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| Number | Title | Issue Date |
| 7439092 | Thin film splitting method A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding with itself and/or with impurities includes the following steps: | 10/21/2008 |
| 7410877 | Method for manufacturing SIMOX wafer and SIMOX wafer A method for manufacturing a SIMOX wafer includes: heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer to form a... | 08/12/2008 |
| 7408225 | Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-... | 08/05/2008 |
| 7405482 | High-k dielectric film, method of forming the same and related semiconductor device A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first ... | 07/29/2008 |
| 7378744 | Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed ove... | 05/27/2008 |
| 7344933 | Method of forming device having a raised extension region A method is disclosed of forming an extension region for a transistor having a gate structure overlying a compound semiconductor layer. An anneal is used either before or after deep source/drain implantation to diffuse a dopant from a raised region adjacent the gate... | 03/18/2008 |
| 7312151 | System for ultraviolet atmospheric seed layer remediation The present invention provides a system for removing organic contaminants (216) from a copper seed layer that has been deposited on a semiconductor substrate (206). The present invention provides a housing (204) to enclose the semiconductor subs... | 12/25/2007 |
| 7256111 | Pretreatment for electroless deposition Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heati... | 08/14/2007 |
| 7241670 | Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen A method of forming a relaxed SiGe layer having a high germanium content in a semiconductor device includes preparing a silicon substrate; depositing a strained SiGe layer; implanting ions into the strained SiGe layer, wherein the ions include silicon ions and ions ... | 07/10/2007 |
| 7217659 | Process for producing materials for electronic device A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconducting layer. The process includes a step of CVD-treating a substrate to be processed having single-crystal silicon as a main comp... | 05/15/2007 |
| 7215006 | Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provi... | 05/08/2007 |
| 7199043 | Method of forming copper wiring in semiconductor device Disclosed in a method of forming a copper wiring in a semiconductor device. A copper layer buries a damascene pattern in which an interlayer insulating film of a low dielectric constant. The copper layer is polished by means of a chemical mechanical polishing proces... | 04/03/2007 |
| 7115481 | Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate A method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate. The method includes providing an initial structure that includes a useful layer having a front face on a support substrate. At... | 10/03/2006 |
| 6451672 | Method for manufacturing electronic devices in semiconductor substrates provided with gettering sites This invention relates to a method for manufacturing electronic devices integrated monolithically in a semiconductor substrate delimited by two opposed front and back surfaces of a semiconductor material wafer. The method comprises at least a step of impl... | 09/17/2002 |
| 6246068 | Semiconductor article with porous structure A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a p... | 06/12/2001 |
| 6168981 | Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices A method and apparatus for the localized reduction of the lifetime of charge carriers in integrated electronic devices. The method comprises the step of implanting ions, at a high dosage and at a high energy level, of a noble gas, preferably helium, in th... | 01/02/2001 |
| 6083324 | Gettering technique for silicon-on-insulator wafers A gettering layer in a silicon-on-insulator wafer. The gettering layer may be formed by implanting gas-forming particles or precipitate-forming particles beneath the active region of the silicon layer and thermally treating the gas-forming ions to produce... | 07/04/2000 |
| 5900652 | Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices A method and apparatus for the localized reduction of the lifetime of charge carriers in integrated electronic devices. The method comprises the step of implanting ions, at a high dosage and at a high energy level, of a noble gas, preferably helium, in th... | 05/04/1999 |
| 5854123 | Method for producing semiconductor substrate A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a p... | 12/29/1998 |
| 5840590 | Impurity gettering in silicon using cavities formed by helium implantation and annealing Impurity gettering in silicon wafers is achieved by a new process consisting of helium ion implantation followed by annealing. This treatment creates cavities whose internal surfaces are highly chemically reactive due to the presence of numerous silicon d... | 11/24/1998 |
| 5759904 | Suppression of transient enhanced diffusion in ion implanted silicon The present invention provides a method for suppressing transient enhanced diffusion of ion implanted dopants in a semiconductor substrate comprising bombarding the substrate in a vacuum with a beam of bubble-forming ions at a first temperature, a first e... | 06/02/1998 |
| 5633174 | Type silicon material with enhanced surface mobility A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer benea... | 05/27/1997 |
| 5198371 | Method of making silicon material with enhanced surface mobility by hydrogen ion implantation A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer benea... | 03/30/1993 |
