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| Number | Title | Issue Date |
| 7397063 | Semiconductor device A semiconductor device comprises a glass substrate serving as a substrate having an insulated surface and a silicon layer located on a position overlapping with this glass substrate. The silicon layer includes an amorphous gettering region. Preferably, the silicon l... | 07/08/2008 |
| 7397110 | High resistance silicon wafer and its manufacturing method A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is i... | 07/08/2008 |
| 7364987 | Method for manufacturing semiconductor device In a method of forming a semiconductor device, a copper diffusion-prevention layer is formed underneath a substrate. Impurity regions are formed on the surface of the substrate. A copper wiring is electrically connected to the impurity regions. The copper diffusion-... | 04/29/2008 |
| 7332385 | Method of manufacturing a semiconductor device that includes gettering regions A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline ... | 02/19/2008 |
| 7326597 | Gettering using voids formed by surface transformation One aspect of this disclosure relates to a method for creating a gettering site in a semiconductor wafer. In various embodiments, a predetermined arrangement of a plurality of holes is formed in the semiconductor wafer through a surface of the wafer. The wafer is an... | 02/05/2008 |
| 7323398 | Method of layer transfer comprising sequential implantations of atomic species A method of manufacturing a crystalline wafer that includes implanting first atomic species in a donor substrate to form a region of weakness at a first depth therein and configured to facilitate detachment of a first layer of the donor substrate from a remaining po... | 01/29/2008 |
| 7316947 | Method of manufacturing a semiconductor device An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of ... | 01/08/2008 |
| 7195990 | Process for producing a photoelectric conversion device that includes using a gettering process A catalyst element remaining in a first semiconductor film subjected to a first heat treatment (crystallization) is moved and concentrated/collected by subjecting a second semiconductor film which is formed on the first semiconductor film and contains a rare gas ele... | 03/27/2007 |
| 7193294 | Semiconductor substrate comprising a support substrate which comprises a gettering site A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond e... | 03/20/2007 |
| 7135386 | Process for fabricating a semiconductor device By removing halogen atoms existing on the surface of the silicon layer and in the subsurface thereof so that the concentration of halogen atoms becomes 100 ppm or lower and forming an electrode on the resulting silicon layer, the electrode which has a low resistance... | 11/14/2006 |
| 7126194 | Method for removing impurities of a semiconductor wafer, semiconductor wafer assembly, and semiconductor device On a silicon layer of an SOI wafer is defined a semiconductor device-forming region to form semiconductor devices thereon and an insulating region to electrically insulate the semiconductor device-forming region. Then, a mask layer is formed of nitride by means of p... | 10/24/2006 |
| 6833195 | Low temperature germanium transfer A method of bonding a germanium (Ge) wafer to a semiconductor wafer. A Ge wafer having a cleaving plane defined by ion implantation is provided. A surface activation on at least one surface of the Ge wafer is performed. A semiconductor wafer is provided. A surface a... | 12/21/2004 |
| 6670225 | Method of manufacturing a semiconductor device After a catalyst element is introduced into an amorphous silicon film, the amorphous silicon film is converted into a crystalline silicon film by a heat treatment and laser irradiation. After a resist mask is formed on the crystalline silicon film, boron ... | 12/30/2003 |
| 6670640 | Method for producing semiconductor device In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silicide layer is formed by heating process. Further, after a region as cr... | 12/30/2003 |
| 6649427 | Method for evaluating impurity concentrations in epitaxial susceptors A method for non-destructively evaluating the concentration of impurities in an epitaxial susceptor used in the processing of a semiconductor substrate. The method includes processing a semiconductor substrate of known impurity levels on the epitaxial sus... | 11/18/2003 |
| 6635950 | Semiconductor device having buried boron and carbon regions, and method of manufacture thereof To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an ... | 10/21/2003 |
| 6632688 | Method for evaluating impurity concentrations in epitaxial reagent gases A method for evaluating the concentration of impurities in gases used in depositing an epitaxial layer on a semiconductor substrate. The method includes processing a semiconductor substrate of known impurity levels in an epitaxial reactor, and measuring t... | 10/14/2003 |
| 6630363 | Method for evaluating impurity concentrations in unpolished wafers grown by the Czochralski method A method for evaluating the concentration of impurities in as-grown monocrystalline semiconductor ingots is provided. The method includes growing a monocrystalline semiconductor ingot, and measuring the bulk impurity levels of the ingot by drawing togethe... | 10/07/2003 |
| 6624049 | Semiconductor device and method of manufacturing the same Catalytic elements such as Ni are intentionally combined with defects that remain inside of a semiconductor substrate or thin film so that the energy state of the defects comes to a stable state. In this state, a heat treatment is conducted in an atmosphe... | 09/23/2003 |
| 6620632 | Method for evaluating impurity concentrations in semiconductor substrates A method for evaluating the concentration of impurities in a semiconductor substrate. The method includes drawing together at least a portion of the impurities and measuring the concentration of impurities that were drawn together. In one embodiment of th... | 09/16/2003 |
| 6569749 | Silicon and oxygen ion co-implanation for metallic gettering in epitaxial wafers A novel method of generating intrinsic gettering sites in epitaxial wafers employs co-implanting silicon and oxygen into a substrate of the wafer, annealing the substrate at a low temperature, and then depositing the epitaxial layer on a surface of the su... | 05/27/2003 |
| 6551866 | Method of manufacturing a semiconductor memory device A method of manufacturing a semiconductor memory device comprising: a step of forming a storage node in which a conductive layer 7 to be the storage node is formed in the vicinity of single crystalline silicon 3 formed on an insulator 2, a gettering step ... | 04/22/2003 |
| 6541315 | Semiconductor device and fabrication method thereof Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel ... | 04/01/2003 |
| 6541117 | Silicon epitaxial wafer and a method for producing it There is disclosed a silicon epitaxial wafer comprising an epitaxial layer formed on a silicon wafer wherein Erratic phenomenon does not occur in a MOS device fabricated on the silicon epitaxial wafer, a silicon epitaxial wafer having oxide dielectric bre... | 04/01/2003 |
| 6528358 | Semiconductor device and method for fabricating the same A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon f... | 03/04/2003 |
| 6504174 | Semiconductor device and method for fabricating the same A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon f... | 01/07/2003 |
| 6455401 | METHODOLOGY FOR PRODUCING THIN FILM SEMICONDUCTOR DEVICES BY CRYSTALLIZING AN AMORPHOUS FILM WITH CRYSTALLIZATION PROMOTING MATERIAL, PATTERNING THE CRYSTALLIZED FILM, AND THEN INCREASING THE CRYSTALLINITY WITH AN IRRADIATION After an amorphous silicon film is crystallized by annealing and then patterned into islands, the silicon islands are heated by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes cr... | 09/24/2002 |
| 6448118 | Semiconductor film manufacturing with selective introduction of crystallization promoting material A TFT having stable characteristics is obtained by using a crystal silicon film obtained by crystallizing an amorphous silicon film by using nickel. Phosphorus ions are implanted to regions 111 and 112 by using a mask 109. Then, a heat treatment is perfor... | 09/10/2002 |
| 6448157 | Fabrication process for a semiconductor device A surface of a substrate is oxidized at a temperature equal to or higher than 1050° C., or at a oxidation speed equal to or higher than 7.5 nm/min to form an oxide film with a thickness equal to or more than 1500 nm. when the oxide film is removed, a den... | 09/10/2002 |
| 6444547 | Method for manufacturing semiconductor device The present invention is characterized by providing epitaxial growth of a semiconductor layer on the surface of a wafer not provided with mirror finishing and having irregularity, introducing impurities having different conductivity type in the epitaxiall... | 09/03/2002 |
| 6436745 | Method of producing a semiconductor device In a method of producing a semiconductor device, an a-Si film is crystallized using nickel to form a CGS film. Then, an a-Si film containing phosphorus is directly formed on the whole surface of the CGS film, and then the CGS film and the a-Si film are su... | 08/20/2002 |
| 6403450 | Heat treatment method for semiconductor substrates The invention concerns a method for treating, a substrate comprising a semi-conducting layer (4) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a step for forming, an oxide layer (6) at the semi-conducting la... | 06/11/2002 |
| 6391738 | Semiconductor processing method and trench isolation method The invention includes semiconductor processing methods, including trench isolation. In one implementation, an oxide layer is deposited over a substrate. The deposited oxide layer is exposed to a chlorine containing gas effective to getter metals outwardl... | 05/21/2002 |
| 6391746 | Gettering regions and methods of forming gettering regions within a semiconductor wafer In one aspect, the invention pertains to a method of forming a gettering region within an Si semiconductor wafer, the method including: a) providing a semiconductor material wafer; b) providing a background region within the semiconductor material wafer, ... | 05/21/2002 |
| 6380007 | Semiconductor device and manufacturing method of the same A Ni film is formed in contact with a semiconductor film from an amorphous silicon film, a microcrystalline silicon film, etc. The semiconductor film is heated at between 450 and 650° C., moving the Ni, and forming a crystalline semiconductor film. Next,... | 04/30/2002 |
| 6376335 | Semiconductor wafer manufacturing process A semiconductor wafer manufacturing process is disclosed wherein extremely flat, double side polished semiconductor wafers having enhanced gettering characteristics on the back surface are produced. The process includes creating an enhanced gettering laye... | 04/23/2002 |
| 6372611 | Semiconductor manufacturing method including gettering of metal impurities In a method of manufacturing a semiconductor device, a first polysilicon film is formed on a surface of a semiconductor substrate for a semiconductor element to be formed thereon. Ion implantation is performed in such a manner that impurity ions are impla... | 04/16/2002 |
| 6346460 | Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture A low cost method of manufacturing a silicon substrate having both impurity gettering and protection against CMOS latch up. The method includes performing a low energy implant of a selected acceptor ion to form a low resistivity buried layer closely adjac... | 02/12/2002 |
| 6342436 | Method of manufacturing semiconductor substrate and method of manufacturing solid-state image-pickup device There is a provided a method of manufacturing a semiconductor substrate in which generation of bright points after epitaxial growth is reduced, and there is provided a method of manufacturing a solid-state image-pickup device in which illuminated defects ... | 01/29/2002 |
| 6339011 | Method of forming semiconductive active area having a proximity gettering region therein and method of processing a monocrystalline silicon substrate to have a proximity gettering region In one implementation, A method of forming semiconductive material active area having a proximity gettering region received therein includes providing a substrate comprising bulk semiconductive material. A proximity gettering region is formed within the b... | 01/15/2002 |
