well regions A semiconductor device and its method of fabrication are disclosed. The method includes forming a first well region in a semiconductor substrate. The semiconductor substrate includes a first doped region below the first well region. The first well region ... | 08/27/2002 |
| 6429466 | Integrated circuit substrate that accommodates lattice mismatch stress A method for growing a crystalline layer that includes a first material on a growth surface of a crystalline substrate of a second material, wherein the first material and the second material have different lattice constants. A buried layer is generated i... | 08/06/2002 |
| 6362082 | Methodology for control of short channel effects in MOS transistors A method of improving short channel effects in a transistor. First, a substance is implanted in a substrate. The substrate is then annealed such that the implanted substance forms at least one void in the substrate. Then, a transistor having a source, a d... | 03/26/2002 |
| 6362051 | Method of forming ONO flash memory devices using low energy nitrogen implantation A gate structure for an ONO flash memory device includes a first layer of silicon oxide on top of a semiconductor substrate, a second layer of silicon oxide, a layer of silicon nitride sandwiched between the two silicon oxide layers, and a control gate on... | 03/26/2002 |
| 6268256 | Method for reducing short channel effect A method for reducing the short channel effect of a metal-oxide-semiconductor device by forming a pocket region in a substrate is disclosed, in which the substrate has a channel region under the gate of the device, the channel region has an anti-punch-thr... | 07/31/2001 |
| 6259137 | Defect induced buried oxide (DIBOX) for throughput SOI A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing a first low energy implantation step to create a stable defect region; a second low energy implantation step to create an amorphous layer adjacent ... | 07/10/2001 |
| 6211095 | Method for relieving lattice mismatch stress in semiconductor devices A method for growing a crystalline layer that includes a first material on a growth surface of a crystalline substrate of a second material, wherein the first material and the second material have different lattice constants. A buried layer is generated i... | 04/03/2001 |
| 6204546 | Silicon-on-insulator substrates using low dose implantation An SOI substrate and method of forming is described incorporating the steps of implanting oxygen under two conditions and performing two high temperature anneals at temperatures above 1250° C. and above 1300° C., respectively, at two respective oxygen c... | 03/20/2001 |
| 6191049 | Method for forming oxide film in semiconductor device Method for forming an oxide film in a semiconductor device, is disclosed, which is suitable to form oxide films of different thicknesses in a device region, to which driving voltages of different levels are applied respectively, including the steps of pro... | 02/20/2001 |
| 6153909 | Semiconductor device and method for fabricating the same Semiconductor device and a method for fabricating the same, which is suitable for reducing a hot carrier effect, the device including a first conduction type substrate, a gate insulting film formed on a region of the first conduction type substrate, a gat... | 11/28/2000 |
| 6110802 | Process for producing a structure with a low dislocation density comprising an oxide layer buried in a semiconductor substrate Process for producing a structure having a low dislocation density comprising an oxide layer buried in a semiconductor substrate. This process for producing an epitaxied structure with a low dislocation density has the structure incorporating an oxide lay... | 08/29/2000 |
| 6110845 | Process for fabricating SOI substrate with high-efficiency recovery from damage due to Ion implantation First, oxygen ions of a high concentration are implanted into a silicon substrate 1, by which a high-concentration oxygen implanted layer 3 is formed. Subsequently, a heat treatment for about 4 hours at 1350° C. is carried out in an atmosphere of Ar with... | 08/29/2000 |
| 6083324 | Gettering technique for silicon-on-insulator wafers A gettering layer in a silicon-on-insulator wafer. The gettering layer may be formed by implanting gas-forming particles or precipitate-forming particles beneath the active region of the silicon layer and thermally treating the gas-forming ions to produce... | 07/04/2000 |
| 6043166 | Silicon-on-insulator substrates using low dose implantation An SOI substrate and method of forming is described incorporating the steps of implanting oxygen under two conditions and performing two high temperature anneals at temperatures above 1250° C. and above 1300° C., respectively, at two respective oxygen c... | 03/28/2000 |
| 5989981 | Method of manufacturing SOI substrate A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. T... | 11/23/1999 |
| 5970366 | Method of removing metallic contaminants from simox substrate In a method of forming a silicon substrate, a gettering film is formed on a bottom surface of a silicon substrate. An oxygen ion implantation into a top surface of the silicon substrate is carried out at a substrate temperature in the range of 400° C.-70... | 10/19/1999 |
| 5933761 | Dual damascene structure and its manufacturing method The present invention relates to a dual damascene structure and its manufacturing method. The invention uses two implanting step to form two stop layers. It uses the stop layers to perform an anisotropic etching step so as to form a via and trench. Finall... | 08/03/1999 |
| 5930643 | Defect induced buried oxide (DIBOX) for throughput SOI A method of fabricating a defect induced buried oxide (DIBOX) region in a semiconductor substrate utilizing a first low energy implantation step to create a stable defect region; a second low energy implantation step to create an amorphous layer adjacent ... | 07/27/1999 |
| 5930642 | Transistor with buried insulative layer beneath the channel region A transistor with a buried insulative layer beneath a channel region is disclosed. Unlike conventional SIMOX, the buried insulative layer has a top surface beneath the channel region that is closer than bottom surfaces of the source and drain to the top s... | 07/27/1999 |
| 5918151 | Method of manufacturing a semiconductor substrate and an apparatus for manufacturing the same A method for manufacturing an SOI semiconductor substrate and a manufacturing apparatus therefor in which a mean implantation depth and a dose of each of a series of oxygen ion implantations are continuously or stepwise changed, a depthwise distribution o... | 06/29/1999 |
| 5792679 | Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant A method for fabricating a GeSi/Si/SiO2 heterostructure comprises the steps of: (a) providing a monocrystalline Si substrate; (b) defining a GeSi region within the Si substrate while leaving a Si cap overlying the GeSi region, the Si cap being ... | 08/11/1998 |
| 5741717 | Method of manufacturing a SOI substrate having a monocrystalline silicon layer on insulating film Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon oxide particles are formed and remained in the residual silic... | 04/21/1998 |
| 5723896 | Integrated circuit structure with vertical isolation from single crystal substrate comprising isolation layer formed by implantation and annealing of noble gas atoms in substrate An integrated circuit structure vertically isolated electrically from the underlying substrate is formed in/on a single crystal semiconductor substrate, such as a silicon semiconductor wafer, by first implanting the substrate with a sufficient dosage of n... | 03/03/1998 |
| 5723372 | Method and apparatus for forming buried oxide layers within silicon wafers A method and apparatus for forming buried oxide layers within silicon wafers comprising several steps. Recesses are formed in a silicon wafer. Light ions are implanted in the silicon wafer at a depth that is smaller than the depth of the recesses to form ... | 03/03/1998 |
| 5707899 | SOI structure with a deep thin oxide layer prepared by ION implantation at high energy followed by thermal treatment A process for preparing an SOI structure with a deep thin oxide layer which comprises, in succession, a first ion implantation at an oxygen fluence within the range of 1015 -1016 ions/cm2, thermal treatment at a temperatur... | 01/13/1998 |
| 5674760 | Method of forming isolation regions in a MOS transistor device The present invention is directed to a MOS transistor and its method of fabrication. The transistor includes isolating layers below source/drain regions of the transistor. In this manner, lateral diffusion occurring in the source/drain regions can be reta... | 10/07/1997 |
| 5661043 | Forming a buried insulator layer using plasma source ion implantation A method and apparatus for forming a buried insulator layer, typically a silicon dioxide layer, includes using plasma source ion implantation to uniformly implant ions into exposed regions of a semiconductor wafer. A silicon-on-insulator (SOI) structure i... | 08/26/1997 |
| 5661044 | Processing method for forming dislocation-free SOI and other materials for semiconductor use A method for preparing a silicon-on-insulator material having a relatively defect-free Si overlayer involves the implanting of oxygen ions within a silicon body and the interruption of the oxygen-implanting step to implant Si ions within the silicon body.... | 08/26/1997 |
| 5658809 | SOI substrate and method of producing the same A method of producing an SOI substrate having a single-crystal silicon layer on a buried oxide layer in an electrically insulating state from the substrate by implanting oxygen ions into a single crystal silicon substrate and practicing an anneal processi... | 08/19/1997 |
| 5616507 | Method of manufacturing substrate having semiconductor on insulator A polysilicon layer is formed on a surface of a silicon substrate after oxygen ions are implanted into the silicon substrate and an SiO2 film is formed in the silicon substrate at a position in a prescribed depth from the surface of silicon sub... | 04/01/1997 |
