Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 7442625 | Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under the substrate mounting portion, the heaters individually preheating a ... | 10/28/2008 |
| 7294590 | System and method for removing charges with enhanced efficiency Method and apparatus for removing and neutralizing charges. The method includes loading a structure into a chamber. The structure includes a first surface and a plurality of charges away from the first surface. Additionally, the method includes supplying a first ion... | 11/13/2007 |
| 7294526 | Nano optical sensors via molecular self-assembly An optical sensor is provided, comprising (a) a silicon nanowire of finite length having an electrical contact pad at each end thereof; and (b) a plurality of self-assembled molecules on a surface of the silicon nanowire, the molecules serving to modulate electrical... | 11/13/2007 |
| 7241708 | Laser irradiation method that includes moving a center of rotation along a straight line in order to enhance the crystallinity of the semiconductor film Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for movin... | 07/10/2007 |
| 7224008 | Self-aligned production method for an insulated gate semiconductor device cell and insulated gate semiconductor device cell The invention relates to a manufacturing method for an insulated gate semiconductor device cell, comprising the steps of forming a cell window (3) in a layered structure that is located on top of a semiconductor substrate (1), forming at least one proc... | 05/29/2007 |
| 7223670 | DUV laser annealing and stabilization of SiCOH films A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive d... | 05/29/2007 |
| 7084068 | Annealing furnace, manufacturing apparatus, annealing method and manufacturing method of electronic device An annealing furnace, includes a processing chamber configured to store a substrate; a susceptor located in the processing chamber so as to load the substrate and having an auxiliary heater for heating the substrate at 650° C. or less, the susceptor having a surfac... | 08/01/2006 |
| 4784723 | Method for producing a single-crystalline layer A method of producing a semiconductor device includes the steps of preparing a base body, forming a non-single-crystalline semiconductor layer on the base body, and irradiating the non-single-crystalline semiconductor layer with an energy beam having a st... | 11/15/1988 |
| 4731855 | Pattern defect inspection apparatus A pattern defect inspection apparatus detects presence or absence of a defect in a pattern formed on a semiconductor wafer by scanning the pattern normally to the surface thereof by a coherent light beam of a predetermined spot size, detecting reflected d... | 03/15/1988 |
| 4580157 | Semiconductor device having a soft-error preventing structure In a semiconductor device, particularly a memory device, radioactive rays emitted from the ceramic material of the package enclosing the LSI chip of the device detrimentally influence the electrical properties of the device. In the memory device, the info... | 04/01/1986 |
| 4554568 | Temperature-compensated Zener diode An irradiation-stable, temperature-compensated Zener diode and a process for producing the Zener diode. The diode includes a first pn junction having metallic impurities diffused into the corresponding type n region, a second pn junction with a type n reg... | 11/19/1985 |
| 4541003 | Semiconductor device including an alpha-particle shield The present invention relates to a semiconductor device having a semiconductor element which is sealed by a ceramic package, wherein a shielding member is provided near it from upper surface of the semiconductor element to shield the alpha-particles radia... | 09/10/1985 |
| 4295265 | Method for producing a nonvolatile semiconductor memory In a nonvolatile semiconductor memory which comprises a source region and a drain region formed on one surface of a semiconductor substrate having one conductivity type, a first insulating film formed on a channel region which is located between the sourc... | 10/20/1981 |
| 4288911 | Method for qualifying biased integrated circuits on a wafer level Integrated circuits in dice on a wafer are qualified by providing two sets of conductors connected to each die by fusible elements, biasing the dice using said conductors during exposure to a qualifying environment, testing the fusible elements, removing ... | 09/15/1981 |
| 4277882 | Method of producing a metal-semiconductor field-effect transistor A metal-semiconductor field-effect transistor is formed by providing a blanket layer of the same conductivity type as the semiconductor body, with field oxide subsequently being grown, and with a region of opposite conductivity type being formed to extend... | 07/14/1981 |
| 4234355 | Method for manufacturing a semiconductor element utilizing thermal neutron irradiation and annealing In a known process for manufacturing a semiconductor element, a single crystal semiconductor body is subjected to at least one high temperature treatment such as diffusion or epitaxy in order to create a pn junction. A metallization is then applied to the... | 11/18/1980 |
| 4224083 | Dynamic isolation of conductivity modulation states in integrated circuits Conductivity modulation states in a first component of a power integrated circuit are dynamically isolated from a second component of the integrated circuit having at least one common active region with the first component by selective irradiation of port... | 09/23/1980 |
| 4210464 | Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconduct... | 07/01/1980 |
| 4193003 | Method for controlling the migration of a chemical species within a solid substrate The method for controlling the migration of an electronegative chemical species within a solid substrate which exhibits ionic conduction consists in irradiating the substrate with electrons which have sufficient energy to penetrate into the substrate and ... | 03/11/1980 |
| 4184896 | Surface barrier tailoring of semiconductor devices utilizing scanning electron microscope produced ionizing radiation A method of spatially tailoring the surface barrier of MOS devices by means of a scanning electron microscope using ionizing radiation at the silicon dioxide-silicon interface to control the surface charge distribution. The MOS is subsequently annealed at... | 01/22/1980 |
| 4170500 | Process for forming field dielectric regions in semiconductor structures without encroaching on device regions A process for forming the field dielectric regions in semiconductor structures without encroaching upon device areas includes the steps of forming an insulating layer on a surface of a semiconductor substrate, forming regions of selected material on the s... | 10/09/1979 |
| 3938178 | Process for treatment of semiconductor In the embodiment is specifically described a method for irradiating a transistor device with radiant rays. The top surface of the semiconductor crystal contained in the transistor device is exposed to the radiant rays so that the radiated energy impingin... | 02/10/1976 |
