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| Number | Title | Issue Date |
| 6683356 | Semiconductor device with oxygen doped regions A semiconductor device includes sidewall insulating films formed on sides of the gate electrode layer respectively facing source and drain regions, and silicide layers formed on the source and drain regions. Oxygen-introduced portions are respectively for... | 01/27/2004 |
| 6475815 | Method of measuring temperature, method of taking samples for temperature measurement and method for fabricating semiconductor device An amorphous region is formed by implanting an impurity such as As into a semiconductor substrate having a natural oxide film. The amorphous region is divided into a heavily doped oxygen region in which the concentration of oxygen is equal to or higher th... | 11/05/2002 |
| 6337260 | Use of knocked-on oxygen atoms for reduction of transient enhanced diffusion Transient enhanced diffusion (TED) of ion implanted dopant impurities within a silicon semiconductor substrate is eliminated or substantially reduced by displacing "knocked-on" oxygen atoms from an overlying oxygen-containing layer into the substrate by i... | 01/08/2002 |
| 6255702 | Semiconductor device having junction depths for reducing short channel effect A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen at... | 07/03/2001 |
| 6153538 | Method of making MOSFET with ultra-thin gate oxide A semiconductor device comprising a miniaturized transistor with high-speed performance is formed with an ultra thin gate oxide layer. The ultra thin gate oxide layer is formed retarding its growth on a nitrogen-rich silicon substrate. Embodiments include... | 11/28/2000 |
| 6083780 | Semiconductor device and method of fabrication thereof A semiconductor device and a method of fabricating such a semiconductor device in which a silicon nitride film constituting a protective film for ion implantation is used for improving the device structure in order that conversion of a metal film into a s... | 07/04/2000 |
| 5960319 | Fabrication method for a semiconductor device A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen at... | 09/28/1999 |
| 5744817 | Hot carrier transistors and their manufacture A hot carrier transistor can be formed with semiconductor thin-film technology, for example hydrogenated amorphous silicon (a-Si:H) technology as used for large-area electronics devices. The emitter and collector regions (2 and 3) comprise hydrogenated am... | 04/28/1998 |
| 5672541 | Ultra-shallow junction semiconductor device fabrication A practical, low-cost and low hazard method and apparatus for the fabrication of ultra large scale integrated circuits is provided. Plasma source ion implantation (PSII) is employed for realizing required ultra-shallow doping junctions, while avoiding pre... | 09/30/1997 |
| 5648673 | Semiconductor device having metal silicide film on impurity diffused layer or conductive layer A semiconductor device and a method of fabricating such a semiconductor device in which a silicon nitride film constituting a protective film for ion implantation is used for improving the device structure in order that conversion of a metal film into a s... | 07/15/1997 |
| 5470794 | Method for forming a silicide using ion beam mixing An improved method is provided for fabricating a metal silicide upon a semiconductor substrate. The method utilizes ion beam mixing by implanting germanium to a specific elevation level within a metal layer overlying a silicon contact region. The implante... | 11/28/1995 |
| 4452644 | Process for doping semiconductors The present invention relates to a process for doping semiconductors, comprising the steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said... | 06/05/1984 |
| 4368083 | Process for doping semiconductors The present invention relates to a process for doping semiconductors, comprising the successive steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bomb... | 01/11/1983 |
| 4069068 | Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters ... | 01/17/1978 |
| 4045248 | Making Schottky barrier devices A semiconductor device comprising a semiconductor body portion having a shallow surface layer which is higher doped than the bulk of the semiconductor body portion, and a metal electrode on this layer and forming a Schottky barrier with the body portion. ... | 08/30/1977 |
