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| Number | Title | Issue Date |
| 7358127 | Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof Impurity concentration (Nd(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of t... | 04/15/2008 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier met... | 12/25/2007 |
| 7279721 | Dual wavelength thermal flux laser anneal A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the... | 10/09/2007 |
| 7250377 | Multi-layered structure forming method, method of manufacturing wiring substrate, and method of manufacturing electronic apparatus There is provided a multi-layered structure forming method comprising: (A) forming a first insulating material layer containing a first photo-curing material on a substrate; (B) semi-hardening the first insulating material layer by radiating light having a first wav... | 07/31/2007 |
| 7071042 | Method of fabricating silicon integrated circuit on glass A method of fabricating a silicon integrated circuit on a glass substrate includes preparing a glass substrate; fabricating a silicon layer on the glass substrate; implanting ions into the active areas of the silicon layer; covering the silicon layer with a heat pad... | 07/04/2006 |
| 6489225 | Method for controlling dopant profiles and dopant activation by electron beam processing An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor... | 12/03/2002 |
| 4895735 | Radiation induced pattern deposition A system and method for forming a pattern, such as a layer of metallization, on a surface. A layer comprising patterning material is positioned next to a deposition surface and a portion of the layer is heated to deposit some of the patterning material on... | 01/23/1990 |
| 4865923 | Selective intermixing of layered structures composed of thin solid films Synthetic layered structures, which may be semiconductor structures, are modified, both laterally and vertically, to provide novel electronic, optoelectronic, and optical properties. This is accomplished by selective intermixing of such layered structures... | 09/12/1989 |
| 4855014 | Method for manufacturing semiconductor devices Disclosed is a method of manufacturing semiconductor devices, in which a monocrystalline thin film is formed by dissolving and recrystallizing either amorphous or polycrystalline thin film by annealing with energy beams, comprising the steps of: forming a... | 08/08/1989 |
| 4842679 | Method for the production of semiconductor devices A method for the production of semiconductor devices comprising introducing source gases, etching gases or source molecules into a substrate to grow crystalline layers on said substrate or to etch said substrate, resulting in a semiconductor device, where... | 06/27/1989 |
| 4835118 | Non-destructive energy beam activated conductive links A process of manufacturing selectively restructurable conductive links between circuit elements and corresponding spare elements on a semiconductor. A continuous green light laser directed at a non-conductive amorphous region in the links causes the regio... | 05/30/1989 |
| 4816126 | Method for forming a planarized thin film Charged particles are irradiated over a thin film formed on a convex and concave surface of a substrate or over a thin film being formed on a convex and concave surface of a substrate. During the irradiation, raise in temperature of the thin film and impi... | 03/28/1989 |
| 4771010 | Energy beam induced layer disordering (EBILD) A novel energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/o... | 09/13/1988 |
| 4746803 | Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same In an apparatus for forming a single crystal semiconductor layer from a non-single-crystalline semiconductor material by scanning a region of the material with an electron beam, a first pair of deflection electrodes and a second pair of deflection electro... | 05/24/1988 |
| 4731338 | Method for selective intermixing of layered structures composed of thin solid films A multilayer structure formed of two or more separate layers of different materials can be selectively intermixed so as to become compositionally transmuted, such that the distinction between the different original materials is lost, at least partially. T... | 03/15/1988 |
| 4670292 | Method for injecting exotic atoms into a solid with electron beams A method for injecting exotic atoms into a solid with electron beams comprises irradiating a material having structure of two layers to which at least one thin film adheres with electron beams, and injecting the exotic atoms into an irradiation region. Th... | 06/02/1987 |
| 4670291 | Method of controlling supersaturated injection and concentration of exotic atoms into deep portions of a solid with a high energy electron beam A method of controlling supersaturated injection of exotic atoms comprises previously preparing a parent material buried by exotic phases consisting Ge or Si, irradiating the parent material with the electron beams, and forming supersaturated injection re... | 06/02/1987 |
| 4668527 | Method for amorphizing a material by means of injection of exotic atoms into a solid with electron beams A method for amorphizing a material comprises attaching a thin film consisting of exotic atoms to a parent material, irradiating the two layer material under given conditions of irradiation from the side of the thin film with electron beams, and injecting... | 05/26/1987 |
| 4662949 | Method of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beam In an apparatus for forming a single crystal semiconductor layer from a non-single-crystalline semiconductor material by scanning a region of the material with an electron beam, a first pair of deflection electrodes and a second pair of deflection electro... | 05/05/1987 |
| 4655850 | Method of forming monocrystalline thin films by parallel beam scanning of belt shaped refractory metal film on amorphous or polycrystalline layer A new method of manufacturing semiconductor devices, in which monocrystalline thin film is formed by melting and recrystallizing either amorphous or polycrystalline thin film via annealing by radiation of energy beams, wherein the manufacturing method com... | 04/07/1987 |
| 4626315 | Process of forming ultrafine pattern A process for forming an ultrafine pattern on a surface of a substrate, which includes steps of irradiating the substrate surface with radiation modulated according to information to be patterned, subjecting the substrate surface to deposition with a mate... | 12/02/1986 |
| 4615765 | Self-registered, thermal processing technique using a pulsed heat source Thermal processing of selected areas of a workpiece, such as a semiconductor device, is implemented without a photolithographic masking step. This is achieved through the use of a pulse-mode source of heat energy, such as a laser or a particle beam source... | 10/07/1986 |
| 4610731 | Shallow impurity neutralization A process is described for fabricating semiconductor devices in which atomic hydrogen is used to neutralize shallow donors in III-V semiconductor compounds so as to make certain areas exhibit high resistance. Also described is reverse neutralization in wh... | 09/09/1986 |
| 4605566 | Method for forming thin films by absorption A film of an element is deposited on a semiconductor substrate by passing on the substrate gas containing the element and then irradiating a predetermined portion of the substrate with an electron beam. Then, the gas is decomposed to deposit the element o... | 08/12/1986 |
| 4592799 | Method of recrystallizing a polycrystalline, amorphous or small grain material For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the ... | 06/03/1986 |
| 4585512 | Method for making seed crystals for single-crystal semiconductor devices Seed crystals are made in a region of a polycrystalline layer on a substrate using a beam of electrons. The beam is used to melt the region, which is then solidified from one end to the other in a first direction and outwardly toward the edges in a second... | 04/29/1986 |
| 4575466 | Treatment process for semiconductor wafer A process for preparing a semiconductor wafer having one region including impurities at a concentration of more than 5×1016 cm-3 therein, in which an energy beam is radiated onto this one region of the semiconductor wafer in order t... | 03/11/1986 |
| 4566937 | Electron beam enhanced surface modification for making highly resolved structures A method for forming high resolution submicron structures on a substrate is provided by direct writing with a submicron electron beam in a partial pressure of a selected gas phase characterized by the ability to dissociate under the beam into a stable gas... | 01/28/1986 |
| 4564403 | Single-crystal semiconductor devices and method for making them A large, single-crystal semiconductor device is made from a substrate having a layer of polycrystalline or amorphous material thereon by exposing a region of the layer to a beam of electrons to melt the region and then solidifying the molten region from o... | 01/14/1986 |
| 4549913 | Wafer construction for making single-crystal semiconductor device Seed crystals are made in a region of a polycrystalline layer on a substrate by melting the region and then cooling it so that it solidifies from one end to the other in a first direction and outwardly toward the edges in a second direction normal to the ... | 10/29/1985 |
| 4521256 | Method of making integrated devices having long and short minority carrier lifetimes A process for producing a semiconductor device by which the minority carrier lifetime can be selectively changed in a semiconductor device. A radiation beam is irradiated onto the surface of a semiconductor substrate to shorten the minority carrier lifeti... | 06/04/1985 |
| 4514895 | Method of forming field-effect transistors using selectively beam-crystallized polysilicon channel regions A method of manufacturing MOS field-effect transistors using a wafer (40) having a polycrystal or amorphous semiconductor layer formed on an insulator comprises a step in which an energy beam (44) is applied to the semiconductor layer by scanning the beam... | 05/07/1985 |
| 4502205 | Method of manufacturing an MIS type semiconductor device A method of forming an impurity region for an MIS type semiconductor device includes the step of activating an implanted impurity with an energy beam anneal, said implantation comprising multiple impurity ion implantation steps with varied implantation en... | 03/05/1985 |
| 4498951 | Method of manufacturing single-crystal film The whole surface of a polycrystalline or amorphous semiconductor film deposited so as to continuously cover the surface of a single-crystal substrate and an insulating film is irradiated with a laser beam or electron beam, thereby to selectively melt onl... | 02/12/1985 |
| 4496449 | Electron beam etching of integrated circuit structures A new apparatus for altering the microtopography of certain solid materials commonly used in the integrated circuit industry by electron beam induced etching is described. This is accomplished with one or more glow discharge electron beam guns operating i... | 01/29/1985 |
| 4469527 | Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing A semiconductor substrate is formed by irradiating a semiconductor substrate with radioactive ray so as to generate lattice defects therein for making the entire substrate semi-insulating and then rendering only the surface of the thus irradiated substrat... | 09/04/1984 |
| 4468855 | Method of making aluminum gate self-aligned FET by selective beam annealing through reflective and antireflective coatings A method for producing a semiconductor device comprising the steps of forming a gate insulating layer (3) on a semiconductor substrate having a first conductivity (1) and forming an aluminum gate electrode (4) on the gate insulating layer (3); impurity do... | 09/04/1984 |
| 4465529 | Method of producing semiconductor device A method for producing an impurity containing semiconductor substrate includes depositing an impurity on selected portions of the substrate by placing a charge on the substrate and converting a gaseous impurity containing atmosphere into a plasma. The imp... | 08/14/1984 |
| 4455495 | Programmable semiconductor integrated circuitry including a programming semiconductor element A programmable semiconductor integrated circuitry including a circuit programming element is disclosed. The circuit programming element can be activated in a short-circuit mode by the irradiation of a laser or electron beam or by ion implantation so that ... | 06/19/1984 |
| 4448632 | Method of fabricating semiconductor devices A method of manufacturing a semiconductor device utilizing a monocrystalline silicon layer includes forming and irradiating a polycrystalline silicon layer to increase the grain size thereof, and forming an epitaxial layer thereover. Both layers are then ... | 05/15/1984 |
