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A self defense weapon formed as a memo pad and which is easily held by a person's fingers, therefore making it possible to provide protection from a mugger and also to quickly and easily write a record or a message without failure of missing or forgetting significant information under a stressful situation.
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| Number | Title | Issue Date |
| 7410878 | Polysilicon film having smooth surface and method of forming the same A method of forming a polysilicon film having smooth surface using a lateral growth and a step-and-repeat laser process. Amorphous silicon formed in a first irradiation region of a substrate is crystallized to form a first polysilicon region by a first laser shot. T... | 08/12/2008 |
| 7410907 | Fabricating integrated devices using embedded masks A method of fabricating a device using a multi-layered wafer that has an embedded etch mask adapted to map a desired device structure onto an adjacent (poly)silicon layer. Due to the presence of the embedded mask, it becomes possible to delay the etching that forms ... | 08/12/2008 |
| 6469368 | Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method In a method for producing a high-speed power diode with soft recovery, in which method the carrier life within the associated semiconductor substrate (10) is governed by first, unmasked bombardment (14) with an axial profile and by subsequent, second, mas... | 10/22/2002 |
| 6465871 | Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device A semiconductor layer, through which a main current flows, is so structured that a carrier life time in the semiconductor layer is ununiform in accordance with a predetermined distribution of the carrier life time. Thus, turn OFF characteristics of a semi... | 10/15/2002 |
| 6355493 | Method for forming IC's comprising a highly-resistive or semi-insulating semiconductor substrate having a thin, low resistance active semiconductor layer thereon A method for forming ICs comprising a highly-resistive or semi-insulating semiconductor substrate having a thin, low resistance active semiconductor layer thereon. In accordance with one embodiment of the method, the entire semiconductor substrate with at... | 03/12/2002 |
| 6326274 | Method for improving performance and reliability of MOS technologies and data retention characteristics of flash memory cells A method of fabricating a semiconductor device wherein there is provided a semiconductor substrate, preferably of silicon, having a gate insulator thereover, preferably of silicon dioxide, forming a junction, preferably a silicon/silicon dioxide interface... | 12/04/2001 |
| 6252259 | Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device A semiconductor layer, through which a main current flows, is so structured that a carrier life time in the semiconductor layer is uniform in accordance with a predetermined distribution of the carrier life time. Thus, turn OFF characteristics of a semico... | 06/26/2001 |
| 6100575 | Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device A semiconductor layer, through which a main current flows, is so structured that a carrier life time in the semiconductor layer is ununiform in accordance with a predetrmined distribution of the carrier life time. Thus, turn OFF characteristics of a semic... | 08/08/2000 |
| 6046109 | Creation of local semi-insulating regions on semiconductor substrates The present invention solves the problem of how to form local regions of semi-insulating material within a single crystal substrate. It does this by irradiating the semiconductor with a high energy beam capable of producing radiation damage along its path... | 04/04/2000 |
| 5750443 | Method of manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device wherein a corpuscular beam is radiated to a semiconductor substrate to create crystal defects therein. The semiconductor substrate is subjected to a heat treatment, e.g. for 1 second to 60 minu... | 05/12/1998 |
| 5747872 | Fast power diode A fast power diode with a soft switching-time response for use in a commutating branch containing a switchable semiconductor component is formed by at least three successive diffusions with p and n dopants and the heavy metal platinum, and for final incor... | 05/05/1998 |
| 5510274 | Method of controlling a carrier lifetime in a semiconductor switching device A semiconductor layer, through which a main current flows, is so structured that a carrier life time in the semiconductor layer is ununiform in accordance with a predetermined distribution of the carrier life time. Thus, turn OFF characteristics of a semi... | 04/23/1996 |
| 5420045 | Process for manufacturing thyristor with adjustable breakover voltage Thyristor with an npnp layer sequence, in which a zone (14) enriched with generation and recombination centers and formed by proton irradiation is provided underneath the triggering contact (7) in the n-type base (3), which enriched zone defines, by means... | 05/30/1995 |
| 5352330 | Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption The process of using electron beam induced stimulated desorption chemistry to produce structures of nanometer order size on surfaces. By passivating a reconstructed surface and selectively removing such passivation with an electron beam through the electr... | 10/04/1994 |
| 5284780 | Method for increasing the electric strength of a multi-layer semiconductor component For increasing the electric strength of a semiconductor component that comprises a sequence of semiconductor layers of alternating conductivity type and which is adapted to be charged with a voltage that biases at least one of the p-n junctions that separ... | 02/08/1994 |
| 5248633 | Methods for forming epitaxial self-aligned calcium silicide contacts and structures The present invention is a method of forming conductive structures comprising the steps of providing a silicon substrate having a first surface of atomically clean (111) silicon, forming an epitaxial CaF2 insulating layer on the first surface, ... | 09/28/1993 |
| 5243205 | Semiconductor device with overvoltage protective function In a photothyristor, a main thyristor consisting of a P emitter layer, an N base layer, a P gate base layer and an N emitter layer is formed on a semiconductor substrate. Also a pilot thyristor surrounded with the main thyristor and consisting of a P emit... | 09/07/1993 |
| 5219773 | Method of making reoxidized nitrided oxide MOSFETs A method of fabricating a field-effect device having a gate dielectric of reoxidized nitrided oxide (RNO) provides an inversion layer mobility much higher than that of conventional RNO devices. A conductivity structure such as a metal oxide semiconductor ... | 06/15/1993 |
| 5151766 | Semiconductor component In order to improve overall the trade-off between forward voltage drop and turn-off time, in a doped zone an axially limited region is provided with recombination centers. The recombination centers form a trap density profile varying periodically in one o... | 09/29/1992 |
| 5144402 | Semiconductor switching device and method of controlling a carrier life time in a semiconductor switching device A semiconductor layer, through which a main current flows, is so structured that a carrier life time in the semiconductor layer is ununiform in accordance with a predetermined distribution of the carrier life time. Thus, turn OFF characteristics of a semi... | 09/01/1992 |
| 5017508 | Method of annealing fully-fabricated, radiation damaged semiconductor devices A method and apparatus for annealing devices having radiation induced damage is disclosed. A device is exposed to electron irradiation to induce damage to the active area. The device is then annealed with a rapid thermal anneal at a low temperature. The r... | 05/21/1991 |
| 4987087 | Process for manufacturing a thyristor with proton irradiation A process for making a thyristor device protected against breakover firing is to generate in the semiconductor body (1) of the thyristor an area (A) which has a lower breakdown voltage than the rest of the semiconductor body. This area is protected by sui... | 01/22/1991 |
| 4806497 | Method for producing large-area power semiconductor components A method for producing large-area power semiconductor components, wherein at least two irradiation processes (neutron irridiation, ion implantation electron, γor proton irradiation) are used to produce the basic doping, to introduce deep pn junctions and... | 02/21/1989 |
| 4792530 | Process for balancing forward and reverse characteristic of thyristors A thyristor having a beveled edge extending from its top surface is irradiated by an electron beam which is applied only to the beveled surface and is also electron beam irradiated from its bottom surface through an expansion plate fixed to the bottom sur... | 12/20/1988 |
| 4762802 | Method for preventing latchup in CMOS devices The present invention relates to a CMOS structure, and method for forming the same, which prevents latchup in MOS devices. The method is directed to the CMOS structure and functions to reduce the lateral resistance of the n-tub, where the presence of a la... | 08/09/1988 |
| 4684413 | Method for increasing the switching speed of a semiconductor device by neutron irradiation A method for decreasing the turnoff time in a crystalline semiconductor region within a semiconductor device comprises initially providing a semiconductor region having a predetermined density of pinning centers. The semiconductor region is then irradiate... | 08/04/1987 |
| 4626315 | Process of forming ultrafine pattern A process for forming an ultrafine pattern on a surface of a substrate, which includes steps of irradiating the substrate surface with radiation modulated according to information to be patterned, subjecting the substrate surface to deposition with a mate... | 12/02/1986 |
| 4620211 | Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices Reduction in the forward current gain of an inherent bipolar transistor in an insulated-gate semiconductor device such as an IGT or an IGFET is achieved by implantation of selected ions into the semiconductor material of such device. The ions, which creat... | 10/28/1986 |
| 4585489 | Method of controlling lifetime of minority carriers by electron beam irradiation through semi-insulating layer A semiconductor device and a method of manufacturing the same are disclosed wherein a semi-insulating film having a high trap density is formed on a semiconductor substrate so as to prevent charges from remaining in the semi-insulating film and to prevent... | 04/29/1986 |
| 4530734 | Low energy ion etching A substrate is irradiated in a pattern with a neutron beam at energy levels well below those which produce either atomic reactions or physical disruption of the substrate structure. When etched with a suitable etchant, the irradiated portions are preferen... | 07/23/1985 |
| 4526624 | Enhanced adhesion of films to semiconductors or metals by high energy bombardment Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process resul... | 07/02/1985 |
| 4521256 | Method of making integrated devices having long and short minority carrier lifetimes A process for producing a semiconductor device by which the minority carrier lifetime can be selectively changed in a semiconductor device. A radiation beam is irradiated onto the surface of a semiconductor substrate to shorten the minority carrier lifeti... | 06/04/1985 |
| 4497884 | Method for the production of a self-supporting mask The invention relates to a method for the production of a self-supporting spacing mask for a particle radiation-projection system, especially for the selective structuring and/or doping when producing highly integrated circuits. According to the invention... | 02/05/1985 |
| 4469527 | Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing A semiconductor substrate is formed by irradiating a semiconductor substrate with radioactive ray so as to generate lattice defects therein for making the entire substrate semi-insulating and then rendering only the surface of the thus irradiated substrat... | 09/04/1984 |
| 4457972 | Enhanced adhesion by high energy bombardment Films (12) of gold, copper, silicon nitride, or other materials are firmly bonded to insulator substrates (12) such as silica, a ferrite, or Teflon (polytetrafluorethylene) by irradiating the interface with high energy ions. Apparently, track forming proc... | 07/03/1984 |
| 4328610 | Method of reducing alpha-particle induced errors in an integrated circuit Alpha-particle induced errors in integrated circuits, especially those used for memory storage, are reduced by subjecting the partially completed, or fully completed, integrated circuits to neutron irradiation. This irradiation creates "traps" in the sing... | 05/11/1982 |
| 4318750 | Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects A method for eliminating the latch-up effect in integrated circuits having parasitic pnpn structures has been described comprising the step of irradiating the circuit with high energy particulate ions to provide low lifetime regions in the circuit to lowe... | 03/09/1982 |
| 4311534 | Reducing the reverse recovery charge of thyristors by nuclear irradiation A method of reducing the reverse recovery charge of thyristors without substantially increasing forward voltage drop by first determining the depth of the anode PN junction from a major surface adjoining a cathode emitter region. The depth of maximum defe... | 01/19/1982 |
| 4292729 | Electron-beam programmable semiconductor device structure A semiconductor device structure is provided in which an electrically isolated or "floating" conductor is adapted to receive electric charge from an electron beam. The resultant stored charge provides the basis for useful electronic functions such as floa... | 10/06/1981 |
| 4292644 | Control of valley current in a unijunction transistor by electron irradiation An improved unijunction transistor having increased valley current is characterized by a region of locally lower lifetime proximate the emitter-base junction. The lifetime is reduced either by overall irradiation of the device or, more preferably, by sele... | 09/29/1981 |
